MICROLITHOGRAPHY 2005
27 February - 4 March 2005
San Jose, California, United States
Invited Session: Future Challenges for Lithographic Materials
Proc. SPIE 5753, Materials for future lithography, 0000 (4 May 2005); doi: 10.1117/12.607235
Materials for Immersion Lithography I
Proc. SPIE 5753, Material design for immersion lithography with high refractive index fluid (HIF), 0000 (4 May 2005); doi: 10.1117/12.599165
Proc. SPIE 5753, Impact of water and top-coats on lithographic performance in 193-nm immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.598532
Proc. SPIE 5753, Water distribution within immersed polymer films, 0000 (4 May 2005); doi: 10.1117/12.599746
Materials for Immersion Lithography II
Proc. SPIE 5753, Study and control of the interfacial mass transfer of resist components in 193-nm immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.600490
Proc. SPIE 5753, Progress toward developing high performance immersion compatible materials and processes, 0000 (4 May 2005); doi: 10.1117/12.601621
Proc. SPIE 5753, Understanding the photoresist surface-liquid interface for ArF immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.601482
Proc. SPIE 5753, Study of barrier coats for application in immersion 193-nm lithography, 0000 (4 May 2005); doi: 10.1117/12.601768
Proc. SPIE 5753, Resist component leaching in 193-nm immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.600782
Proc. SPIE 5753, Resist development status for immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.599485
157-nm/193-nm Materials
Proc. SPIE 5753, Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation, 0000 (4 May 2005); doi: 10.1117/12.598847
Proc. SPIE 5753, A new 193nm resist, 0000 (4 May 2005); doi: 10.1117/12.598342
Proc. SPIE 5753, 193nm single layer photoresists: defeating tradeoffs with a new class of fluoropolymers, 0000 (4 May 2005); doi: 10.1117/12.599700
Proc. SPIE 5753, Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure, 0000 (4 May 2005); doi: 10.1117/12.600327
Proc. SPIE 5753, Development of optically transparent cyclic olefin photoresist binder resins, 0000 (4 May 2005); doi: 10.1117/12.600051
157-nm/193-nm Resist Processing I
Proc. SPIE 5753, In-line chemical shrink process for 70 nm contact hole patterns by the room-temperature electrostatic self-assembly, 0000 (4 May 2005); doi: 10.1117/12.599450
Proc. SPIE 5753, Double exposure for the contact layer of the 65-nm node, 0000 (4 May 2005); doi: 10.1117/12.599651
Proc. SPIE 5753, New shrinkage technology for nano-contact hole formation, 0000 (4 May 2005); doi: 10.1117/12.598592
Proc. SPIE 5753, Impregnation of resist with functional molecules using supercritical fluid: a new approach to resist engineering for advanced lithography, 0000 (4 May 2005); doi: 10.1117/12.597709
Proc. SPIE 5753, A novel contact hole shrink process for the 65-nm-node and beyond, 0000 (4 May 2005); doi: 10.1117/12.599918
Proc. SPIE 5753, Contact hole shrink process with novel chemical shrink materials, 0000 (4 May 2005); doi: 10.1117/12.598960
157-nm/193-nm Resist Processing II
Proc. SPIE 5753, Novel chemical shrinkage material for small contact hole and small space patterning, 0000 (4 May 2005); doi: 10.1117/12.599468
Proc. SPIE 5753, A novel post exposure bake technique to improve CD uniformity over product wafers, 0000 (4 May 2005); doi: 10.1117/12.599192
Proc. SPIE 5753, 0.31k1 ArF lithography for 70-nm DRAM, 0000 (4 May 2005); doi: 10.1117/12.599348
Proc. SPIE 5753, Advanced rinse process alternatives for reduction of photolithography development cycle defects, 0000 (4 May 2005); doi: 10.1117/12.598819
Proc. SPIE 5753, Pattern collapse and line width roughness reduction by surface conditioner solutions for 248-nm lithography, 0000 (4 May 2005); doi: 10.1117/12.600066
Resist Fundamentals I
Proc. SPIE 5753, A new long range proximity effect in chemically amplified photoresist processes: chemical flare, 0000 (4 May 2005); doi: 10.1117/12.598822
Proc. SPIE 5753, Lithographic importance of acid diffusion in chemically amplified resists, 0000 (4 May 2005); doi: 10.1117/12.598677
Proc. SPIE 5753, Resist materials for advanced lithography, 0000 (4 May 2005); doi: 10.1117/12.600777
Proc. SPIE 5753, Interfacial structure of photoresist thin films in developer solutions, 0000 (4 May 2005); doi: 10.1117/12.598956
Proc. SPIE 5753, Dissolution behavior of resist polymers studied using quartz crystal microbalance method, 0000 (4 May 2005); doi: 10.1117/12.599279
Proc. SPIE 5753, Studies of acid diffusion in low Ea chemically amplified photoresists, 0000 (4 May 2005); doi: 10.1117/12.601759
Resist Fundamentals II
Proc. SPIE 5753, The effect of film thickness on the dissolution rate and hydrogen bonding behavior of photoresist polymer thin films, 0000 (4 May 2005); doi: 10.1117/12.600100
Proc. SPIE 5753, Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS), 0000 (4 May 2005); doi: 10.1117/12.600615
Proc. SPIE 5753, Understanding quencher mechanisms by considering photoacid-dissociation equilibrium in chemically amplified resists, 0000 (4 May 2005); doi: 10.1117/12.598949
Proc. SPIE 5753, Using mesoscale simulation to explore photoresist line edge roughness, 0000 (4 May 2005); doi: 10.1117/12.599736
Proc. SPIE 5753, Basic aspects of acid generation processes in chemically amplified resists for electron beam lithography, 0000 (4 May 2005); doi: 10.1117/12.600150
Line-Edge Roughness
Proc. SPIE 5753, The effects of chemical gradients and photoresist composition on lithographically generated line edge roughness, 0000 (4 May 2005); doi: 10.1117/12.599848
Proc. SPIE 5753, Line edge roughness reduction by plasma curing photoresists, 0000 (4 May 2005); doi: 10.1117/12.600043
Proc. SPIE 5753, Origin of LER and its solution, 0000 (4 May 2005); doi: 10.1117/12.599239
Proc. SPIE 5753, Effect of post development process for resist roughness, 0000 (4 May 2005); doi: 10.1117/12.599209
Proc. SPIE 5753, Electron beam direct write process development for sub 45nm CMOS manufacturing, 0000 (4 May 2005); doi: 10.1117/12.601616
ARC/EUV
Proc. SPIE 5753, 193nm dual layer organic BARCs for high NA immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.600736
Proc. SPIE 5753, Hybrid BARC approaches for FEOL and BEOL intergration, 0000 (4 May 2005); doi: 10.1117/12.598765
Proc. SPIE 5753, Organosiloxane based bottom antireflective coating for 193nm lithography, 0000 (4 May 2005); doi: 10.1117/12.600015
Proc. SPIE 5753, EUV resist patterning performance from the Intel microexposure tool (MET), 0000 (4 May 2005); doi: 10.1117/12.600214
Proc. SPIE 5753, Material design and evaluation of nanocomposite resist for next generation lithography, 0000 (4 May 2005); doi: 10.1117/12.597308
Novel Processing
Proc. SPIE 5753, Area selective atomic layer deposition: use of lithographically defined polymer masking layers for the deposition of titanium dioxide, 0000 (4 May 2005); doi: 10.1117/12.598856
Novel Materials/Applications
Proc. SPIE 5753, Novel negative tone photodefinable low dielectric constant hybrid films, 0000 (4 May 2005); doi: 10.1117/12.599989
Novel Processing
Proc. SPIE 5753, 32nm node technology development using interference immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.601012
Proc. SPIE 5753, All i-line lift-off T-gate process and materials, 0000 (4 May 2005); doi: 10.1117/12.602636
Immersion Lithography Materials Challenges
Proc. SPIE 5753, Evaluation of functional properties of imaging materials for water immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.600560
Proc. SPIE 5753, Top antireflective coating process for immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.599280
Proc. SPIE 5753, Anti-bubble topcoat for immersion lithography, 0000 (4 May 2005); doi: 10.1117/12.599643
Proc. SPIE 5753, Amplification of the index of refraction of aqueous immersion fluids by ionic surfactants, 0000 (4 May 2005); doi: 10.1117/12.606105