High-NA and Polarization
Proc. SPIE 5377, Optical lithography in the sub-50-nm regime, 0000 (28 May 2004); doi: 10.1117/12.535432
Proc. SPIE 5377, Lithography of choice for the 45 nm node: new medium, new wavelength, or new beam, 0000 (28 May 2004); doi: 10.1117/12.535104
Proc. SPIE 5377, Immersion lithography and its impact on semiconductor manufacturing, 0000 (28 May 2004); doi: 10.1117/12.534507
Proc. SPIE 5377, Benefiting from polarization effects on high-NA imaging, 0000 (28 May 2004); doi: 10.1117/12.537266
Proc. SPIE 5377, Improvement of deteriorated resolution caused by polarization phenomenon with TARC process, 0000 (28 May 2004); doi: 10.1117/12.534504
157-nm Lithography
Proc. SPIE 5377, Optical path and image performance monitoring of a full-field 157-nm scanner, 0000 (28 May 2004); doi: 10.1117/12.537328
Proc. SPIE 5377, Assessing the impact of intrinsic birefringence on 157-nm lithography, 0000 (28 May 2004); doi: 10.1117/12.544242
Proc. SPIE 5377, 157-nm lithography with extremely high numerical aperture lens for 45-nm technology node, 0000 (28 May 2004); doi: 10.1117/12.535119
Proc. SPIE 5377, Initial assessment of the lithographic impact of the use of hard pellicles: an overview, 0000 (28 May 2004); doi: 10.1117/12.537530
Proc. SPIE 5377, Production of novel materials for 157-nm and 193-nm soft pellicles, 0000 (28 May 2004); doi: 10.1117/12.534350
Proc. SPIE 5377, Photo-induced changes in 157-nm optical coatings, 0000 (28 May 2004); doi: 10.1117/12.534190
Image Quality and Characterization
Proc. SPIE 5377, Impact of resist blur on MEF, OPC, and CD control, 0000 (28 May 2004); doi: 10.1117/12.537472
Proc. SPIE 5377, Determination of resist parameters using the extended Nijboer-Zernike theory, 0000 (28 May 2004); doi: 10.1117/12.531840
Proc. SPIE 5377, New paradigm in lens metrology for lithographic scanner: evaluation and exploration, 0000 (28 May 2004); doi: 10.1117/12.536550
Proc. SPIE 5377, Correction of 157-nm lens based on phase ring aberration extraction method, 0000 (28 May 2004); doi: 10.1117/12.544256
Proc. SPIE 5377, Initial experimental verification: characterizing tool illumination and PSM performance with phase shifting masks, 0000 (28 May 2004); doi: 10.1117/12.535612
Proc. SPIE 5377, In-situ aberration monitoring using phase wheel targets, 0000 (28 May 2004); doi: 10.1117/12.537379
Resolution Enhancement Technology for low k1 I
Proc. SPIE 5377, Study of OPC for AAPSM reticles using various mask fabrication techniques, 0000 (28 May 2004); doi: 10.1117/12.536138
Proc. SPIE 5377, Hard phase-shifting masks for the 65-nm node: a performance comparison, 0000 (28 May 2004); doi: 10.1117/12.534091
Proc. SPIE 5377, Contact hole reticle optimization by using interference mapping lithography (IML), 0000 (28 May 2004); doi: 10.1117/12.536581
Proc. SPIE 5377, Method to improve the resolution of contact holes, 0000 (28 May 2004); doi: 10.1117/12.535246
Proc. SPIE 5377, Contact hole formation by multiple exposure technique in ultralow k1 lithography, 0000 (28 May 2004); doi: 10.1117/12.535114
Immersion Lithography
Proc. SPIE 5377, Feasibility of immersion lithography, 0000 (28 May 2004); doi: 10.1117/12.536852
Proc. SPIE 5377, Approaching the numerical aperture of water immersion lithography at 193-nm, 0000 (28 May 2004); doi: 10.1117/12.537262
Proc. SPIE 5377, Extending optical lithography with immersion, 0000 (28 May 2004); doi: 10.1117/12.534009
Proc. SPIE 5377, Deep-UV immersion interferometric lithography, 0000 (28 May 2004); doi: 10.1117/12.536772
Proc. SPIE 5377, ArF immersion lithography: critical optical issues, 0000 (28 May 2004); doi: 10.1117/12.534024
Proc. SPIE 5377, Polarization effects in immersion lithography, 0000 (28 May 2004); doi: 10.1117/12.534322
Resolution Enhancement Technology for low k1 II
Proc. SPIE 5377, Predictive modeling of advanced illumination pupils used as imaging enhancement for low k1 applications, 0000 (28 May 2004); doi: 10.1117/12.537199
Proc. SPIE 5377, Optical extensions towards the 45-nm node, 0000 (28 May 2004); doi: 10.1117/12.537522
Proc. SPIE 5377, Illumination source mapping and optimization with resist based process metrics for low k1 imaging, 0000 (28 May 2004); doi: 10.1117/12.536006
Proc. SPIE 5377, Gray assist bar OPC, 0000 (28 May 2004); doi: 10.1117/12.544244
Modeling and Simulation for Immersion
Proc. SPIE 5377, Image simulation in immersion lithography using Debye integral and scattering matrix method, 0000 (28 May 2004); doi: 10.1117/12.534836
Proc. SPIE 5377, Optical coupling of lens, liquid and resist in immersion lithography: rigorous model and assessment, 0000 (28 May 2004); doi: 10.1117/12.537443
Proc. SPIE 5377, Simulation of the coupled thermal optical effects for liquid immersion micro-/nano-lithography, 0000 (28 May 2004); doi: 10.1117/12.537574
Proc. SPIE 5377, Exploring the capabilities of immersion lithography through simulation, 0000 (28 May 2004); doi: 10.1117/12.537704
Flare, Scatter, and Stray Light
Proc. SPIE 5377, Model-based OPC/DRC considering local flare effects, 0000 (28 May 2004); doi: 10.1117/12.535076
Proc. SPIE 5377, Investigation of stray light characteristic by multiple Gaussian modeling and its OPC application, 0000 (28 May 2004); doi: 10.1117/12.533373
Proc. SPIE 5377, Process effects in flare measurement, 0000 (28 May 2004); doi: 10.1117/12.535474
Proc. SPIE 5377, Scattering in liquid immersion lithography, 0000 (28 May 2004); doi: 10.1117/12.534194
Proc. SPIE 5377, Study of air-bubble-induced light scattering effect on image quality in 193-nm immersion lithography, 0000 (28 May 2004); doi: 10.1117/12.537255
Chromeless Phase Lithography
Proc. SPIE 5377, RET integration of CPL technology for random logic, 0000 (28 May 2004); doi: 10.1117/12.537414
Proc. SPIE 5377, 157-nm chromeless phase lithography with extremely high numerical aperture, 0000 (28 May 2004); doi: 10.1117/12.535150
Proc. SPIE 5377, New double exposure technique using alternating phase-shifting mask with reversed phase, 0000 (28 May 2004); doi: 10.1117/12.535152
CD Control and Performance
Proc. SPIE 5377, Evaluation of the critical dimension control requirements in the ITRS using statistical simulation and error budgets, 0000 (28 May 2004); doi: 10.1117/12.537107
Proc. SPIE 5377, Accurate gate CD control through the full-chip area using the dual model in the model-based OPC, 0000 (28 May 2004); doi: 10.1117/12.535027
Proc. SPIE 5377, Characterization of ACLV for advanced technology nodes using scatterometer-based lens fingerprinting technique, 0000 (28 May 2004); doi: 10.1117/12.535829
Proc. SPIE 5377, Monte-Carlo-based analysis of local CD variation and application to establish realistic process and tool error budgets, 0000 (28 May 2004); doi: 10.1117/12.534351
Image and Process Models
Proc. SPIE 5377, Fast calculation of images for high numerical aperture lithography, 0000 (28 May 2004); doi: 10.1117/12.537716
Proc. SPIE 5377, Graphical methods to help understand partially coherent imaging, 0000 (28 May 2004); doi: 10.1117/12.537191
Proc. SPIE 5377, Toward automatic mask and source optimization for optical lithography, 0000 (28 May 2004); doi: 10.1117/12.533215
Proc. SPIE 5377, A superfast 3D lithography simulator and its application for ULSI printability analysis, 0000 (28 May 2004); doi: 10.1117/12.535682
Proc. SPIE 5377, Neural-network-based approach to resist modeling and OPC, 0000 (28 May 2004); doi: 10.1117/12.535931
Process and OPC Convergence
Proc. SPIE 5377, New concepts in OPC, 0000 (28 May 2004); doi: 10.1117/12.535605
Proc. SPIE 5377, Calibration of OPC models for multiple focus conditions, 0000 (28 May 2004); doi: 10.1117/12.534123