INTEGRATED OPTOELECTRONIC DEVICES 2005
22-27 January 2005
San Jose, California, United States
Carbon Nanotubes I
Proc. SPIE 5732, Single carbon nanotube photonics, 0000 (25 March 2005); doi: 10.1117/12.582685
Proc. SPIE 5732, Self-aligned 40-nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70 mV/decade, 0000 (25 March 2005); doi: 10.1117/12.584212
Carbon Nanotubes II
Proc. SPIE 5732, One-dimensional shell-filling and single spin polarization in carbon nanotube quantum dots, 0000 (25 March 2005); doi: 10.1117/12.580039
Proc. SPIE 5732, Fabrication and characterization of carbon nanotube FETs, 0000 (25 March 2005); doi: 10.1117/12.580040
Proc. SPIE 5732, Carbon nanotube technologies for future ULSI via interconnects, 0000 (25 March 2005); doi: 10.1117/12.580083
Carbon Nanotubes III
Proc. SPIE 5732, Carbon nanotubes and their potential field emission applications, 0000 (25 March 2005); doi: 10.1117/12.583352
Proc. SPIE 5732, Lateral alumina templates for carbon nanotubes and semiconductor nanowires synthesis, 0000 (25 March 2005); doi: 10.1117/12.583350
Carbon Nanotubes IV
Proc. SPIE 5732, Periodic nanometric superstructures for photonic applications, 0000 (25 March 2005); doi: 10.1117/12.582776
Proc. SPIE 5732, Growth of carbon nanotubes by sublimation of silicon carbide substrates, 0000 (25 March 2005); doi: 10.1117/12.590456
Proc. SPIE 5732, Aligned/micropatterned carbon nanotube arrays: surface functionalization and electrochemical sensing, 0000 (25 March 2005); doi: 10.1117/12.596907
Laser-Photoacoustic Spectroscopy (L-PAS) I
Proc. SPIE 5732, High-sensitivity high-selectivity detection of CWAs and TICs using tunable laser photoacoustic spectroscopy, 0000 (25 March 2005); doi: 10.1117/12.582680
Proc. SPIE 5732, Optimized capacitive MEMS microphone for photoacoustic spectroscopy (PAS) applications, 0000 (25 March 2005); doi: 10.1117/12.597136
Laser-Photoacoustic Spectroscopy (L-PAS) III
Proc. SPIE 5732, High-power CW mid-IR quantum cascade lasers, 0000 (25 March 2005); doi: 10.1117/12.597072
Proc. SPIE 5732, GaSb-based lasers for spectra region 2-4 µm: challenges and limitations, 0000 (25 March 2005); doi: 10.1117/12.584729
Laser-Photoacoustic Spectroscopy (L-PAS) II
Proc. SPIE 5732, In-situ and stand-off sensing using QC/IC laser technology from 3-100 microns, 0000 (25 March 2005); doi: 10.1117/12.598279
Proc. SPIE 5732, Challenges in infrared remote sensing, 0000 (25 March 2005); doi: 10.1117/12.598281
Keynote Presentation
Proc. SPIE 5732, Integrated detection of nanomagnetic bioassay labels, 0000 (25 March 2005); doi: 10.1117/12.582682
Proc. SPIE 5732, Spin dependent transport properties in spin-LEDs: a survey, 0000 (25 March 2005); doi: 10.1117/12.582683
Meta Materials
Proc. SPIE 5732, Infrared spectroscopy and ellipsometry of magnetic metamaterials, 0000 (25 March 2005); doi: 10.1117/12.581787
Proc. SPIE 5732, New opportunities in magnetic metamaterials, 0000 (25 March 2005); doi: 10.1117/12.582703
Infrared Detectors and FPAs I
Proc. SPIE 5732, New infrared sensors for ballistic missile defense, 0000 (25 March 2005); doi: 10.1117/12.583351
Proc. SPIE 5732, Peeling the onion: an heuristic overview of hit-to-kill missile defense in the 21st century, 0000 (25 March 2005); doi: 10.1117/12.583369
Infrared Detectors and FPAs II
Proc. SPIE 5732, W-structured type-II superlattice-based long- and very long wavelength infrared photodiodes, 0000 (25 March 2005); doi: 10.1117/12.597134
Proc. SPIE 5732, MOCVD HgCdTe heterostructures for uncooled infrared photodetectors, 0000 (25 March 2005); doi: 10.1117/12.593337
Proc. SPIE 5732, Type-II superlattice materials for mid-infrared detection, 0000 (25 March 2005); doi: 10.1117/12.597076
Infrared Detectors and FPAs III
Proc. SPIE 5732, Megapixel QWIP focal plane array and 320x256 pixel colocated mid-wave and long-wave dual-band QWIP focal plane array, 0000 (25 March 2005); doi: 10.1117/12.586043
Proc. SPIE 5732, Passivation of type II InAs/GaSb superlattice photodetectors, 0000 (25 March 2005); doi: 10.1117/12.597140
Proc. SPIE 5732, High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization, 0000 (25 March 2005); doi: 10.1117/12.597208
Proc. SPIE 5732, High performance LWIR type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays, 0000 (25 March 2005); doi: 10.1117/12.597141
Proc. SPIE 5732, Nanoscale heterostructure InGaAs MSM photodetectors, 0000 (25 March 2005); doi: 10.1117/12.587809
Proc. SPIE 5732, High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD, 0000 (25 March 2005); doi: 10.1117/12.597139
Quantum Dots
Proc. SPIE 5732, GaInAs/InP nanopillar arrays for long wavelength infrared detection, 0000 (25 March 2005); doi: 10.1117/12.597073
Wide Bandgap Materials, Devices, and Characteristics
Proc. SPIE 5732, High-performance solar-blind AlGaN photodetectors, 0000 (25 March 2005); doi: 10.1117/12.582491
Deep Ultraviolet Optoelectronics
Proc. SPIE 5732, Back-illuminated solar-blind photodetectors for imaging applications, 0000 (25 March 2005); doi: 10.1117/12.597077
Proc. SPIE 5732, Nitride LEDs based on flat and wrinkled quantum wells, 0000 (25 March 2005); doi: 10.1117/12.588360
Proc. SPIE 5732, AlGaN-based deep UV light emitting diodes with peak emission below 255 nm, 0000 (25 March 2005); doi: 10.1117/12.597078
Wide Bandgap Materials, Devices, and Characteristics
Proc. SPIE 5732, Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices, 0000 (25 March 2005); doi: 10.1117/12.582980
Deep Ultraviolet Optoelectronics
Proc. SPIE 5732, Fundamental studies of nanoscale phenomena in ultraviolet photonic materials and devices, 0000 (25 March 2005); doi: 10.1117/12.588010
Wide Bandgap Materials, Devices, and Characteristics
Proc. SPIE 5732, Properties of self-assembled ZnO nanoparticles in poly(styrene-acrylic acid) diblock copolymers — [PS]m/[PAA]n — on large area Si wafers, 0000 (25 March 2005); doi: 10.1117/12.582681
Proc. SPIE 5732, ZnO thin film templates for GaN-based devices, 0000 (25 March 2005); doi: 10.1117/12.596912
Photonic Crystals
Proc. SPIE 5732, Fabrication of nonlinear photonic crystals and their applications, 0000 (25 March 2005); doi: 10.1117/12.596626
Proc. SPIE 5732, Fabrication of III-V/polymer optical nanowires and nanogratings for nanophotonic devices, 0000 (25 March 2005); doi: 10.1117/12.590418
Spin Sensing
Proc. SPIE 5732, On the current-driven magnetization dynamics, 0000 (25 March 2005); doi: 10.1117/12.588709
Proc. SPIE 5732, From spin diffusion to magnetization reversal: the four-channel approach, 0000 (25 March 2005); doi: 10.1117/12.584744
Nanophotonics
Proc. SPIE 5732, Quasi-3D photonic crystals for nanophotonics, 0000 (25 March 2005); doi: 10.1117/12.583343
Proc. SPIE 5732, Advanced nanostructured optical NbN single-photon detector operated at 2.0 K, 0000 (25 March 2005); doi: 10.1117/12.590455
Nanostructures in Si I
Proc. SPIE 5732, Feasibility of IR-to-UV detection in SiC/SiO2 heterostructures, 0000 (25 March 2005); doi: 10.1117/12.582768
Proc. SPIE 5732, Si- and SiGe- high-k oxide nanostructures for optoelectronic devices, 0000 (25 March 2005); doi: 10.1117/12.582773
Proc. SPIE 5732, The impact of high-k dielectrics in nanocrystal flash memories, 0000 (25 March 2005); doi: 10.1117/12.588362
Nanostructures in Si II
Proc. SPIE 5732, Linear optical response of Si1-xGex compounds, 0000 (25 March 2005); doi: 10.1117/12.591261
Proc. SPIE 5732, Polarization-enhanced optical transmission through plasmonic metal films with high aspect ratio apertures, 0000 (25 March 2005); doi: 10.1117/12.580496
Quantum Dots
Proc. SPIE 5732, Self-assembled SiGe dots, 0000 (25 March 2005); doi: 10.1117/12.573063
Nanostructures in Si II
Proc. SPIE 5732, Nanostructure and morphology modified porous silicon sensors, 0000 (25 March 2005); doi: 10.1117/12.582767
Laser-Photoacoustic Spectroscopy (L-PAS) II
Proc. SPIE 5732, Quantum cascade lasers, systems, and applications in Europe, 0000 (25 March 2005); doi: 10.1117/12.606470
Laser-Photoacoustic Spectroscopy (L-PAS) III
Proc. SPIE 5732, (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality, 0000 (25 March 2005); doi: 10.1117/12.606623