PROCEEDINGS VOLUME 5834
18TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES AND QUANTUM INFORMATICS 2004 | 10 JANUARY - 10 OCTOBER 2004
18th International Conference on Photoelectronics and Night Vision Devices
18TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES AND QUANTUM INFORMATICS 2004
10 January - 10 October 2004
Moscow, Russian Federation
General Aspects of Photo- and Optoeletronics
Proc. SPIE 5834, InAs/GaInSb superlattices as a promising material system for third generation infrared detectors, 0000 (7 June 2005); doi: 10.1117/12.628637
Proc. SPIE 5834, Electron beam processors over fast processing the information received from matrix multiplexers, 0000 (7 June 2005); doi: 10.1117/12.628638
Proc. SPIE 5834, The estimated value of minimum noise equivalent temperature difference and the effective value of the instantaneous field of view of the thermal imaging devices, 0000 (7 June 2005); doi: 10.1117/12.628639
Proc. SPIE 5834, On the problem of the detection, recognition, and identification of the figure of man by means of the thermal imaging device, 0000 (7 June 2005); doi: 10.1117/12.628643
Proc. SPIE 5834, Experimental investigations of the soldier MWIR and SWIR radiation contrasts, 0000 (7 June 2005); doi: 10.1117/12.628648
Focal Plane Arrays
Proc. SPIE 5834, Results of development and research of the LWIR 4x288 FPA based on MCT photodiodes, 0000 (7 June 2005); doi: 10.1117/12.628651
Proc. SPIE 5834, Fast-operating focal plane array with a 128x128 element format based on InSb with the frame-accurate accumulation and function of a range finder, 0000 (7 June 2005); doi: 10.1117/12.628659
Proc. SPIE 5834, Uncooled microbolometer IR FPA based on sol-gel VOx, 0000 (7 June 2005); doi: 10.1117/12.628663
Proc. SPIE 5834, Perspectives of development of monolithic IR cooled focal plane arrays for composite multispectrum systems of detection in wavelength range from 1.5-5.0 to 8.0-12.0 microns, 0000 (7 June 2005); doi: 10.1117/12.628668
Proc. SPIE 5834, Modeling of characteristics of array photodetecting device in composition with the thermal imaging system, 0000 (7 June 2005); doi: 10.1117/12.628679
Quantum Well and Quantum Dot
Proc. SPIE 5834, Energy spectrum and IR absorption coefficient of quantum dots, 0000 (7 June 2005); doi: 10.1117/12.628680
Photodetectors and Photodetector-Based Devices
Proc. SPIE 5834, The pointing channel on the basis of array photodetecting device for the mobile laser complex, 0000 (7 June 2005); doi: 10.1117/12.628684
Proc. SPIE 5834, Influence of graded p-P heterojunction potential barrier on characteristics of three-dimensional HgCdTe photodiode, 0000 (7 June 2005); doi: 10.1117/12.628689
Proc. SPIE 5834, New trends in developments of CCD arrays, 0000 (7 June 2005); doi: 10.1117/12.628690
Proc. SPIE 5834, Natural 2a type diamond based UV photo sensor for 0.19-0.28 mkm, 0000 (7 June 2005); doi: 10.1117/12.628693
Proc. SPIE 5834, The device for detection of a driving source of heat radiation, 0000 (7 June 2005); doi: 10.1117/12.628755
Proc. SPIE 5834, Thermal radiation detector based on InSb-FeSb eutectics, 0000 (7 June 2005); doi: 10.1117/12.628756
Proc. SPIE 5834, Epitaxial SPRITE-photodetector, 0000 (7 June 2005); doi: 10.1117/12.628869
Proc. SPIE 5834, HgCdTe based PEM detector for middle range of IR spectrum, 0000 (7 June 2005); doi: 10.1117/12.628871
Night Vision Systems
Proc. SPIE 5834, New high-responsivity vibration-resistant pyrovidicons for the spectral range 8-14 micron, 0000 (7 June 2005); doi: 10.1117/12.628872
Proc. SPIE 5834, New photocathodes for UV and IR spectral range for prospective photodetectors, 0000 (7 June 2005); doi: 10.1117/12.628876
Proc. SPIE 5834, Small-sized CRT display for television and thermal imaging cameras, 0000 (7 June 2005); doi: 10.1117/12.628879
Proc. SPIE 5834, Development of GaAs photocathode for image intensifier tube with spectral response extended to lambda=0.36 µm, 0000 (7 June 2005); doi: 10.1117/12.629034
Proc. SPIE 5834, Software and hardware complex for final inspection for image intensifier tubes, 0000 (7 June 2005); doi: 10.1117/12.628883
Proc. SPIE 5834, High science technology of final screen-body assembly (SBA) cleaning of proximately focused image intensifier tubes (I2), 0000 (7 June 2005); doi: 10.1117/12.629035
Proc. SPIE 5834, Image intensifier tube (I2) with 1.06-µm InGaAs-photocathode, 0000 (7 June 2005); doi: 10.1117/12.629036
Proc. SPIE 5834, Quality of surface and underlying glass layer influence on sensitivity of multialkaline photocathodes grown in ultra-high vacuum (UHV) chambers, 0000 (7 June 2005); doi: 10.1117/12.628882
Proc. SPIE 5834, Novel night vision goggles (NVG) based on image intensifiers with twister, 0000 (7 June 2005); doi: 10.1117/12.628884
Proc. SPIE 5834, Science-technical base and technology development of multialkaline photocathode formation in UHV chambers by individual-group method, 0000 (7 June 2005); doi: 10.1117/12.629092
Proc. SPIE 5834, Technology and setup development for thermodiffusion welding of photocathode heteroepitaxial structures (HES) with glass input windows for image intensifier tubes (I2), 0000 (7 June 2005); doi: 10.1117/12.629094
Proc. SPIE 5834, High technology of night vision system with image intensifier manufacture: state and summary of year 2003, 0000 (7 June 2005); doi: 10.1117/12.629095
Proc. SPIE 5834, Quality of microchannel plate working surfaces, 0000 (7 June 2005); doi: 10.1117/12.628886
Proc. SPIE 5834, Vidicons sensitive in the medium infrared spectral region with phototargets based on semiconductor-insulator structures, 0000 (7 June 2005); doi: 10.1117/12.629097
Proc. SPIE 5834, Mathematical modeling of amplification MCP current by methods of the theory of electrical circuits, 0000 (7 June 2005); doi: 10.1117/12.628903
Proc. SPIE 5834, The small pore microchannel plates for night vision devices, 0000 (7 June 2005); doi: 10.1117/12.628907
Photoelectric Phenomena in Photodectectors and Photosensitive Structures
Proc. SPIE 5834, Diffusion length in p-type HgCdTe expitaxial layer determination, 0000 (7 June 2005); doi: 10.1117/12.628908
Proc. SPIE 5834, Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap, 0000 (7 June 2005); doi: 10.1117/12.628909
Proc. SPIE 5834, EBIC characterization of HgCdTe based photoconductive elements, 0000 (7 June 2005); doi: 10.1117/12.629033
Proc. SPIE 5834, Photoelectrical and optical properites of Pb1-xMnxTe(Ga) epitaxial films, 0000 (7 June 2005); doi: 10.1117/12.628669
Proc. SPIE 5834, Epitaxial photosensitive Pb1-xSnxSe(In)/PbSe1-xSx heterojunctions obtained in the ultrahigh vacuum, 0000 (7 June 2005); doi: 10.1117/12.628673
Proc. SPIE 5834, Photoelectric properties of films A2B2C6 deposited from a solution, 0000 (7 June 2005); doi: 10.1117/12.628678
Proc. SPIE 5834, Photoelectric properties of isotype heterojunctions n-InSe<REE>/n-CuInSe2 in visible and near-IR region, 0000 (7 June 2005); doi: 10.1117/12.628683
Proc. SPIE 5834, Photosensitivity of p-Si/n-Cd1-xZnxS heterojunctions in visible and near IR region of spectrum, 0000 (7 June 2005); doi: 10.1117/12.628695
Problems in the Technology of Photoelectronic Materials and Structures
Proc. SPIE 5834, The effect of low-temperature annealing on the electrical and structural properties of epitaxial layers of CMT and MMT, 0000 (7 June 2005); doi: 10.1117/12.628699
Proc. SPIE 5834, Study of nature of lattice vibration variations depending on a spatial distribution of zinc over the depth of CdxHg1-xTe epitaxial layers grown on Cd1-yZnyTe substrates, 0000 (7 June 2005); doi: 10.1117/12.628707
Proc. SPIE 5834, Plasma and chemical treatments of polyimide sacrificial layers in processing of microblolometers, 0000 (7 June 2005); doi: 10.1117/12.628861
Proc. SPIE 5834, Mathematical modelling of the processes of crystal growth in CdZnTe by physical transport in inert gas, 0000 (7 June 2005); doi: 10.1117/12.628868
Proc. SPIE 5834, On the opportunity of an increased degree of stability of parameters and characteristics of IR photoreceivers based on Mo/CdS1-xSex, 0000 (7 June 2005); doi: 10.1117/12.628874
Proc. SPIE 5834, The effect of doping of rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals, 0000 (7 June 2005); doi: 10.1117/12.628875
Methods and Equipment for Measurement of Photodetector Characteristics
Proc. SPIE 5834, Determination of thermal parameters of microbolometers from electrical measurements, 0000 (7 June 2005); doi: 10.1117/12.628888
Proc. SPIE 5834, Influence of ionizing radiation on photodiodes having a thermoelectric cooler and based on indium selenide, 0000 (7 June 2005); doi: 10.1117/12.628904
Proc. SPIE 5834, Simplified figure of merit of the aerial thermal imaging equipment, 0000 (7 June 2005); doi: 10.1117/12.628905
Proc. SPIE 5834, Algorithm for bringing the results of tests of a thermal imaging device to the normalized values of parameters and conditions of sighting at the observation object, 0000 (7 June 2005); doi: 10.1117/12.628906
Proc. SPIE 5834, Marking small-dimension object from afar, 0000 (7 June 2005); doi: 10.1117/12.628910
Proc. SPIE 5834, Multichannel image processing system for thermal supervision systems, 0000 (7 June 2005); doi: 10.1117/12.628911
Proc. SPIE 5834, Digital hardware and software design for infrared sensor image processing, 0000 (7 June 2005); doi: 10.1117/12.628919
Proc. SPIE 5834, Influence of ionized radiation on anisotropy of electric properties of indium selenide, 0000 (7 June 2005); doi: 10.1117/12.628924
Proc. SPIE 5834, Methods of calibration of measuring installations containing an absolute blackbody, 0000 (7 June 2005); doi: 10.1117/12.628925
Proc. SPIE 5834, Methods of measuring relative spectral responsivity of an exemplary detector, 0000 (7 June 2005); doi: 10.1117/12.629004