PROCEEDINGS VOLUME 5739
INTEGRATED OPTOELECTRONIC DEVICES 2005 | 22-27 JANUARY 2005
Light-Emitting Diodes: Research, Manufacturing, and Applications IX
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
INTEGRATED OPTOELECTRONIC DEVICES 2005
22-27 January 2005
San Jose, California, United States
Growth and LEDs Characterization
Proc. SPIE 5739, Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN, 0000 (7 March 2005); doi: 10.1117/12.602144
Proc. SPIE 5739, Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE, 0000 (7 March 2005); doi: 10.1117/12.591047
Proc. SPIE 5739, Junction temperature in light-emitting diodes assessed by different methods, 0000 (7 March 2005); doi: 10.1117/12.593696
UV, White, and Organic LEDs
Proc. SPIE 5739, Imaging camera system of OYGBR-phosphor-based white LED lighting, 0000 (7 March 2005); doi: 10.1117/12.589901
Proc. SPIE 5739, Effective method for improving illuminating properties of white-light LEDs, 0000 (7 March 2005); doi: 10.1117/12.590294
Proc. SPIE 5739, A unique point OLED source, 0000 (7 March 2005); doi: 10.1117/12.587220
Proc. SPIE 5739, Light-emitting diodes of non-fully conjugated coil-like copolymers for tunable emission and carbon nanotube effect, 0000 (7 March 2005); doi: 10.1117/12.589750
Proc. SPIE 5739, High-resolution polymer LEDs fabricated by drop-on-demand inkjet printing and reactive ion etching, 0000 (7 March 2005); doi: 10.1117/12.590675
III-V Phosphide LEDs
Proc. SPIE 5739, Half-watt high-power single mode superluminescent LED at 1335 nm with single-facet electro-optical efficiency of 28%, 0000 (7 March 2005); doi: 10.1117/12.592043
Proc. SPIE 5739, AlGaInP light-emitting diode with metal reflector structure, 0000 (7 March 2005); doi: 10.1117/12.589947
Proc. SPIE 5739, Light-emitting diodes based on InP quantum dots in GaP(100), 0000 (7 March 2005); doi: 10.1117/12.591299
Proc. SPIE 5739, Efficiency and reliability of AlInGaP LEDs grown on germanium substrates, 0000 (7 March 2005); doi: 10.1117/12.591508
Advanced LED Structure
Proc. SPIE 5739, III-nitride LEDs with photonic crystal structures, 0000 (7 March 2005); doi: 10.1117/12.591218
Proc. SPIE 5739, Method for fabrication of saturated RGB quantum dot light-emitting devices, 0000 (7 March 2005); doi: 10.1117/12.590708
Proc. SPIE 5739, Superluminescent diodes at 1.55 um based on quantum-well and quantum-dot active regions, 0000 (7 March 2005); doi: 10.1117/12.590362
Proc. SPIE 5739, Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off, 0000 (7 March 2005); doi: 10.1117/12.583288
LED Application
Proc. SPIE 5739, High-speed red RCLEDs and VCSELs for plastic optical fiber application, 0000 (7 March 2005); doi: 10.1117/12.589943
Proc. SPIE 5739, Microcavity light emitters and microbolometer detectors for gas monitoring in the 2-5 µm range, 0000 (7 March 2005); doi: 10.1117/12.588584
Proc. SPIE 5739, New measurement technique that uses three near infrared diode lasers for nondestructive evaluation of sugar content in fruits, 0000 (7 March 2005); doi: 10.1117/12.590135
Poster Session
Proc. SPIE 5739, Light-emitting diode of fully conjugated heterocyclic aromatic rigid-rod polymer doped with multi-wall carbon nanotube, 0000 (7 March 2005); doi: 10.1117/12.589757
Proc. SPIE 5739, Cluster configurations of red, green, and blue LEDs for white light illumination, 0000 (7 March 2005); doi: 10.1117/12.593528
Proc. SPIE 5739, Effects of post annealing treatments on the characteristics of ohmic contacts on n-type AlGaN, 0000 (7 March 2005); doi: 10.1117/12.598717
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