PROCEEDINGS VOLUME 5401
MICRO- AND NANOELECTRONICS 2003 | 6-10 OCTOBER 2003
Micro- and Nanoelectronics 2003
MICRO- AND NANOELECTRONICS 2003
6-10 October 2003
Zvenigorod, Russian Federation
Lithography
Proc. SPIE 5401, EUV lithography: main challenges, 0000 (28 May 2004); doi: 10.1117/12.556943
Proc. SPIE 5401, Laboratory methods for investigations of multilayer mirrors in extreme ultraviolet and soft x-ray region, 0000 (28 May 2004); doi: 10.1117/12.556949
Proc. SPIE 5401, EUV radiation from plasma of a pseudospark discharge in its different stages, 0000 (28 May 2004); doi: 10.1117/12.556972
Proc. SPIE 5401, Process optimization using lithography simulation, 0000 (28 May 2004); doi: 10.1117/12.556987
Proc. SPIE 5401, The vortex mask design for irregular arrays of contact holes, 0000 (28 May 2004); doi: 10.1117/12.556988
Proc. SPIE 5401, Automatical optimization of pupil filters for high-resolution photolithography, 0000 (28 May 2004); doi: 10.1117/12.556989
Plasma Processing and Dry Surface Treatment
Proc. SPIE 5401, Microwave discharge on external surface of quartz plate, 0000 (28 May 2004); doi: 10.1117/12.556992
Proc. SPIE 5401, Comparative study of inductively coupled and microwave BF3 plasmas for microelectronic technology applications, 0000 (28 May 2004); doi: 10.1117/12.556998
Proc. SPIE 5401, Volume and heterogeneous chemistry in Cl2/Ar inductively coupled plasma, 0000 (28 May 2004); doi: 10.1117/12.557001
Proc. SPIE 5401, Etching mechanism of Au thin films in Cl2/Ar inductively coupled plasma, 0000 (28 May 2004); doi: 10.1117/12.557250
Proc. SPIE 5401, Tomographic reconstruction of space plasma inhomogeneities in wide-aperture plasma sources under strong restriction on the points of view, 0000 (28 May 2004); doi: 10.1117/12.557252
Proc. SPIE 5401, Residual photoresist removal from Si and GaAs surface atomic hydrogen flow treatment, 0000 (28 May 2004); doi: 10.1117/12.557263
Proc. SPIE 5401, Dry cleaning of fluorocarbon residues by atomic hydrogen flow, 0000 (28 May 2004); doi: 10.1117/12.557271
Thin Films
Proc. SPIE 5401, Ion beam synthesis of cobalt silicides in Si and SiGe, 0000 (28 May 2004); doi: 10.1117/12.557272
Proc. SPIE 5401, Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing, 0000 (28 May 2004); doi: 10.1117/12.557275
Proc. SPIE 5401, Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems, 0000 (28 May 2004); doi: 10.1117/12.557297
Proc. SPIE 5401, Ionic synthesis of silica-based glasses: prospect, simulation and applied aspects, 0000 (28 May 2004); doi: 10.1117/12.557301
Proc. SPIE 5401, PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry, 0000 (28 May 2004); doi: 10.1117/12.557303
Proc. SPIE 5401, The polyimides photoresist for multilevel-interconnect VLSI technology, 0000 (28 May 2004); doi: 10.1117/12.557330
Proc. SPIE 5401, Investigation of dissolution process of implanted silicon dioxide, 0000 (28 May 2004); doi: 10.1117/12.557439
Proc. SPIE 5401, Possibility of silicon on insulator structure production using wet surface treatment (chemical assembling) and smart technique, 0000 (28 May 2004); doi: 10.1117/12.557441
Proc. SPIE 5401, Features of electroforming in open sandwich-structures Si-SiO2-W for silicon of different types of conductivity, 0000 (28 May 2004); doi: 10.1117/12.557444
Proc. SPIE 5401, Investigation of influence of low-energy ion beam parameters on Reactive Ion Beam Synthesis (RIBS) of thin films, 0000 (28 May 2004); doi: 10.1117/12.557446
Proc. SPIE 5401, F+, B+ ion implantation into GaAs multilayer heterostructures, 0000 (28 May 2004); doi: 10.1117/12.557447
Materials for Photonics and Optoelectronics
Proc. SPIE 5401, Macroporous silicon: material science and technology, 0000 (28 May 2004); doi: 10.1117/12.557901
Proc. SPIE 5401, 1D photonic crystals based on periodically grooved Si, 0000 (28 May 2004); doi: 10.1117/12.557903
Proc. SPIE 5401, Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films, 0000 (28 May 2004); doi: 10.1117/12.557905
Proc. SPIE 5401, Polycrystalline silicon for semiconductor devices, 0000 (28 May 2004); doi: 10.1117/12.557920
Proc. SPIE 5401, Investigation of a nucleation stage of macropore formation in p-type silicon, 0000 (28 May 2004); doi: 10.1117/12.557921
Proc. SPIE 5401, Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate, 0000 (28 May 2004); doi: 10.1117/12.557928
Proc. SPIE 5401, Porous anodic alumina for photonics and optoelectronics, 0000 (28 May 2004); doi: 10.1117/12.557932
Proc. SPIE 5401, The strain distribution in Si lattice of the layer containing &#946;-FeSi<sub>2</sub> precipitates, 0000 (28 May 2004); doi: 10.1117/12.557967
Nanostructures Technologies
Proc. SPIE 5401, Selective growth of oriented carbon nanotubes, 0000 (28 May 2004); doi: 10.1117/12.557977
Proc. SPIE 5401, Glass-encapsulated single-crystal nanowires and filiform nanostructures fabrication, 0000 (28 May 2004); doi: 10.1117/12.558010
Proc. SPIE 5401, Bi film growing for nanowire fabrication, 0000 (28 May 2004); doi: 10.1117/12.558309
Proc. SPIE 5401, An investigation into nano-dimensional fractal film structures, 0000 (28 May 2004); doi: 10.1117/12.558315
Proc. SPIE 5401, Surface morphology transitions induced by ion beam action during Ge/Si MBE, 0000 (28 May 2004); doi: 10.1117/12.558329
Proc. SPIE 5401, Effect of electrostatic interaction between conductive cantilever and metal film on local anododic oxidation, 0000 (28 May 2004); doi: 10.1117/12.558342
Proc. SPIE 5401, Electron-beam-induced deposition of iron carbon nanostructures from iron dodecacarbonyl vapor, 0000 (28 May 2004); doi: 10.1117/12.558349
Devices and IC
Proc. SPIE 5401, Developments of terahertz wave generation technologies, 0000 (28 May 2004); doi: 10.1117/12.558380
Proc. SPIE 5401, 10-GHz 1:2 switch MMIC for the communication and radar applications, 0000 (28 May 2004); doi: 10.1117/12.558387
Proc. SPIE 5401, FET on ultrathin SOI (fabrication and research), 0000 (28 May 2004); doi: 10.1117/12.558394
Proc. SPIE 5401, Gamma radiation tolerance of 0.5-µm SOI MOSFETs, 0000 (28 May 2004); doi: 10.1117/12.558405
Proc. SPIE 5401, Influence of cells-MOSFETs (with Schottky barrier drain contact) location in power IC on electrical device characteristics, 0000 (28 May 2004); doi: 10.1117/12.558410
Proc. SPIE 5401, Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices, 0000 (28 May 2004); doi: 10.1117/12.558416
Proc. SPIE 5401, AlGaAs-GaAs heterostructure &#948;-doped field-effect transistor (&#948;-FET), 0000 (28 May 2004); doi: 10.1117/12.558432
Proc. SPIE 5401, The optimization of relative current sensitivity of bipolar magnetotransistor, 0000 (28 May 2004); doi: 10.1117/12.558445
Physics of Nanostructures and Nanodevices
Proc. SPIE 5401, Electron-phonon interaction in 2D heterostructures, 0000 (28 May 2004); doi: 10.1117/12.558455
Proc. SPIE 5401, Spatially inhomogeneous effects at the interference of electron waves in semiconductor 1D nanostructures, 0000 (28 May 2004); doi: 10.1117/12.558476
Proc. SPIE 5401, Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures, 0000 (28 May 2004); doi: 10.1117/12.558480
Proc. SPIE 5401, New peculiarities of interband tunneling in broken-gap heterostructures, 0000 (28 May 2004); doi: 10.1117/12.558531
Proc. SPIE 5401, Spin transport in Ge/Si quantum dot array, 0000 (28 May 2004); doi: 10.1117/12.558535
Proc. SPIE 5401, Investigation of transport mechanisms in a-SiGe:H/c-Si heterostructures, 0000 (28 May 2004); doi: 10.1117/12.558758
Proc. SPIE 5401, The structure and electronic properties of Zr and Hf nitrides and oxynitrides, 0000 (28 May 2004); doi: 10.1117/12.558760
Proc. SPIE 5401, The discretization of minority carrier generation kinetics at the semiconductor surface bordering inhomogeneous insulator, 0000 (28 May 2004); doi: 10.1117/12.558769
Proc. SPIE 5401, Analysis of the metal single-electron arrays based on different materials, 0000 (28 May 2004); doi: 10.1117/12.558771
Proc. SPIE 5401, Diffusive and ballistic regimes for transfer resistances, 0000 (28 May 2004); doi: 10.1117/12.558777
Proc. SPIE 5401, The equation of two-dimensional island growth on the incommensurable monocrystalline substrate, 0000 (28 May 2004); doi: 10.1117/12.558784