Invited Session: Key Directions in Optical Microlithography
Proc. SPIE 5754, Thirty years of lithography simulation, 0000 (12 May 2004); doi: 10.1117/12.601590
Proc. SPIE 5754, How to describe polarization influence on imaging, 0000 (12 May 2004); doi: 10.1117/12.599908
Proc. SPIE 5754, Resist blur and line edge roughness, 0000 (12 May 2004); doi: 10.1117/12.607233
Polarization and High NA
Proc. SPIE 5754, Challenges with hyper-NA (NA>1.0) polarized light lithography for sub lambda/4 resolution, 0000 (12 May 2004); doi: 10.1117/12.599913
Proc. SPIE 5754, Hyper-numerical aperture imaging challenges for 193 nm, 0000 (12 May 2004); doi: 10.1117/12.600359
Proc. SPIE 5754, PSM polarimetry: monitoring polarization at 193nm high-NA and immersion with phase shifting masks, 0000 (12 May 2004); doi: 10.1117/12.599058
Proc. SPIE 5754, A high-frame-rate DUV-optimized CCD for simultaneous measurements of illumination intensity, polarization amplitude, and polarization direction for very high NA imaging systems, 0000 (12 May 2004); doi: 10.1117/12.602757
Immersion Lithography I
Proc. SPIE 5754, First microprocessors with immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.598855
Proc. SPIE 5754, Resist profile control in immersion lithography using scatterometry measurements, 0000 (12 May 2004); doi: 10.1117/12.599745
Proc. SPIE 5754, 25 nm immersion lithography at 193 nm wavelength, 0000 (12 May 2004); doi: 10.1117/12.602414
Proc. SPIE 5754, Controlled contamination studies in 193-nm immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.601473
Proc. SPIE 5754, A methodology for the characterization of topography induced immersion bubble defects, 0000 (12 May 2004); doi: 10.1117/12.599329
Low-k1 Process Control and Performance
Proc. SPIE 5754, Matching multiple-feature CD response from exposure tools: analysis of error sources with their impact in low-k1 regime, 0000 (12 May 2004); doi: 10.1117/12.602092
Proc. SPIE 5754, The challenge of high-volume 193-nm semiconductor manufacturing, 0000 (12 May 2004); doi: 10.1117/12.594628
Proc. SPIE 5754, Implementation of KrF 0.29 k1 lithography, 0000 (12 May 2004); doi: 10.1117/12.598610
Proc. SPIE 5754, Optical lithography technologies for 45-nm node CMOS, 0000 (12 May 2004); doi: 10.1117/12.600948
Proc. SPIE 5754, Analysis of precise CD control for 45nm node and beyond, 0000 (12 May 2004); doi: 10.1117/12.600926
Proc. SPIE 5754, Lithography enabling for the 65 nm node gate layer patterning with alternating PSM, 0000 (12 May 2004); doi: 10.1117/12.601606
Immersion Lithography II
Proc. SPIE 5754, Status of 157 nm lithography and prospects for immersion, 0000 (12 May 2004); doi: 10.1117/12.599455
Proc. SPIE 5754, A 157-nm immersion microstepper, 0000 (12 May 2004); doi: 10.1117/12.602585
Proc. SPIE 5754, Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.599792
Proc. SPIE 5754, Experimental investigation of solid immersion lens lithography, 0000 (12 May 2004); doi: 10.1117/12.600065
Image Quality and Characterization
Proc. SPIE 5754, Aberration retrieval for high-NA optical systems using the extended Nijboer-Zernike theory, 0000 (12 May 2004); doi: 10.1117/12.597406
Proc. SPIE 5754, Dynamic laser speckle in optical projection lithography: causes, effects on CDU and LER, and possible remedies, 0000 (12 May 2004); doi: 10.1117/12.597748
Proc. SPIE 5754, Characterization, modeling, and impact of scattered light in low-k1 lithography, 0000 (12 May 2004); doi: 10.1117/12.601188
Proc. SPIE 5754, Measurement technique of nontelecentricity of pupil-fill and its application to 60 nm NAND flash memory patterns, 0000 (12 May 2004); doi: 10.1117/12.598655
Proc. SPIE 5754, A novel focus monitoring method using double side chrome mask, 0000 (12 May 2004); doi: 10.1117/12.600170
Development in RET I
Proc. SPIE 5754, Layout and source dependent transmission tuning, 0000 (12 May 2004); doi: 10.1117/12.601770
Proc. SPIE 5754, Complementary dipole exposure solutions at 0.29 k1, 0000 (12 May 2004); doi: 10.1117/12.600843
Proc. SPIE 5754, Full-chip single exposure vortex mask for contact/via, 0000 (12 May 2004); doi: 10.1117/12.600111
Proc. SPIE 5754, High transmission mask technology for 45nm node imaging, 0000 (12 May 2004); doi: 10.1117/12.601584
Proc. SPIE 5754, Lithography manufacturing implementation for 65 nm and 45 nm nodes with model-based scattering bars using IML technology, 0000 (12 May 2004); doi: 10.1117/12.598589
Proc. SPIE 5754, Era of double exposure in 70 nm node DRAM cell, 0000 (12 May 2004); doi: 10.1117/12.599458
Image and Process Modeling II
Proc. SPIE 5754, Modeling of electromagnetic effects from mask topography at full-chip scale, 0000 (12 May 2004); doi: 10.1117/12.600139
Image and Process Modeling I
Proc. SPIE 5754, Mask and wafer topography effects in immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.599416
Proc. SPIE 5754, The impact of mask topography on CD control, 0000 (12 May 2004); doi: 10.1117/12.601175
Proc. SPIE 5754, Optimized hardware and software for fast full-chip simulation, 0000 (12 May 2004); doi: 10.1117/12.600951
Proc. SPIE 5754, Improved mask and source representations for automatic optimization of lithographic process conditions using a genetic algorithm, 0000 (12 May 2004); doi: 10.1117/12.599410
Developments in RET II
Proc. SPIE 5754, RELAX: resolution enhancement by laser-spectrum adjusted exposure, 0000 (12 May 2004); doi: 10.1117/12.601002
Proc. SPIE 5754, Fabrication of sub 45 nm random patterns through centerline phase-shifting mask (CL-PSM), 0000 (12 May 2004); doi: 10.1117/12.599309
Proc. SPIE 5754, Strong phase-shifting optical maskless lithography for the 65 nm node and beyond, 0000 (12 May 2004); doi: 10.1117/12.601041
Proc. SPIE 5754, Strategies of optical proximity correction dedicated to chromeless phase lithography for 65 and 45 nm node, 0000 (12 May 2004); doi: 10.1117/12.601743
Proc. SPIE 5754, An integrated imaging system for the 45-nm technology node contact holes using polarized OAI, immersion, weak PSM, and negative resists, 0000 (12 May 2004); doi: 10.1117/12.600010
Image and Process Modeling II
Proc. SPIE 5754, Solving inverse problems of optical microlithography, 0000 (12 May 2004); doi: 10.1117/12.600141
Proc. SPIE 5754, The impact of mask topography on binary reticles at the 65nm node, 0000 (12 May 2004); doi: 10.1117/12.601523
Proc. SPIE 5754, Physically based compact models for fast lithography simulation, 0000 (12 May 2004); doi: 10.1117/12.599889
Mask Polarization Effects
Proc. SPIE 5754, Determination of mask-induced polarization effects occurring in hyper NA immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.598641
Proc. SPIE 5754, Mask induced polarization effects at high NA, 0000 (12 May 2004); doi: 10.1117/12.602422
Proc. SPIE 5754, Three-dimensional rigorous simulation of mask-induced polarization, 0000 (12 May 2004); doi: 10.1117/12.597732
Proc. SPIE 5754, Influence of mask induced polarization effects on a pattern printability, 0000 (12 May 2004); doi: 10.1117/12.597438
Proc. SPIE 5754, Investigation of polarization effects on new mask materials, 0000 (12 May 2004); doi: 10.1117/12.599688
Proc. SPIE 5754, Experimental measurements of diffraction for periodic patterns by 193-nm polarized radiation compared to rigorous EMF simulations, 0000 (12 May 2004); doi: 10.1117/12.600098
Advanced Lithographic Materials
Proc. SPIE 5754, High-index materials for 193 nm immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.600109
Proc. SPIE 5754, High refractive index immersion fluids for 193 nm immersion lithography, 0000 (12 May 2004); doi: 10.1117/12.600025
Proc. SPIE 5754, Immersion lithography fluids for high NA 193 nm lithography, 0000 (12 May 2004); doi: 10.1117/12.602533