PROCEEDINGS VOLUME 5738
INTEGRATED OPTOELECTRONIC DEVICES 2005 | 22-27 JANUARY 2005
Novel In-Plane Semiconductor Lasers IV
INTEGRATED OPTOELECTRONIC DEVICES 2005
22-27 January 2005
San Jose, California, United States
Mid-IR Lasers I
Proc. SPIE 5738, High-power CW quantum cascade lasers: How short can we go?, 0000 (1 April 2005); doi: 10.1117/12.597095
Proc. SPIE 5738, High-power short-wavelength quantum cascade lasers, 0000 (1 April 2005); doi: 10.1117/12.591738
High Power Lasers I
Proc. SPIE 5738, AlGaInAs/GaAs record high-power conversion efficiency and record high-brightness coolerless 915-nm multimode pumps, 0000 (1 April 2005); doi: 10.1117/12.585337
Proc. SPIE 5738, Very large arrays of individually addressable high-power single-mode laser arrays in the 800- to 1000-nm wavelength range obtained by quantum well intermixing techniques, 0000 (1 April 2005); doi: 10.1117/12.588586
Proc. SPIE 5738, High-power and highly reliable 980-nm lasers with window structure using impurity-free vacancy disordering, 0000 (1 April 2005); doi: 10.1117/12.589962
Proc. SPIE 5738, High-power conversion efficiency Al-free diode lasers for pumping high-power solid-state laser systems, 0000 (1 April 2005); doi: 10.1117/12.597097
Nitride Lasers I
Proc. SPIE 5738, Recent progress of AlInGaN laser diodes, 0000 (1 April 2005); doi: 10.1117/12.597098
Proc. SPIE 5738, Degradation of GaN-based high-power lasers and recent advancements, 0000 (1 April 2005); doi: 10.1117/12.597099
Nonlinear Processes in Quantum Cascade Lasers
Proc. SPIE 5738, Recent progress in nonlinear quantum cascade lasers, 0000 (1 April 2005); doi: 10.1117/12.589510
Proc. SPIE 5738, Quantum cascade Raman laser, 0000 (1 April 2005); doi: 10.1117/12.597101
Proc. SPIE 5738, Theory of intracavity nonlinear processes in quantum cascade lasers, 0000 (1 April 2005); doi: 10.1117/12.597114
Mid-IR Lasers II
Proc. SPIE 5738, Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared, 0000 (1 April 2005); doi: 10.1117/12.597115
Proc. SPIE 5738, GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-µm range, 0000 (1 April 2005); doi: 10.1117/12.597118
Proc. SPIE 5738, Electrically tunable cascaded mid-IR type II light source, 0000 (1 April 2005); doi: 10.1117/12.589638
Proc. SPIE 5738, GaSb-based 1.9- to 2.4-µm quantum well diode lasers with low-beam divergence, 0000 (1 April 2005); doi: 10.1117/12.588203
Terahertz Quantum Cascade Lasers
Proc. SPIE 5738, Advances in THz quantum cascade lasers: fulfilling the application potential, 0000 (1 April 2005); doi: 10.1117/12.597121
Proc. SPIE 5738, Buried heterostructure 2.9-THz quantum cascade lasers operating up to 77K in continuous wave, 0000 (1 April 2005); doi: 10.1117/12.590790
Proc. SPIE 5738, Terahertz quantum cascade lasers with metal-metal waveguides, 0000 (1 April 2005); doi: 10.1117/12.597122
Dilute Nitrides
Proc. SPIE 5738, High-performance GaInNAsSb/GaAs lasers at 1.5 um, 0000 (1 April 2005); doi: 10.1117/12.591447
Proc. SPIE 5738, Characteristics of MOCVD-grown dilute-nitride quantum well lasers, 0000 (1 April 2005); doi: 10.1117/12.597123
Proc. SPIE 5738, InGaAsN/GaAs lasers: high performance and long lifetime, 0000 (1 April 2005); doi: 10.1117/12.586658
Nitride Lasers II
Proc. SPIE 5738, Fabrication of UV devices on various plane substrates, 0000 (1 April 2005); doi: 10.1117/12.597124
Proc. SPIE 5738, Spiral-shaped microdisk lasers, 0000 (1 April 2005); doi: 10.1117/12.597125
Proc. SPIE 5738, Near-field and far-field dynamics of (Al,In)GaN laser diodes, 0000 (1 April 2005); doi: 10.1117/12.591044
Proc. SPIE 5738, Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics, 0000 (1 April 2005); doi: 10.1117/12.590240
Proc. SPIE 5738, InGaN laser diodes by molecular beam epitaxy, 0000 (1 April 2005); doi: 10.1117/12.597027
Grating-Coupled Lasers
Proc. SPIE 5738, Wide-wavelength tuning of sampled grating tunable twin-guide laser diodes, 0000 (1 April 2005); doi: 10.1117/12.590936
Proc. SPIE 5738, Novel tunable DFB lasers with FIB-deposited heaters, 0000 (1 April 2005); doi: 10.1117/12.589430
Proc. SPIE 5738, High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers, 0000 (1 April 2005); doi: 10.1117/12.591827
Novel Devices
Proc. SPIE 5738, Bus-coupled microresonator lasers, 0000 (1 April 2005); doi: 10.1117/12.590836
Proc. SPIE 5738, Microdisk lasers: quantum dot lasing and bistability, 0000 (1 April 2005); doi: 10.1117/12.597126
Proc. SPIE 5738, GaInAsP/InP quantum-wire lasers and distributed reflector lasers with wirelike active regions by lithography and regrowth, 0000 (1 April 2005); doi: 10.1117/12.597127
Quantum Cascade Laser Applications
Proc. SPIE 5738, Atmospheric trace gas measurements using a dual quantum-cascade laser mid-infrared absorption spectrometer, 0000 (1 April 2005); doi: 10.1117/12.597130
Quantum Dot Lasers
Proc. SPIE 5738, Growth and characterization of multiple layer quantum dot lasers, 0000 (1 April 2005); doi: 10.1117/12.593278
Proc. SPIE 5738, Tunneling injection quantum dot lasers, 0000 (1 April 2005); doi: 10.1117/12.588581
Proc. SPIE 5738, 980-nm small-aperture tapered laser (1W CW, M2~3) and tapered arrays (>3W CW): comparison between GaInAs/(Al)GaAs quantum dot and quantum well structures, 0000 (1 April 2005); doi: 10.1117/12.590463
Proc. SPIE 5738, Dynamical properties of quantum dash lasers, 0000 (1 April 2005); doi: 10.1117/12.597132
High Power Lasers II
Proc. SPIE 5738, A compact, narrow-band, and low-noise 800-mW laser source at 980 nm, 0000 (1 April 2005); doi: 10.1117/12.590307
Proc. SPIE 5738, Influence of geometrical factors on angled broad-area semiconductor lasers for high-output power with good beam quality, 0000 (1 April 2005); doi: 10.1117/12.589766
Proc. SPIE 5738, High-power Al-free active region (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications, 0000 (1 April 2005); doi: 10.1117/12.588730
Proc. SPIE 5738, High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm, 0000 (1 April 2005); doi: 10.1117/12.588514
Proc. SPIE 5738, High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm, 0000 (1 April 2005); doi: 10.1117/12.590096
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