PROCEEDINGS VOLUME 5504
20TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS | 12-14 JANUARY 2004
20th European Conference on Mask Technology for Integrated Circuits and Microcomponents
20TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS
12-14 January 2004
Dresden, Germany
Next-Generation Mask and Lithography Techniques: 157 nm
Proc. SPIE 5504, Hard pellicle investigation for 157-nm lithography: impact on overlay, 0000 (2 June 2004); doi: 10.1117/12.568003
Measurement and Inspection
Proc. SPIE 5504, Aerial image measurement technique for today's and future 193-nm lithography mask requirements, 0000 (2 June 2004); doi: 10.1117/12.568016
Proc. SPIE 5504, Measurement results on after-etch resist coated features on the new Leica Microsystems' LWM270 DUV critical dimension metrology system, 0000 (2 June 2004); doi: 10.1117/12.568019
Proc. SPIE 5504, Semi-transparent isolated defects detection by die-to-database mask inspection using virtual scanning algorithms for sub-pixel resolution, 0000 (2 June 2004); doi: 10.1117/12.568022
Simulation and Data Processing
Proc. SPIE 5504, Determining the transfer function of a mask fabrication process, 0000 (2 June 2004); doi: 10.1117/12.568023
Proc. SPIE 5504, Towards systematic CD process control for e-beam lithography, 0000 (2 June 2004); doi: 10.1117/12.568025
Proc. SPIE 5504, OASIS: progress on implementing the new stream format for containing data size explosion, 0000 (2 June 2004); doi: 10.1117/12.568027
Proc. SPIE 5504, The guideline of reticle data management (Ver. 2), 0000 (2 June 2004); doi: 10.1117/12.568028
Proc. SPIE 5504, January 2004 update on the SEMI standards task force on photomask qualification terminology, 0000 (2 June 2004); doi: 10.1117/12.568031
History
Proc. SPIE 5504, Looking back: artwork and mask making in Dresden for the East German megabit chip project, 0000 (2 June 2004); doi: 10.1117/12.568004
Proc. SPIE 5504, Monitoring strategy to match the advanced fabs, 0000 (2 June 2004); doi: 10.1117/12.568005
Next-Generation Mask and Lithography Techniques: EUVL
Proc. SPIE 5504, Optimized processes and absorber-stack materials for EUV masks, 0000 (2 June 2004); doi: 10.1117/12.568010
Proc. SPIE 5504, The impact of EUV mask defects on lithographic process performance, 0000 (2 June 2004); doi: 10.1117/12.568013
Proc. SPIE 5504, Effect of electrostatic chucking on EUVL mask flatness, 0000 (2 June 2004); doi: 10.1117/12.568014
Etch: Processes
Proc. SPIE 5504, Investigation of Cr etch chamber seasoning, 0000 (2 June 2004); doi: 10.1117/12.568015
Proc. SPIE 5504, Implementation of a transparent etch stop layer for an improved alternating PSM, 0000 (2 June 2004); doi: 10.1117/12.568018
Metrology
Proc. SPIE 5504, Metrological characterization of new CD photomask standards, 0000 (2 June 2004); doi: 10.1117/12.568020
Next-Generation Mask and Lithography Techniques: 193-nm Immersion and LEEPL
Proc. SPIE 5504, Predicting microfluidic response during immersion lithography scanning, 0000 (2 June 2004); doi: 10.1117/12.568024
Proc. SPIE 5504, Low-energy electron beam proximity projection lithography (LEEPL): the world's first e-beam production tool, LEEPL 3000, 0000 (2 June 2004); doi: 10.1117/12.568029
Next-Generation Mask and Lithography Techniques: E-Beam Direct Write and ML2 Maskless Lithography
Proc. SPIE 5504, Proposal for a distributed parallel system for high-throughput maskless e-beam lithography, 0000 (2 June 2004); doi: 10.1117/12.568030
Application
Proc. SPIE 5504, Contact layer printing using alternating phase-shifting masks: mask making, patterning results, and production implementation, 0000 (2 June 2004); doi: 10.1117/12.568032
Proc. SPIE 5504, Avoidance/reduction of charging effects in case of partially insufficient substrate conductivity when using ESPACER 300Z, 0000 (2 June 2004); doi: 10.1117/12.568033
Imprint Mask and Lithography
Proc. SPIE 5504, Dynamic mask defects in hot embossing lithography, 0000 (2 June 2004); doi: 10.1117/12.568034
Proc. SPIE 5504, Shaped beam technology for nano-imprint mask lithography, 0000 (2 June 2004); doi: 10.1117/12.568035
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