PROCEEDINGS VOLUME 5446
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI | 14-16 APRIL 2004
Photomask and Next-Generation Lithography Mask Technology XI
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI
14-16 April 2004
Yokohama, Japan
Photomask and Lithography Strategy
Proc. SPIE 5446, Mask R&D activities at the Advanced Mask Technology Center, 0000 (20 August 2004); doi: 10.1117/12.557674
Photomask Processes and Materials
Proc. SPIE 5446, New approach for quartz dry etching using hardmask for sub-90-nm photomask technology, 0000 (20 August 2004); doi: 10.1117/12.557675
Proc. SPIE 5446, Global CD uniformity improvement using dose modulation and pattern correction of pattern density-dependent and position-dependent errors, 0000 (20 August 2004); doi: 10.1117/12.557676
Proc. SPIE 5446, Investigation of Cr defect in high Cr load logic mask, 0000 (20 August 2004); doi: 10.1117/12.557677
Proc. SPIE 5446, Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024, 0000 (20 August 2004); doi: 10.1117/12.557686
Proc. SPIE 5446, Chemical characteristics of negative-tone chemically amplified resist for advanced mask making, 0000 (20 August 2004); doi: 10.1117/12.557692
Photomask and Lithography Strategy
Proc. SPIE 5446, Patterning strategy for low-K<sub>1</sub> lithography, 0000 (20 August 2004); doi: 10.1117/12.557697
Cleaning and Quality Assurance
Proc. SPIE 5446, 0.13/0.15-µm production reticle process window qualification procedure for 200mm manufacturing fab, 0000 (20 August 2004); doi: 10.1117/12.557698
Proc. SPIE 5446, Improving photomask surface properties through a combination of dry and wet cleaning steps, 0000 (20 August 2004); doi: 10.1117/12.557700
Proc. SPIE 5446, Root cause analysis for crystal growth at ArF excimer laser lithography, 0000 (20 August 2004); doi: 10.1117/12.557701
Proc. SPIE 5446, Evaluation, reduction, and monitoring of progressive defects on 193-nm reticles for low-k1 process, 0000 (20 August 2004); doi: 10.1117/12.557702
Proc. SPIE 5446, Investigation of sub-pellicle defect formation at KrF lithography, 0000 (20 August 2004); doi: 10.1117/12.557703
Photomask Processes and Materials
Proc. SPIE 5446, Achieving 65-nm design rule dry etch performance: a study of CD bias, uniformity, and linearity on binary chrome photomasks, 0000 (20 August 2004); doi: 10.1117/12.557706
Proc. SPIE 5446, Quartz etch optimization, 0000 (20 August 2004); doi: 10.1117/12.557707
Proc. SPIE 5446, Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development), 0000 (20 August 2004); doi: 10.1117/12.557708
Proc. SPIE 5446, Improvement of develop loading effect in the FEP-171 process, 0000 (20 August 2004); doi: 10.1117/12.557709
Proc. SPIE 5446, Spin stream develop process for ZEP resist, 0000 (20 August 2004); doi: 10.1117/12.557710
Proc. SPIE 5446, The influence of spatio-temporal variation of temperature distribution in a polymer solution on a flat substrate on formation of polymer film's thickness distribution during the drying process, based on results of simulation of the modified model, 0000 (20 August 2004); doi: 10.1117/12.557711
Proc. SPIE 5446, Analysis of mask CD error by dose modulation for fogging effect, 0000 (20 August 2004); doi: 10.1117/12.557713
Proc. SPIE 5446, Global CD uniformity improvement for CAR masks by adaptive post-exposure bake with CD measurement feedback, 0000 (20 August 2004); doi: 10.1117/12.557714
Proc. SPIE 5446, A trial to quantify and classify process non-uniformity into baking and development, 0000 (20 August 2004); doi: 10.1117/12.557715
Proc. SPIE 5446, Comparative study of two negative CAR resists: EN-024M and NEB 31, 0000 (20 August 2004); doi: 10.1117/12.557718
Proc. SPIE 5446, Alternating aperture phase shift mask process using e-beam lithography for the second level, 0000 (20 August 2004); doi: 10.1117/12.557719
Proc. SPIE 5446, Imaging properties of a leading-edge DUV laser generated photomask, 0000 (20 August 2004); doi: 10.1117/12.557720
Proc. SPIE 5446, Decrease of chrome residue on MoSiON in embedded attenuated-PSM processing, 0000 (20 August 2004); doi: 10.1117/12.557721
Cleaning and Quality Assurance
Proc. SPIE 5446, Surface organic compound contamination as a significant factor in substrate transmittance reduction in the VUV region, 0000 (20 August 2004); doi: 10.1117/12.557722
Proc. SPIE 5446, Progressive architecture of mask supply chain and integrated operation system supporting extreme-QTAT device manufacturing, 0000 (20 August 2004); doi: 10.1117/12.557724
Inspection and Repair
Proc. SPIE 5446, 257-nm wavelength mask inspection for 65-nm node reticles, 0000 (20 August 2004); doi: 10.1117/12.557725
Proc. SPIE 5446, Optical mask inspection strategy for 65-nm node and beyond, 0000 (20 August 2004); doi: 10.1117/12.557726
Proc. SPIE 5446, The judgment criteria of halftone pinhole defects, 0000 (20 August 2004); doi: 10.1117/12.557728
Proc. SPIE 5446, An analysis of in-process pattern inspection benefit-to-cost relationship, 0000 (20 August 2004); doi: 10.1117/12.557729
Proc. SPIE 5446, Evaluation of mask quality control methods addressing progressive haze issues, 0000 (20 August 2004); doi: 10.1117/12.557730
Proc. SPIE 5446, FIB mask repair technology for electron projection lithography, 0000 (20 August 2004); doi: 10.1117/12.557731
Proc. SPIE 5446, Photomask clear defects repair using ultrafast laser technology, 0000 (20 August 2004); doi: 10.1117/12.557733
Proc. SPIE 5446, Photomask quality assessment solution for 90-nm technology node, 0000 (20 August 2004); doi: 10.1117/12.557734
Proc. SPIE 5446, Correlation of inspection methods in characterizing nanomachined photomask repairs, 0000 (20 August 2004); doi: 10.1117/12.557736
Proc. SPIE 5446, Nano-scale dimensional focused ion beam repair of quartz defects on 90 nm node alternating aperture phase shift masks, 0000 (20 August 2004); doi: 10.1117/12.557737
Mask Data Preparation and Design Process Integration
Proc. SPIE 5446, Improvement of unified mask data formats for EB writers, 0000 (20 August 2004); doi: 10.1117/12.557738
Proc. SPIE 5446, An agile mask data preparation and writer dispatching approach, 0000 (20 August 2004); doi: 10.1117/12.557739
Proc. SPIE 5446, OASIS-based unification of mask data representation, 0000 (20 August 2004); doi: 10.1117/12.557740
Proc. SPIE 5446, The guideline of reticle data management, 0000 (20 August 2004); doi: 10.1117/12.557741
OPC and Lithography Technology
Proc. SPIE 5446, Model-based interpretation filtering for complex two-dimensional layout features, 0000 (20 August 2004); doi: 10.1117/12.557742
Proc. SPIE 5446, Study of mask corner rounding effects on lithographic patterning for 90-nm technology node and beyond, 0000 (20 August 2004); doi: 10.1117/12.557745
Proc. SPIE 5446, Contact hole reticle optimization by using interference mapping lithography (IML), 0000 (20 August 2004); doi: 10.1117/12.557747
Proc. SPIE 5446, Nanofabrication of nanopattern and microdevices using contact/proximity lithography, 0000 (20 August 2004); doi: 10.1117/12.557750
Phase Shift Masks
Proc. SPIE 5446, Application of CPL with Interference Mapping Lithography to generate random contact reticle designs for the 65-nm node, 0000 (20 August 2004); doi: 10.1117/12.557751
Proc. SPIE 5446, Photomask with interior nonprinting phase-shifting window for printing small post structures, 0000 (20 August 2004); doi: 10.1117/12.557752
Proc. SPIE 5446, Optimization of the chromium-shielding attenuated phase shift mask for 157-nm lithography, 0000 (20 August 2004); doi: 10.1117/12.557753
Proc. SPIE 5446, The study of phase angle effects to wafer process window using 193-nm EAPSM in a 300-mm wafer manufacturing environment, 0000 (20 August 2004); doi: 10.1117/12.557754
Equipment
Proc. SPIE 5446, Analysis of dose modulation method for fogging effect correction at 50-KeV e-beam system, 0000 (20 August 2004); doi: 10.1117/12.557757
Proc. SPIE 5446, High-alignment-accuracy EB writing of phase shift image for 65-nm node masks, 0000 (20 August 2004); doi: 10.1117/12.557758
Proc. SPIE 5446, The study of high-speed electron beam deflection technology for VSB writers, 0000 (20 August 2004); doi: 10.1117/12.557759
Proc. SPIE 5446, Unique advanced homodyne laser interferometer system provides a cost-effective and simple position feedback solution for precision motion control applications, 0000 (20 August 2004); doi: 10.1117/12.557760
Metrology
Proc. SPIE 5446, Actinic aerial image measurement for qualification of defect on 157-nm photomask, 0000 (20 August 2004); doi: 10.1117/12.557762
Proc. SPIE 5446, Application of atomic force microscope to 65-nm node photomasks, 0000 (20 August 2004); doi: 10.1117/12.557763