PROCEEDINGS VOLUME 5564
OPTICAL SCIENCE AND TECHNOLOGY, THE SPIE 49TH ANNUAL MEETING | 2-6 AUGUST 2004
Infrared Detector Materials and Devices
IN THIS VOLUME

0 Sessions, 21 Papers, 0 Presentations
IR FPA's  (4)
OPTICAL SCIENCE AND TECHNOLOGY, THE SPIE 49TH ANNUAL MEETING
2-6 August 2004
Denver, Colorado, United States
IR FPA's
Proc. SPIE 5564, Multicolor LWIR focal plane array technology for space- and ground-based applications, 0000 (22 October 2004); doi: 10.1117/12.557971
Proc. SPIE 5564, Design and development of high-performance radiation-hardened antireflection coatings for LWIR HgCdTe focal plane arrays, 0000 (22 October 2004); doi: 10.1117/12.565138
Proc. SPIE 5564, Design and development of multicolor detector arrays, 0000 (22 October 2004); doi: 10.1117/12.565140
Proc. SPIE 5564, Large-format IRFPA development on silicon, 0000 (22 October 2004); doi: 10.1117/12.562812
HgCdTe Material Processing
Proc. SPIE 5564, Very long wavelength (>15 µm) HgCdTe photodiodes by liquid phase epitaxy, 0000 (22 October 2004); doi: 10.1117/12.557317
Proc. SPIE 5564, Advances in liquid phase epitaxial growth of Hg1-XCdXTe for SWIR through VLWIR photodiodes, 0000 (22 October 2004); doi: 10.1117/12.566470
Proc. SPIE 5564, Measurement of electron effective mass ratios in Hg1-xCdxTe for 0.20 ≤ x ≤ 0.30 between 77K and 296K, 0000 (22 October 2004); doi: 10.1117/12.567426
Proc. SPIE 5564, Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy, 0000 (22 October 2004); doi: 10.1117/12.567430
MWIR and Uncooled Devices
Proc. SPIE 5564, Fundamental physics and practical realization of mid-infrared photodetectors, 0000 (22 October 2004); doi: 10.1117/12.555684
Proc. SPIE 5564, Optimizing indium aluminum antimonide LEDs and photodiodes for gas sensing applications, 0000 (22 October 2004); doi: 10.1117/12.560577
Poster Session
Proc. SPIE 5564, Uncooled InAs photodiodes for optoelectronic sensors, 0000 (22 October 2004); doi: 10.1117/12.561401
MWIR and Uncooled Devices
Proc. SPIE 5564, Phase transition in ferroelectric hemicyanine Langmuir-Blodgett multilayers, 0000 (22 October 2004); doi: 10.1117/12.558981
Poster Session
Proc. SPIE 5564, The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method, 0000 (22 October 2004); doi: 10.1117/12.561406
MWIR and Uncooled Devices
Proc. SPIE 5564, Annealing behavior of vanadium oxide films prepared by modified ion-beam-enhanced deposition, 0000 (22 October 2004); doi: 10.1117/12.561411
Proc. SPIE 5564, Transient mechanical and electrical properties of uncooled resistive microbolometer focal plane arrays, 0000 (22 October 2004); doi: 10.1117/12.562063
HgCdTe Material Processing
Proc. SPIE 5564, The HgCdTe electron avalanche photodiode, 0000 (22 October 2004); doi: 10.1117/12.565142
Other IR Devices
Proc. SPIE 5564, High-speed CMOS-compatible photodetectors for optical interconnects, 0000 (22 October 2004); doi: 10.1117/12.557049
Proc. SPIE 5564, High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy, 0000 (22 October 2004); doi: 10.1117/12.558991
Proc. SPIE 5564, Development of a reliable transmission-based laser sensor system for intelligent transportation systems, 0000 (22 October 2004); doi: 10.1117/12.560642
Proc. SPIE 5564, Photoelectric properties of crystalline silicon: theory and application, 0000 (22 October 2004); doi: 10.1117/12.566064
MWIR and Uncooled Devices
Proc. SPIE 5564, MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates, 0000 (22 October 2004); doi: 10.1117/12.568012
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