PROCEEDINGS VOLUME 5567
PHOTOMASK TECHNOLOGY | 13-17 SEPTEMBER 2004
24th Annual BACUS Symposium on Photomask Technology
PHOTOMASK TECHNOLOGY
13-17 September 2004
Monterey, California, United States
Keynote Session
Proc. SPIE 5567, Mask industry assessment: 2004, 0000 (6 December 2004); doi: 10.1117/12.565034
Proc. SPIE 5567, EUV mask pilot line at Intel Corporation, 0000 (6 December 2004); doi: 10.1117/12.569176
Proc. SPIE 5567, Phase defect printability and mask inspection capability of 65-nm technology node Alt-PSM for ArF lithography (Photomask Japan Best Paper), 0000 (6 December 2004); doi: 10.1117/12.580003
Mask Inspection I
Proc. SPIE 5567, Aerial-image-based inspection on subresolution scattering bars, 0000 (6 December 2004); doi: 10.1117/12.579749
Proc. SPIE 5567, DIVAS: fully automated simulation based mask defect dispositioning and defect management system, 0000 (6 December 2004); doi: 10.1117/12.569096
Proc. SPIE 5567, Chromeless phase lithography reticle defect inspection challenges and solutions, 0000 (6 December 2004); doi: 10.1117/12.569287
Proc. SPIE 5567, Mask defect inspection study with high-speed mask inspection system, 0000 (6 December 2004); doi: 10.1117/12.569226
Mask Inspection II
Proc. SPIE 5567, Wavelength-dependent spot defects on advanced embedded attenuated phase-shift masks, 0000 (6 December 2004); doi: 10.1117/12.570563
Proc. SPIE 5567, Comprehensive defect detection featuring die-to-database reflected light inspection, 0000 (6 December 2004); doi: 10.1117/12.570529
Proc. SPIE 5567, A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low-k1 lithography, 0000 (6 December 2004); doi: 10.1117/12.568874
Proc. SPIE 5567, MEEF-based mask inspection, 0000 (6 December 2004); doi: 10.1117/12.569330
Design and Process Integration/DFM
Proc. SPIE 5567, Performance optimization for gridded-layout standard cells, 0000 (6 December 2004); doi: 10.1117/12.569398
Proc. SPIE 5567, Integrating RET and mask manufacturability in designs for local interconnect for sub-100-nm trenches, 0000 (6 December 2004); doi: 10.1117/12.569848
Proc. SPIE 5567, Accelerating yield ramp through design and manufacturing collaboration, 0000 (6 December 2004); doi: 10.1117/12.572591
Proc. SPIE 5567, Design, mask, and manufacturability, 0000 (6 December 2004); doi: 10.1117/12.569309
Advanced Mask Etch
Proc. SPIE 5567, Chrome dry etching for 65-nm node mask manufacturing, 0000 (6 December 2004); doi: 10.1117/12.568539
Proc. SPIE 5567, Reduction of radial CD errors and Cr loading effects in 90-nm binary NCAR mask process through chrome etch DOE, 0000 (6 December 2004); doi: 10.1117/12.568423
Proc. SPIE 5567, Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV, 0000 (6 December 2004); doi: 10.1117/12.571468
Proc. SPIE 5567, Software to simulate dry etch in photomask fabrication, 0000 (6 December 2004); doi: 10.1117/12.575426
Resist and Processing Technologies
Proc. SPIE 5567, Evaluation of a new-generation photomask develop system for CAR, 0000 (6 December 2004); doi: 10.1117/12.568393
Proc. SPIE 5567, Patterning performance of most recent e-beam-sensitive CARs for advanced mask making: an update, 0000 (6 December 2004); doi: 10.1117/12.568819
Proc. SPIE 5567, Quantitative analysis of develop loading effect and its application, 0000 (6 December 2004); doi: 10.1117/12.569199
Proc. SPIE 5567, High flow rate development: process optimization using megasonic immersion development (MID), 0000 (6 December 2004); doi: 10.1117/12.569774
Proc. SPIE 5567, FEP-171 resist thickness optimization and dry etch screening on NTAR7 chrome substrates for Sigma7300 DUV laser pattern generator, 0000 (6 December 2004); doi: 10.1117/12.569653
Proc. SPIE 5567, Calibrating grayscale direct write bimetallic photomasks to create 3D photoresist structures, 0000 (6 December 2004); doi: 10.1117/12.569405
Mask Substrates and Materials
Proc. SPIE 5567, R-mask: a new concept and its application for small-volume production, 0000 (6 December 2004); doi: 10.1117/12.572200
Proc. SPIE 5567, Can we afford to replace chrome?, 0000 (6 December 2004); doi: 10.1117/12.565124
Mask Patterning
Proc. SPIE 5567, Next-generation DUV ALTA mask patterning capabilities, 0000 (6 December 2004); doi: 10.1117/12.570291
Proc. SPIE 5567, Conformal mapping in microlithography, 0000 (6 December 2004); doi: 10.1117/12.561106
Proc. SPIE 5567, Writing strategy and electron-beam system with an arbitrarily shaped beam, 0000 (6 December 2004); doi: 10.1117/12.568677
Proc. SPIE 5567, PMJ (Photomask Japan) 2004 panel overview: Issues on mask technology for 65-nm lithography with ArF, 0000 (6 December 2004); doi: 10.1117/12.580023
Mask Business and Management
Proc. SPIE 5567, A multi-objective floorplanner for shuttle mask optimization, 0000 (6 December 2004); doi: 10.1117/12.569345
Proc. SPIE 5567, Multilayer and multiproduct masks: cost reduction methodology, 0000 (6 December 2004); doi: 10.1117/12.569722
Mask Data Preparation and MRC
Proc. SPIE 5567, Yield- and cost-driven fracturing for variable shaped-beam mask writing, 0000 (6 December 2004); doi: 10.1117/12.568526
Proc. SPIE 5567, Predicting computer resource usage, 0000 (6 December 2004); doi: 10.1117/12.568682
Proc. SPIE 5567, Full-chip manufacturing reliability check and correction (MRC2): a first step toward design for manufacturability with low k1 lithography, 0000 (6 December 2004); doi: 10.1117/12.568670
Proc. SPIE 5567, Distributed processing in integrated data preparation flow, 0000 (6 December 2004); doi: 10.1117/12.569324
Simulation
Proc. SPIE 5567, Phase-defocus windows for alternating phase shifting mask, 0000 (6 December 2004); doi: 10.1117/12.569216
Proc. SPIE 5567, The impact of mask topography on binary reticles at the 65-nm node, 0000 (6 December 2004); doi: 10.1117/12.569489
Proc. SPIE 5567, Model-assisted complementary double exposure with source optimization, 0000 (6 December 2004); doi: 10.1117/12.568576
Proc. SPIE 5567, Resist model calibration using 2D developed patterns for low-k1 process optimization and wafer printing predictions, 0000 (6 December 2004); doi: 10.1117/12.568671
Proc. SPIE 5567, Characterizing the demons in high-NA phase-shifting masks, 0000 (6 December 2004); doi: 10.1117/12.568758
Repair
Proc. SPIE 5567, E-beam mask repair: fundamental capability and applications, 0000 (6 December 2004); doi: 10.1117/12.569210
Proc. SPIE 5567, Gas flow modeling for focused ion beam (FIB) repair processes, 0000 (6 December 2004); doi: 10.1117/12.570268
Proc. SPIE 5567, AAPSM repair utilizing transparent etch stop layer, 0000 (6 December 2004); doi: 10.1117/12.566596
Proc. SPIE 5567, Focused ion beam repair of binary chrome defects for the 65-nm node, 0000 (6 December 2004); doi: 10.1117/12.578098
Cleaning
Proc. SPIE 5567, ArF lithography reticle crystal growth contributing factors, 0000 (6 December 2004); doi: 10.1117/12.569272
Proc. SPIE 5567, Advanced photomask cleaning, 0000 (6 December 2004); doi: 10.1117/12.570013
Proc. SPIE 5567, Pellicle choice for 193-nm immersion lithography photomasks, 0000 (6 December 2004); doi: 10.1117/12.569280
Proc. SPIE 5567, Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions, 0000 (6 December 2004); doi: 10.1117/12.569015
Maskless Lithography
Proc. SPIE 5567, Phase-shifting optical maskless lithography enabling ASICs at the 65- and 45-nm nodes, 0000 (6 December 2004); doi: 10.1117/12.569258
Proc. SPIE 5567, Maskless lithography with the solid immersion lens nanoprobes, 0000 (6 December 2004); doi: 10.1117/12.569328
Proc. SPIE 5567, Rasterizing for SLM-based mask making and maskless lithography, 0000 (6 December 2004); doi: 10.1117/12.569277
Proc. SPIE 5567, E-beam lithography experimental results and simulation for the 45-nm node, 0000 (6 December 2004); doi: 10.1117/12.570022
Strong Phase Shift
Proc. SPIE 5567, Development of a complementary phase-shift mask process for 90-nm node technology, 0000 (6 December 2004); doi: 10.1117/12.569311
Proc. SPIE 5567, Printability of topography in alternating aperture phase-shift masks, 0000 (6 December 2004); doi: 10.1117/12.568699