SECOND INTERNATIONAL SYMPOSIUM ON FLUCTUATIONS AND NOISE
26-28 May 2004
Maspalomas, Gran Canaria Island, Spain
Noise Theory in Linear Devices
Proc. SPIE 5470, Nonlocal effects and transfer fields for electronic noise in small devices, 0000 (25 May 2004); doi: 10.1117/12.545597
Proc. SPIE 5470, Extension of the characteristic potential method for noise calculation and its application to shot noise in semiconductor devices, 0000 (25 May 2004); doi: 10.1117/12.546924
Proc. SPIE 5470, Current noise in semiconductor nanoscale devices, 0000 (25 May 2004); doi: 10.1117/12.546659
Noise in MOSFETs
Proc. SPIE 5470, Characterization, modeling, and implementation of high-frequency noise in MOSFETs for RF IC design, 0000 (25 May 2004); doi: 10.1117/12.547190
Proc. SPIE 5470, MOSFET noise modeling and parameter extraction, 0000 (25 May 2004); doi: 10.1117/12.546997
Proc. SPIE 5470, Nonlocal transport and thermal noise of the nanoscale MOSFET, 0000 (25 May 2004); doi: 10.1117/12.546941
Proc. SPIE 5470, A comprehensive study of thermal noise in the MOS transistor, 0000 (25 May 2004); doi: 10.1117/12.547090
Proc. SPIE 5470, Influence of 2D electrostatic effects on the high-frequency noise behavior of sub-100-nm scaled MOSFETs, 0000 (25 May 2004); doi: 10.1117/12.546966
Noise Performance of Advanced Si FETs and Circuits
Proc. SPIE 5470, Noise in Si/SiGe and Ge/SiGe MODFET, 0000 (25 May 2004); doi: 10.1117/12.546770
Proc. SPIE 5470, Noise modeling and performance in 0.15-um fully depleted SOI MOSFET, 0000 (25 May 2004); doi: 10.1117/12.546669
Proc. SPIE 5470, Noise of analog SOI CMOS integrated circuits at millimeter wave frequencies, 0000 (25 May 2004); doi: 10.1117/12.546373
Proc. SPIE 5470, Modeling of the noise behavior of graded bandgap channel MOSFET at GHz frequencies, 0000 (25 May 2004); doi: 10.1117/12.547339
Noise Performance of Bipolar Devices and Circuits
Proc. SPIE 5470, Microwave noise in III-V and SiGe based HBTs, comparison, trends, numbers, 0000 (25 May 2004); doi: 10.1117/12.546899
Proc. SPIE 5470, Investigation of the rf-noise behavior of InP-based DHBT with InGaAs base and GaAsSb base, 0000 (25 May 2004); doi: 10.1117/12.546981
Proc. SPIE 5470, Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation, 0000 (25 May 2004); doi: 10.1117/12.545991
Proc. SPIE 5470, High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology, 0000 (25 May 2004); doi: 10.1117/12.544513
1/f Noise in MOSFETs
Proc. SPIE 5470, 1/f noise in deep submicron CMOS technology for RF and analogue applications, 0000 (25 May 2004); doi: 10.1117/12.546962
Proc. SPIE 5470, Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs, 0000 (25 May 2004); doi: 10.1117/12.546971
Proc. SPIE 5470, Low-frequency noise in SiGeC-based pMOSFETs, 0000 (25 May 2004); doi: 10.1117/12.548006
1/f Noise in Bipolar Devices
Proc. SPIE 5470, Modeling of 1/f noise in heterostructure devices, 0000 (25 May 2004); doi: 10.1117/12.547042
Proc. SPIE 5470, Influence of the emitter-base junction depth on the low frequency noise of Si/SiGeC heterojunction bipolar transistors, 0000 (25 May 2004); doi: 10.1117/12.546967
Proc. SPIE 5470, Low frequency noise in 4H-SiC BJTs, 0000 (25 May 2004); doi: 10.1117/12.546075
Proc. SPIE 5470, Base low-frequency noise analysis of InP/InGaAs/InP DHBT submitted to bias and thermal stresses, 0000 (25 May 2004); doi: 10.1117/12.547056
Noise in GaN Devices
Proc. SPIE 5470, Analysis of low frequency noise in GaN based HEMT technologies, 0000 (25 May 2004); doi: 10.1117/12.547061
Proc. SPIE 5470, 1/f noise in GaN/AlGaN heterostructure field effect transistors under condition of strong geometric magnetoresistance, 0000 (25 May 2004); doi: 10.1117/12.546748
Proc. SPIE 5470, Low frequency noise behavior in GaN HEMT’s on silicon substrate, 0000 (25 May 2004); doi: 10.1117/12.547046
Noise in Devices Under Large Signal Operation
Proc. SPIE 5470, Simulation of cyclostationary noise in semiconductor devices, 0000 (25 May 2004); doi: 10.1117/12.546667
Proc. SPIE 5470, Noise in Schottky-barrier diodes: from static- to large-signal operation, 0000 (25 May 2004); doi: 10.1117/12.546666
Proc. SPIE 5470, Identification procedures for the charge-controlled non-linear noise model of microwave electron devices, 0000 (25 May 2004); doi: 10.1117/12.547060
Proc. SPIE 5470, Low frequency noise cancellation in resistive FET mixers, 0000 (25 May 2004); doi: 10.1117/12.544854
Phase Noise in Oscillators and Related Circuits
Noise Measurement Techniques
Proc. SPIE 5470, Experimental results of gain fluctuations and noise in microwave low-noise cryogenic amplifiers, 0000 (25 May 2004); doi: 10.1117/12.547097
Proc. SPIE 5470, Thermal de-embedding procedure for cryogenic on wafer high frequency noise measurement, 0000 (25 May 2004); doi: 10.1117/12.545997
Proc. SPIE 5470, An extension to wider frequency band of a frequency and time analysis method to extract noise parameters, 0000 (25 May 2004); doi: 10.1117/12.546529
Proc. SPIE 5470, Simultaneous extraction of the small-signal equivalent circuit elements and noise parameters of HBTs, 0000 (25 May 2004); doi: 10.1117/12.545079
Poster Session
Proc. SPIE 5470, Noise figure reduction techniques in LNA's for wide band multistandard RF receivers, 0000 (25 May 2004); doi: 10.1117/12.546958
Proc. SPIE 5470, On-wafer noise sources characterization, 0000 (25 May 2004); doi: 10.1117/12.546375
Proc. SPIE 5470, A new statistical model of non linear noisy oscillator, 0000 (25 May 2004); doi: 10.1117/12.547637
Proc. SPIE 5470, Long term stability estimation of DC electrical sources from low frequency noise measurements, 0000 (25 May 2004); doi: 10.1117/12.547137
Proc. SPIE 5470, Generalized Nyquist formula and quality factor, 0000 (25 May 2004); doi: 10.1117/12.546306
Proc. SPIE 5470, The noise behavior of JFET transistors from room temperature down to 80 k, 0000 (25 May 2004); doi: 10.1117/12.555775
Proc. SPIE 5470, Characterization and modeling of low frequency noise in sub-0.1-µm SiGe pMOSFET's, 0000 (25 May 2004); doi: 10.1117/12.546495
Noise Theory in Linear Devices
Proc. SPIE 5470, Small and large signal trap-assisted GR noise modeling in semiconductor devices, 0000 (25 May 2004); doi: 10.1117/12.547063
Poster Session
Proc. SPIE 5470, Coherent tools for physical-based simulation and characterization of noise in semiconductor devices oriented to nonlinear microwave circuit CAD, 0000 (25 May 2004); doi: 10.1117/12.546513
Proc. SPIE 5470, Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise, 0000 (25 May 2004); doi: 10.1117/12.546994
Proc. SPIE 5470, Cross-correlation measurements in searching for a trace of the gate voltage noise in a JFET, 0000 (25 May 2004); doi: 10.1117/12.545328
Proc. SPIE 5470, LF-band noise in MOSFET in low power operation, 0000 (25 May 2004); doi: 10.1117/12.544230
Proc. SPIE 5470, Experimental and theoretical analysis of 1/f noise in polysilicon thin film transistors, 0000 (25 May 2004); doi: 10.1117/12.547031
Proc. SPIE 5470, Barrier height dependence of low frequency noise in poly-Si thin-film transistors, 0000 (25 May 2004); doi: 10.1117/12.547191
Proc. SPIE 5470, Direct extraction of the McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nanocrystals embedded in gate SiO2, 0000 (25 May 2004); doi: 10.1117/12.546716
Noise in GaN Devices
Proc. SPIE 5470, Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction, 0000 (25 May 2004); doi: 10.1117/12.547022
Poster Session
Proc. SPIE 5470, Noise of optoelectronic coupled devices, 0000 (25 May 2004); doi: 10.1117/12.547237
Proc. SPIE 5470, Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs, 0000 (25 May 2004); doi: 10.1117/12.548536
Proc. SPIE 5470, Phase noise in a Colpitts oscillator, 0000 (25 May 2004); doi: 10.1117/12.549267
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