PROCEEDINGS VOLUME 5632
PHOTONICS ASIA | 8-11 NOVEMBER 2004
Light-Emitting Diode Materials and Devices
PHOTONICS ASIA
8-11 November 2004
Beijing, China
Materials and Devices I
Proc. SPIE 5632, Device performance and carrier dynamics in blue-mixing host organic light-emitting devices, 0000 (12 January 2005); doi: 10.1117/12.576504
Display Applications I
Proc. SPIE 5632, Progress of AMOLED technology, 0000 (12 January 2005); doi: 10.1117/12.580999
Proc. SPIE 5632, Flexible AMOLED backplane using pentacene TFT, 0000 (12 January 2005); doi: 10.1117/12.579742
Materials and Devices IV
Proc. SPIE 5632, White polymer light-emitting diodes with bilayer structure, 0000 (12 January 2005); doi: 10.1117/12.588294
Proc. SPIE 5632, Voltage reduction of organic light-emitting device (OLED) with an n-type organic material and a silver cathode, 0000 (12 January 2005); doi: 10.1117/12.567637
Materials and Devices II
Proc. SPIE 5632, Iridium complexes and their copolymer with N-vinyl carbazole for OLED use, 0000 (12 January 2005); doi: 10.1117/12.576303
Proc. SPIE 5632, Direct observations of energy transfer and quenching dynamics between Alq3 and C545T in thin films with different doping concentrations, 0000 (12 January 2005); doi: 10.1117/12.569002
Proc. SPIE 5632, Light-emitting devices based on polymeric/inorganic heterojunction, 0000 (12 January 2005); doi: 10.1117/12.575917
Display Applications I
Proc. SPIE 5632, Performance simulation of active-matrix OLED displays, 0000 (12 January 2005); doi: 10.1117/12.579310
Materials and Devices III
Proc. SPIE 5632, Electric field-induced quenching of photoluminescence from Ir(PPY)3 doped PVK, 0000 (12 January 2005); doi: 10.1117/12.588295
Inorganic Semiconductor and Display Applications I
Proc. SPIE 5632, Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy, 0000 (12 January 2005); doi: 10.1117/12.570751
Proc. SPIE 5632, Time-integrated and time-resolved photoluminescence in ZnO epitaxial thin films grown onto (100) silicon substrates by MOCVD, 0000 (12 January 2005); doi: 10.1117/12.576360
Proc. SPIE 5632, Quality measurement of cutting and grinding surfaces based on image, 0000 (12 January 2005); doi: 10.1117/12.577041
Inorganic Semiconductor and Display Applications II
Proc. SPIE 5632, Key factors in the design of a LED volumetric 3D display system, 0000 (12 January 2005); doi: 10.1117/12.574165
Proc. SPIE 5632, High-brightness autostereoscopic LCD with parallax backlight, 0000 (12 January 2005); doi: 10.1117/12.573629
Materials and Devices III
Proc. SPIE 5632, Red fluorenes as the efficient host emitter for nondoped red organic light-emitting diodes, 0000 (12 January 2005); doi: 10.1117/12.569483
Poster Session
Proc. SPIE 5632, Data acquirement and remodeling on volumetric 3D emissive display system, 0000 (12 January 2005); doi: 10.1117/12.575468
Proc. SPIE 5632, The research of lamp for the growing of green plants, 0000 (12 January 2005); doi: 10.1117/12.577252
Proc. SPIE 5632, Spectroscopic properties of Er<sup>3+</sup>/Yb<sup>3+</sup> codoped tantalum-phosphate glasses, 0000 (12 January 2005); doi: 10.1117/12.575689
Proc. SPIE 5632, Spectroscopic properties of Er3+ doped lead halotellurite–tungsten glasses, 0000 (12 January 2005); doi: 10.1117/12.575646
Proc. SPIE 5632, A multilayer organic electroluminescent device using an organic dye salt, 0000 (12 January 2005); doi: 10.1117/12.570905
Proc. SPIE 5632, Study on organic light-emitting device with more balanced charge transport, 0000 (12 January 2005); doi: 10.1117/12.576013
Proc. SPIE 5632, Preparation and optical properties of ZnO films by cathodic electrodeposition, 0000 (12 January 2005); doi: 10.1117/12.579123
Proc. SPIE 5632, The preparation and spectrum characteristic of europium-doped titania nanocrystals, 0000 (12 January 2005); doi: 10.1117/12.574164
Proc. SPIE 5632, Study of photoluminescence property of porous silicon treated by acid, 0000 (12 January 2005); doi: 10.1117/12.573340
Proc. SPIE 5632, Study of Nd-implanted Si-based emitting film materials, 0000 (12 January 2005); doi: 10.1117/12.573316
Proc. SPIE 5632, Characterization of Mg-doped near-stoichiometric LiNbO3 crystal grown from Li-rich melt, 0000 (12 January 2005); doi: 10.1117/12.573288
Proc. SPIE 5632, Fabrication of crystalline &#946;-BaB2O4 thin films for nonlinear optical applications by liquid phase epitaxy, 0000 (12 January 2005); doi: 10.1117/12.573465
Proc. SPIE 5632, Fabrication and properties for white LED with InGaN SQW, 0000 (12 January 2005); doi: 10.1117/12.570640
Proc. SPIE 5632, A super-twisted nematic liquid crystal device based upon in-plane switching, 0000 (12 January 2005); doi: 10.1117/12.570594
Proc. SPIE 5632, Annealing and concentration effects on the photoluminescence and absorption of optically-thin conjugated polymer films and photonic wells, 0000 (12 January 2005); doi: 10.1117/12.570323
Proc. SPIE 5632, Investigation on light-emitting behaviors from ladder-type poly(p-phenylene) with carbon nanotubes, 0000 (12 January 2005); doi: 10.1117/12.570776
Proc. SPIE 5632, Field electron emitters from carbon nanotube films on diamond films, 0000 (12 January 2005); doi: 10.1117/12.570761
Proc. SPIE 5632, The study of optical feature point imaging gray value automation control method with movement, 0000 (12 January 2005); doi: 10.1117/12.576018
Proc. SPIE 5632, Long-lasting phosphorescence in rare earth doped CaO-MgO-B2O3-SiO2 glass, 0000 (12 January 2005); doi: 10.1117/12.575879
Proc. SPIE 5632, The influence of Nd3+ in CaAl2O4:Eu2+,Nd3+ phosphor fabricated by combustion synthesis, 0000 (12 January 2005); doi: 10.1117/12.575871
Proc. SPIE 5632, Electrostatic self-assembly and characterization of poly(p-phenylene vinylene)/CdS nanocomposite films, 0000 (12 January 2005); doi: 10.1117/12.574533
Proc. SPIE 5632, Optical simulation of top-emission organic light-emitting devices with passivation layer, 0000 (12 January 2005); doi: 10.1117/12.581396
Proc. SPIE 5632, Electrical and optical properties of screen-printed electroluminescent structures, 0000 (12 January 2005); doi: 10.1117/12.581266
Proc. SPIE 5632, Organic integrated circuits based on pentacene TFTs using PVP gate insulator, 0000 (12 January 2005); doi: 10.1117/12.579730
Proc. SPIE 5632, Analysis of current driving capability of pentacene TFTs for OLEDs, 0000 (12 January 2005); doi: 10.1117/12.579750
Proc. SPIE 5632, The synthesis of fine crystalline structure of Alq3 derivatives and purification method, 0000 (12 January 2005); doi: 10.1117/12.583561
Materials and Devices I
Proc. SPIE 5632, Novel efficient blue light-emitting conjugated polymers: synthesis, optical properties, and thermal optical stability, 0000 (12 January 2005); doi: 10.1117/12.593238
Materials and Devices II
Proc. SPIE 5632, Blue/white organic light-emitting diodes and passive matrix display, 0000 (12 January 2005); doi: 10.1117/12.593240
Materials and Devices IV
Proc. SPIE 5632, Decay mechanisms of passive matrix organic light-emitting diode display, 0000 (12 January 2005); doi: 10.1117/12.593241
Materials and Devices III
Proc. SPIE 5632, Efficient organic light-emitting diodes with Teflon as buffer layer, 0000 (12 January 2005); doi: 10.1117/12.600896
Proc. SPIE 5632, Dendron-functionalized perylenes for red luminescent materials, 0000 (12 January 2005); doi: 10.1117/12.600899
Poster Session
Proc. SPIE 5632, Bisindolylmaleimides derivatives for effective EL materials, 0000 (12 January 2005); doi: 10.1117/12.600901
Inorganic Semiconductor and Display Applications I
Proc. SPIE 5632, Large laser projection displays utilizing all-solid-state RGB lasers, 0000 (12 January 2005); doi: 10.1117/12.604542
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