MICROLITHOGRAPHY 2005
Feb 27 - Mar 4 2005
San Jose, California, United States
Keynote Papers
Proc. SPIE 5751, Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography, 0000 (6 May 2005); doi: 10.1117/12.600925
Proc. SPIE 5751, Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction, 0000 (6 May 2005); doi: 10.1117/12.601498
Proc. SPIE 5751, Nanoimprint lithography: the path toward high-tech, low-cost devices, 0000 (6 May 2005); doi: 10.1117/12.607236
EUV Systems I
Proc. SPIE 5751, EUV microexposures at the ALS using the 0.3-NA MET projection optics, 0000 (6 May 2005); doi: 10.1117/12.600388
Proc. SPIE 5751, One small step: world's first integrated EUVL process line, 0000 (6 May 2005); doi: 10.1117/12.600259
Proc. SPIE 5751, High-resolution EUV imaging tools for resist exposure and aerial image monitoring, 0000 (6 May 2005); doi: 10.1117/12.606715
Proc. SPIE 5751, Development of the ASML EUV alpha demo tool, 0000 (6 May 2005); doi: 10.1117/12.600725
Proc. SPIE 5751, Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA), 0000 (6 May 2005); doi: 10.1117/12.599435
EUV Optics/Materials
Proc. SPIE 5751, Comparison of EUV interferometry methods in EUVA project, 0000 (6 May 2005); doi: 10.1117/12.600468
Proc. SPIE 5751, Oxidation resistance of Ru-capped EUV multilayers, 0000 (6 May 2005); doi: 10.1117/12.597443
Proc. SPIE 5751, Investigation of plasma-induced erosion of multilayer condenser optics, 0000 (6 May 2005); doi: 10.1117/12.599859
Proc. SPIE 5751, Substrate smoothing for high-temperature condenser operation in EUVL source environments, 0000 (6 May 2005); doi: 10.1117/12.606466
Proc. SPIE 5751, Low thermal expansion substrate material for EUVL components application, 0000 (6 May 2005); doi: 10.1117/12.598392
Advanced Mask Characterization I
Proc. SPIE 5751, Development of low damage mask making process on EUV mask with thin CrN buffer layer, 0000 (6 May 2005); doi: 10.1117/12.598613
Proc. SPIE 5751, Progress towards the development of a commercial tool and process for EUVL mask blanks, 0000 (6 May 2005); doi: 10.1117/12.599936
Proc. SPIE 5751, EUV mask blank readiness for 45-nm HP 2009 manufacturing, 0000 (6 May 2005); doi: 10.1117/12.600544
Proc. SPIE 5751, Recent results on EUV mask blank multilayers and absorbers, 0000 (6 May 2005); doi: 10.1117/12.600538
Nanoimprint I
Proc. SPIE 5751, Simulation of fluid flow in the step and flash imprint lithography process, 0000 (6 May 2005); doi: 10.1117/12.601413
Proc. SPIE 5751, Direct imprinting of dielectric materials for dual damascene processing, 0000 (6 May 2005); doi: 10.1117/12.599977
Proc. SPIE 5751, Development of an etch-definable lift-off process for use with step and flash imprint lithography, 0000 (6 May 2005); doi: 10.1117/12.605932
Proc. SPIE 5751, Step and repeat UV-nanoimprint lithography using a large area stamp, 0000 (6 May 2005); doi: 10.1117/12.598657
EUV Source I
Proc. SPIE 5751, EUV sources for EUV lithography in alpha-, beta-, and high volume chip manufacturing: an update on GDPP and LPP technology, 0000 (6 May 2005); doi: 10.1117/12.599544
Proc. SPIE 5751, EUV source system development update: advancing along the path to HVM, 0000 (6 May 2005); doi: 10.1117/12.601052
Proc. SPIE 5751, Performance of kilowatt-class laser modules in scaling up laser produced plasma (LPP) EUV source, 0000 (6 May 2005); doi: 10.1117/12.598721
Proc. SPIE 5751, High conversion efficiency microscopic tin-doped droplet target laser-plasma source for EUVL, 0000 (6 May 2005); doi: 10.1117/12.596753
EUV Systems II
Proc. SPIE 5751, Characterization of flare on Intel’s EUV MET, 0000 (6 May 2005); doi: 10.1117/12.600154
Proc. SPIE 5751, Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source, 0000 (6 May 2005); doi: 10.1117/12.600620
Proc. SPIE 5751, EUV focus sensor: design and modeling, 0000 (6 May 2005); doi: 10.1117/12.601522
Posters: EUV Systems
Proc. SPIE 5751, Flare and lens aberration requirements for EUV lithographic tools, 0000 (6 May 2005); doi: 10.1117/12.604870
EUV Systems II
Proc. SPIE 5751, Layout compensation for EUV flare, 0000 (6 May 2005); doi: 10.1117/12.599999
Maskless Lithography
Proc. SPIE 5751, Zone-plate-array lithography (ZPAL): optical maskless lithography for cost-effective patterning, 0000 (6 May 2005); doi: 10.1117/12.598742
Proc. SPIE 5751, Arrayed microcolumns for high throughput lithography, 0000 (6 May 2005); doi: 10.1117/12.599575
Proc. SPIE 5751, Maskless EUV lithography via optically addressed modulator, 0000 (6 May 2005); doi: 10.1117/12.600008
Proc. SPIE 5751, Proof-of-concept tool development for projection mask-less lithography (PML2), 0000 (6 May 2005); doi: 10.1117/12.600458
Proc. SPIE 5751, Complexity reduction for C4 compression for implementation in maskless lithography datapath, 0000 (6 May 2005); doi: 10.1117/12.602267
Nanoimprint II
Proc. SPIE 5751, Mask fabrication towards sub-10 nm imprint lithography, 0000 (6 May 2005); doi: 10.1117/12.600207
Proc. SPIE 5751, Fabrication of a 3D nano-imprint template with a conformal dry vapor deposited electron beam resist, 0000 (6 May 2005); doi: 10.1117/12.599795
Proc. SPIE 5751, High durable mold fabricated with hot-embossing a sol-gel derived organically modified silicate film, 0000 (6 May 2005); doi: 10.1117/12.602434
Proc. SPIE 5751, Perfluoropolyethers as novel materials for soft lithography, 0000 (6 May 2005); doi: 10.1117/12.598849
Proc. SPIE 5751, Pattern fidelity in nanoimprinted films using CD-SAXS, 0000 (6 May 2005); doi: 10.1117/12.600267
Advanced Mask Characterization II
Proc. SPIE 5751, EUV mask blank activities at LETI: defect detection at 80 nm, 0000 (6 May 2005); doi: 10.1117/12.595040
Proc. SPIE 5751, Comparison of EUV mask architectures by process window analysis, 0000 (6 May 2005); doi: 10.1117/12.599343
Proc. SPIE 5751, Approximation of three dimensional mask effects with two dimensional features, 0000 (6 May 2005); doi: 10.1117/12.600547
Proc. SPIE 5751, A 3D substrate and buried defect simulator for EUV mask blanks, 0000 (6 May 2005); doi: 10.1117/12.599042
Proc. SPIE 5751, Simulation analysis of defect repair methods for EUVL Mo/Si multilayer mask blanks, 0000 (6 May 2005); doi: 10.1117/12.599224
Electron Projection Lithography
Proc. SPIE 5751, The improvement of the overlay accuracy using the reticle distortion correction for EPL technologies, 0000 (6 May 2005); doi: 10.1117/12.599332
Posters: Electron Projection Lithography
Proc. SPIE 5751, Device based evaluation of electron projection lithography, 0000 (6 May 2005); doi: 10.1117/12.598751
Electron Projection Lithography
Proc. SPIE 5751, EPL performance in 65-nm node metallization technology and beyond, 0000 (6 May 2005); doi: 10.1117/12.599257
Proc. SPIE 5751, Preliminary study on systematic optimization of EPL mask infrastructure, 0000 (6 May 2005); doi: 10.1117/12.599533
Novel Lithography Systems
Proc. SPIE 5751, Resist sensitivity and thickness-based beam count optimization for parallel low energy E-beam exposure systems, 0000 (6 May 2005); doi: 10.1117/12.599723
Proc. SPIE 5751, BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography, 0000 (6 May 2005); doi: 10.1117/12.601733
Proc. SPIE 5751, Optimal zone plates for x-ray lithography, 0000 (6 May 2005); doi: 10.1117/12.600591
Proc. SPIE 5751, Ion beam imprinting system, 0000 (6 May 2005); doi: 10.1117/12.598467