PROCEEDINGS VOLUME 5376
MICROLITHOGRAPHY 2004 | 22-27 FEBRUARY 2004
Advances in Resist Technology and Processing XXI
MICROLITHOGRAPHY 2004
22-27 February 2004
Santa Clara, California, United States
Fundamental Resist Issues (Invited Papers)
Proc. SPIE 5376, Photoresist outgassing: a potential Achilles heel for short-wavelength optical lithography?, 0000 (14 May 2004); doi: 10.1117/12.533535
Proc. SPIE 5376, Is ArF the final wavelength?, 0000 (14 May 2004); doi: 10.1117/12.537609
Resist Material Issues in Immersion Lithography
Proc. SPIE 5376, Implications of immersion lithography on 193-nm photoresists, 0000 (14 May 2004); doi: 10.1117/12.535875
Proc. SPIE 5376, Resist interaction in 193-/157-nm immersion lithography, 0000 (14 May 2004); doi: 10.1117/12.534759
Proc. SPIE 5376, Measurements of water distribution in thin lithographic films, 0000 (14 May 2004); doi: 10.1117/12.535881
Proc. SPIE 5376, Quencher gradient resist process for low k process, 0000 (14 May 2004); doi: 10.1117/12.534786
193-nm Materials
Proc. SPIE 5376, 193-nm negative resist based on acid-catalyzed elimination of polar molecules, 0000 (14 May 2004); doi: 10.1117/12.536432
Proc. SPIE 5376, Why do weak acids not work in 193-nm photoresists?: matrix effects on acid-catalyzed deprotection, 0000 (14 May 2004); doi: 10.1117/12.537186
Proc. SPIE 5376, IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance, 0000 (14 May 2004); doi: 10.1117/12.536874
Proc. SPIE 5376, Novel nonionic photoacid generator releasing strong acid for chemically amplified resists, 0000 (14 May 2004); doi: 10.1117/12.531803
Proc. SPIE 5376, High-performance 193nm photoresist materials based on ROMA polymers: sub-90nm contact hole application with resist reflow, 0000 (14 May 2004); doi: 10.1117/12.535117
157-nm Materials
Proc. SPIE 5376, A new monocyclic fluropolymer structure for 157-nm photoresists, 0000 (14 May 2004); doi: 10.1117/12.533932
Proc. SPIE 5376, Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography, 0000 (14 May 2004); doi: 10.1117/12.535098
Proc. SPIE 5376, The dissolution behavior of tetrafluoroethylene-based fluoropolymers for 157-nm resist materials, 0000 (14 May 2004); doi: 10.1117/12.533901
Proc. SPIE 5376, Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement, 0000 (14 May 2004); doi: 10.1117/12.534742
Proc. SPIE 5376, 157-nm single-layer resist based on novel monocyclic fluorinated polymer, 0000 (14 May 2004); doi: 10.1117/12.535013
157-nm and 193-nm Processing I
Proc. SPIE 5376, Strategy for sub-80nm contact hole patterning considering device fabrication, 0000 (14 May 2004); doi: 10.1117/12.534811
Proc. SPIE 5376, Dependence of ArF resist on exposed area ratio, 0000 (14 May 2004); doi: 10.1117/12.535142
Proc. SPIE 5376, Overbake: sub-40nm gate patterning with ArF lithography and binary masks, 0000 (14 May 2004); doi: 10.1117/12.532695
Proc. SPIE 5376, Evaluation of outgassing from a fluorinated resist for 157-nm lithography, 0000 (14 May 2004); doi: 10.1117/12.535110
Proc. SPIE 5376, Optimization of resist shrink techniques for contact hole and metal trench ArF lithography at the 90-nm technology node, 0000 (14 May 2004); doi: 10.1117/12.534610
Proc. SPIE 5376, 157-nm resist assessment by a full-field scanner, 0000 (14 May 2004); doi: 10.1117/12.535092
157-nm and 193-nm Processing II
Proc. SPIE 5376, Comprehensive analysis of sources of total CD variation in ArF resist perspective, 0000 (14 May 2004); doi: 10.1117/12.534806
Proc. SPIE 5376, Novel reactions of quadricyclane: a new route to monomers for low-absorbing polymers in 157-nm photoresists, 0000 (14 May 2004); doi: 10.1117/12.535613
Proc. SPIE 5376, Effects of airborne molecular contamination on 157nm resists: AMC friend or foe?, 0000 (14 May 2004); doi: 10.1117/12.537652
Proc. SPIE 5376, Elimination of photoresist linewidth slimming by fluorination, 0000 (14 May 2004); doi: 10.1117/12.533331
Resist Fundamentals I
Proc. SPIE 5376, Surface and bulk chemistry of chemically amplified photoresists: segregation in thin films and environmental stability issues, 0000 (14 May 2004); doi: 10.1117/12.535703
Proc. SPIE 5376, Investigation of shot-noise-induced line-edge roughness by continuous-model-based simulation, 0000 (14 May 2004); doi: 10.1117/12.535516
Proc. SPIE 5376, The lithographic impact of resist model parameters, 0000 (14 May 2004); doi: 10.1117/12.537581
Proc. SPIE 5376, Resolution limitations in chemically amplified photoresist systems, 0000 (14 May 2004); doi: 10.1117/12.536656
Poster Sessions
Proc. SPIE 5376, Simulation technique for the PR flow process using a new viscous flow model, 0000 (14 May 2004); doi: 10.1117/12.534809
Resist Fundamentals II
Proc. SPIE 5376, Reactive dissolution kinetics of lithographic copolymers, 0000 (14 May 2004); doi: 10.1117/12.535599
Proc. SPIE 5376, Design of dissolution inhibitors for chemically amplified photolithographic systems, 0000 (14 May 2004); doi: 10.1117/12.535941
Proc. SPIE 5376, Effect of nanoscale confinement on the diffusion behavior of photoresist polymer thin films, 0000 (14 May 2004); doi: 10.1117/12.535333
Proc. SPIE 5376, Proximity correction and k1 performance for resists with nonoptical patterning response, 0000 (14 May 2004); doi: 10.1117/12.537701
Proc. SPIE 5376, A study on the dissolution inhibition of poly norbornene hexafluoroisopropanol in aqueous base solutions, 0000 (14 May 2004); doi: 10.1117/12.537077
Proc. SPIE 5376, Improved chemically amplified photoresist characterization using interdigitated electrode sensors: photoacid diffusivity measurements, 0000 (14 May 2004); doi: 10.1117/12.536218
LER
Proc. SPIE 5376, Effect of background exposure dose upon line-edge roughness (LER), 0000 (14 May 2004); doi: 10.1117/12.535623
Proc. SPIE 5376, Characterization of line-edge roughness in photoresist using an image fading technique, 0000 (14 May 2004); doi: 10.1117/12.537103
Proc. SPIE 5376, Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100 nm device performance, 0000 (14 May 2004); doi: 10.1117/12.534926
Proc. SPIE 5376, Patterning capabilities of EUV resists, 0000 (14 May 2004); doi: 10.1117/12.536021
Proc. SPIE 5376, Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists, 0000 (14 May 2004); doi: 10.1117/12.535862
ARC/Pattern Collapse/Defectivity
Proc. SPIE 5376, Application of photosensitive BARC and KrF resist on implant layers, 0000 (14 May 2004); doi: 10.1117/12.534735
Proc. SPIE 5376, Evaluation of wet-developable KrF organic BARC to improve CD uniformity for implant application, 0000 (14 May 2004); doi: 10.1117/12.538061
Proc. SPIE 5376, Rinse additives for defect suppression in 193-nm and 248-nm lithogrophy, 0000 (14 May 2004); doi: 10.1117/12.537764
Proc. SPIE 5376, Rapid supercritical drying techniques for advanced lithography, 0000 (14 May 2004); doi: 10.1117/12.533981
Joint Session: Emerging/Advanced Processing and Novel Applications
Proc. SPIE 5376, Enhancing the electron beam sensitivity of hydrogen silsesquioxane (HSQ), 0000 (14 May 2004); doi: 10.1117/12.536245
Proc. SPIE 5376, BIORESIST: a lithographic approach for the patterning of cells in tissue engineering applications, 0000 (14 May 2004); doi: 10.1117/12.533367
Proc. SPIE 5376, Novel resists with non-traditional compositions for EUV lithography, 0000 (14 May 2004); doi: 10.1117/12.534319
Proc. SPIE 5376, Photopatternable silicone compositions for electronic packaging applications, 0000 (14 May 2004); doi: 10.1117/12.533804
Poster Sessions
Proc. SPIE 5376, Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model), 0000 (14 May 2004); doi: 10.1117/12.533907
Proc. SPIE 5376, Contact shrinkage techniques for 157-nm lithography, 0000 (14 May 2004); doi: 10.1117/12.534596
Proc. SPIE 5376, Evaluation of 157-nm resist structure: outgassing relationship using in situ QCM technique, 0000 (14 May 2004); doi: 10.1117/12.533649