Process Control I: OPC/RET
Proc. SPIE 5752, In-line-focus monitoring technique using lens aberration effect, 0000 (10 May 2005); doi: 10.1117/12.598588
Proc. SPIE 5752, Novel methodology of employing scatterometry to assess optical proximity correction test pattern, 0000 (10 May 2005); doi: 10.1117/12.598698
SEM/Scaterometry for Critical Dimension Metrology
Proc. SPIE 5752, Influence of focus variation on linewidth measurements, 0000 (10 May 2005); doi: 10.1117/12.599741
Process Control I: OPC/RET
Proc. SPIE 5752, Wafer current measurement for process monitoring, 0000 (10 May 2005); doi: 10.1117/12.598398
Contributors to Overlay, Causes of Registration Errors
Proc. SPIE 5752, In field overlay uncertainty contributors, 0000 (10 May 2005); doi: 10.1117/12.599397
Proc. SPIE 5752, Performance study of CD mark size for angular scatterometry, 0000 (10 May 2005); doi: 10.1117/12.599188
Proc. SPIE 5752, High-resolution optical metrology, 0000 (10 May 2005); doi: 10.1117/12.606231
Proc. SPIE 5752, Identifying sources of overlay error in FinFET technology, 0000 (10 May 2005); doi: 10.1117/12.598746
Proc. SPIE 5752, Study of segmented overlay mark fidelity based on electrical property of device, 0000 (10 May 2005); doi: 10.1117/12.598654
Proc. SPIE 5752, Abnormal patterning analysis using actual lens and illumination source data, 0000 (10 May 2005); doi: 10.1117/12.599282
SEM/Scaterometry for Critical Dimension Metrology
Proc. SPIE 5752, CD SEM metrology macro CD technology: beyond the average, 0000 (10 May 2005); doi: 10.1117/12.600133
Proc. SPIE 5752, The role of AFM in semiconductor technology development: the 65 nm technology node and beyond, 0000 (10 May 2005); doi: 10.1117/12.602758
Proc. SPIE 5752, 90nm technology contact CD performance characterization via ODP scatterometry, 0000 (10 May 2005); doi: 10.1117/12.600176
Proc. SPIE 5752, AFM measurement of linewidth with sub-nanometer scale precision, 0000 (10 May 2005); doi: 10.1117/12.599442
Optical Metrology
Proc. SPIE 5752, Coordinate transformation method for the solution of inverse problem in 2D and 3D scatterometry, 0000 (10 May 2005); doi: 10.1117/12.599716
Proc. SPIE 5752, Novel inspection technology for half pitch 55 nm and below, 0000 (10 May 2005); doi: 10.1117/12.599178
Proc. SPIE 5752, Improved thin film model for overlay metrology, 0000 (10 May 2005); doi: 10.1117/12.599274
Proc. SPIE 5752, Optical Fourier transform scatterometry for LER and LWR metrology, 0000 (10 May 2005); doi: 10.1117/12.594526
Proc. SPIE 5752, Application of spectroscopic scatterometry method in hole matrices analysis, 0000 (10 May 2005); doi: 10.1117/12.599373
Proc. SPIE 5752, Characterization of gratings by Mueller polarimetry in conical diffraction, 0000 (10 May 2005); doi: 10.1117/12.600537
Poster Session
Proc. SPIE 5752, Usage of profile information obtained with scatterometry, 0000 (10 May 2005); doi: 10.1117/12.600325
Process Control II: OPC/RET
Proc. SPIE 5752, Immersion scatterometry for improved feature resolution and high speed acquisition of resist profiles, 0000 (10 May 2005); doi: 10.1117/12.599135
Proc. SPIE 5752, New comprehensive metrics and methodology for metrology tool fleet matching, 0000 (10 May 2005); doi: 10.1117/12.602330
Proc. SPIE 5752, Metal etcher qualification using angular scatterometry, 0000 (10 May 2005); doi: 10.1117/12.598828
CD Measurement and Reference Systems/Comparisons
Proc. SPIE 5752, Comparison of scatterometry, atomic force microscope, dual beam system, and XSEM to measure etched via depths, 0000 (10 May 2005); doi: 10.1117/12.600737
Proc. SPIE 5752, Specifications, methodologies, and results of evaluation of optical critical dimension scatterometer tools at the 90nm CMOS technology node and beyond, 0000 (10 May 2005); doi: 10.1117/12.600115
Proc. SPIE 5752, CD-AFM reference metrology at NIST and SEMATECH, 0000 (10 May 2005); doi: 10.1117/12.601972
Proc. SPIE 5752, A comprehensive comparison of spectral scatterometry hardware, 0000 (10 May 2005); doi: 10.1117/12.600783
Hardware and Technique Development
Proc. SPIE 5752, Flexible alignment mark design applications using a next generation phase grating alignment system, 0000 (10 May 2005); doi: 10.1117/12.599494
Proc. SPIE 5752, Nano-imaging with compact extreme ultraviolet laser sources, 0000 (10 May 2005); doi: 10.1117/12.601899
Proc. SPIE 5752, Advanced mask metrology enabling characterization of imprint lithography templates, 0000 (10 May 2005); doi: 10.1117/12.603718
Proc. SPIE 5752, Design of an integrated aerial image sensor, 0000 (10 May 2005); doi: 10.1117/12.600284
Proc. SPIE 5752, Cross sectional measurements of dense high aspect ratio patterns using CD-SAXS, 0000 (10 May 2005); doi: 10.1117/12.600290
Proc. SPIE 5752, Precision carbon nanotube tip for critical dimension measurement with atomic force microscope, 0000 (10 May 2005); doi: 10.1117/12.599245
Overlay Tool and Mark Development
Proc. SPIE 5752, Improved CD and overlay metrology using an optical Fourier transform instrument, 0000 (10 May 2005); doi: 10.1117/12.599464
Proc. SPIE 5752, Accurate alignment technique for nanoimprint lithography, 0000 (10 May 2005); doi: 10.1117/12.600342
Proc. SPIE 5752, In-chip overlay measurement by existing bright-field imaging optical tools, 0000 (10 May 2005); doi: 10.1117/12.599054
Proc. SPIE 5752, Overlay mark performance: a simulation study, 0000 (10 May 2005); doi: 10.1117/12.599059
Proc. SPIE 5752, A study of novel overlay targets designs, 0000 (10 May 2005); doi: 10.1117/12.598373
Proc. SPIE 5752, Optimization of geometry of alignment mark using rigorous coupled-wave analysis (RCWA), 0000 (10 May 2005); doi: 10.1117/12.601142
Line-Edge Roughness, SEM Modeling
Proc. SPIE 5752, Unbiased estimation of linewidth roughness, 0000 (10 May 2005); doi: 10.1117/12.599981
Proc. SPIE 5752, The application of critical shape metrology toward CD-SEM measurement accuracy on sub-60nm features, 0000 (10 May 2005); doi: 10.1117/12.601068
Proc. SPIE 5752, Full spectral analysis of line width roughness, 0000 (10 May 2005); doi: 10.1117/12.600185
Proc. SPIE 5752, Application of critical shape metrology to 90nm process, 0000 (10 May 2005); doi: 10.1117/12.599894
Proc. SPIE 5752, Experimental study of contact edge roughness on sub-100 nm various circular shapes, 0000 (10 May 2005); doi: 10.1117/12.597948
Integrated Metrology/Design
Proc. SPIE 5752, Application of scatterometry for evaluation of lithographic process and OPC model generation, 0000 (10 May 2005); doi: 10.1117/12.600183
Proc. SPIE 5752, A new matching engine between design layout and SEM image of semiconductor device, 0000 (10 May 2005); doi: 10.1117/12.602066
Line-Edge Slimming, Critical Dimension
Proc. SPIE 5752, Metrology of deep trench etched memory structures using 3D scatterometry, 0000 (10 May 2005); doi: 10.1117/12.599342
Poster Session
Proc. SPIE 5752, Examination of possible primary mechanisms for 193nm resist shrinkage, 0000 (10 May 2005); doi: 10.1117/12.599934
Line-Edge Slimming, Critical Dimension
Proc. SPIE 5752, Influence of material on process focus budget and process window of 80nm DRAM devices, 0000 (10 May 2005); doi: 10.1117/12.600166
Proc. SPIE 5752, Novel CD-SEM calibration reference patterned by EB cell projection lithography, 0000 (10 May 2005); doi: 10.1117/12.597165
Proc. SPIE 5752, Qualification of an integrated scatterometer for CD measurements of sub-100nm resist structures in a high-volume 300mm DRAM production environment, 0000 (10 May 2005); doi: 10.1117/12.598420
Mask-Related Metrology/Defect Analysis