Photomask Processes and Materials (I)
Proc. SPIE 5853, Requirements for mask technology from the view point of SOC and FLASH memory trends, 0000 (28 June 2005); doi: 10.1117/12.617033
Proc. SPIE 5853, Study of stress birefringence for 193-nm immersion photomasks, 0000 (28 June 2005); doi: 10.1117/12.617034
Proc. SPIE 5853, A study of storage life extension for high performance chemically amplified resist coated blanks, 0000 (28 June 2005); doi: 10.1117/12.617054
Photomask Processes and Materials (II)
Proc. SPIE 5853, High performance FEP-171 resist process in combination with NTAR7 and NTAR5 chrome and the Sigma7300 DUV mask writer, 0000 (28 June 2005); doi: 10.1117/12.617056
Proc. SPIE 5853, Exploring the fundamental limit of CD control: shot noise and CD uniformity improvement through resist thickness, 0000 (28 June 2005); doi: 10.1117/12.617058
Proc. SPIE 5853, Validation of Nu-Flare e-beam emulation software in a simulation environment, 0000 (28 June 2005); doi: 10.1117/12.617060
Proc. SPIE 5853, A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node, 0000 (28 June 2005); doi: 10.1117/12.617065
Proc. SPIE 5853, Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool, 0000 (28 June 2005); doi: 10.1117/12.617070
Cleaning and Quality Assurance (I)
Proc. SPIE 5853, Photomask lifetime issues in ArF lithography, 0000 (28 June 2005); doi: 10.1117/12.617078
Proc. SPIE 5853, Monitoring system of CD error analysis for the 90-nm node mask manufacturing, 0000 (28 June 2005); doi: 10.1117/12.617080
Cleaning and Quality Assurance (II)
Proc. SPIE 5853, Cryogenic aerosol cleaning of photomasks, 0000 (28 June 2005); doi: 10.1117/12.617081
Proc. SPIE 5853, An investigation of a new generation of progressive mask defects on the pattern side of advanced photomasks, 0000 (28 June 2005); doi: 10.1117/12.617083
Poster Session: Photomask Processes and Materials
Proc. SPIE 5853, Resist baking conversion from wafers to mask-substrates, 0000 (28 June 2005); doi: 10.1117/12.617090
Proc. SPIE 5853, Simulation of resist heating effect with e-beam lithography using distributed processing (DP), 0000 (28 June 2005); doi: 10.1117/12.617091
Proc. SPIE 5853, Implementing chemically amplified resist to 10kV raster e-beam process in photomask manufacturing, 0000 (28 June 2005); doi: 10.1117/12.617092
Proc. SPIE 5853, Quartz etch process for alternating aperture phase shift masks (alt-APSM), 0000 (28 June 2005); doi: 10.1117/12.617095
Proc. SPIE 5853, New slit scan developer system for advanced 45-nm mask making, 0000 (28 June 2005); doi: 10.1117/12.617102
Proc. SPIE 5853, Application of a wafer development process to mask making, 0000 (28 June 2005); doi: 10.1117/12.617104
Proc. SPIE 5853, Verification of the modified model of drying process of a polymer liquid film on a flat substrate by experiment, 0000 (28 June 2005); doi: 10.1117/12.617105
Proc. SPIE 5853, Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology, 0000 (28 June 2005); doi: 10.1117/12.617110
Proc. SPIE 5853, Evaluation of e-beam sensitive CARs for advanced mask making, 0000 (28 June 2005); doi: 10.1117/12.617111
Proc. SPIE 5853, Evaluation of the new-type ESPACER adopted for its removal after post-exposure bake process, 0000 (28 June 2005); doi: 10.1117/12.617114
Poster Session: Cleaning and Pelliclization
Proc. SPIE 5853, Novel acid-free cleaning process for mask blanks, 0000 (28 June 2005); doi: 10.1117/12.617115
Proc. SPIE 5853, A study for the control of chemical residuals on photomasks by using a thermal treatment for 65-nm node, 0000 (28 June 2005); doi: 10.1117/12.617117
Proc. SPIE 5853, AUV5500: advanced in situ dry cleaning and metrology process for next generation lithography, 0000 (28 June 2005); doi: 10.1117/12.617119
Proc. SPIE 5853, Investigation of pellicle influence on reticle flatness, 0000 (28 June 2005); doi: 10.1117/12.617120
Poster Session: Quality Assurance
Proc. SPIE 5853, A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low k1 lithography, 0000 (28 June 2005); doi: 10.1117/12.617122
Proc. SPIE 5853, Process monitoring system for instant defect detection and analysis in 65 nm node photomask fabrications, 0000 (28 June 2005); doi: 10.1117/12.617126
Proc. SPIE 5853, Comprehensive reticle handling and storage approach for optimized fab yields, 0000 (28 June 2005); doi: 10.1117/12.617128
Proc. SPIE 5853, Reticle SEM specifications required for lithography simulation, 0000 (28 June 2005); doi: 10.1117/12.617130
Poster Session: Mask Data Preparation and Processing
Proc. SPIE 5853, An economic analysis for optimal distributed computing resources for mask synthesis and tape-out in production environment, 0000 (28 June 2005); doi: 10.1117/12.617132
Proc. SPIE 5853, Pattern based mask process correction: impact on data quality and mask writing time, 0000 (28 June 2005); doi: 10.1117/12.617133
Proc. SPIE 5853, An extension method of metal layer layout in mask data preparation for robust processes, 0000 (28 June 2005); doi: 10.1117/12.617135
Proc. SPIE 5853, Reducing alternating phase shift mask (Alt-PSM) write-time through mask data optimization, 0000 (28 June 2005); doi: 10.1117/12.617136
Proc. SPIE 5853, Contact CD variation check and contact/metal overlay check using a model based full chip verification software tool, 0000 (28 June 2005); doi: 10.1117/12.617139
Proc. SPIE 5853, Model-based full-chip verification for 65nm lithography process development, 0000 (28 June 2005); doi: 10.1117/12.617141
Proc. SPIE 5853, Etch modeling in RET synthesis and verification flow, 0000 (28 June 2005); doi: 10.1117/12.617143
Proc. SPIE 5853, Interaction and balance of mask write time and design RET strategies, 0000 (28 June 2005); doi: 10.1117/12.617146
Proc. SPIE 5853, Effectiveness of mask data process using OASIS format, 0000 (28 June 2005); doi: 10.1117/12.617148
Proc. SPIE 5853, Evaluation of mask data preparation with OASIS and P10, 0000 (28 June 2005); doi: 10.1117/12.617151
Proc. SPIE 5853, Effective IP protection method of mask data using OASIS format, 0000 (28 June 2005); doi: 10.1117/12.617152
Proc. SPIE 5853, Photomask pattern viewer and analyzer: HOTSCOPE, 0000 (28 June 2005); doi: 10.1117/12.617155
Proc. SPIE 5853, Multi-layer masks: manufacturability considerations, 0000 (28 June 2005); doi: 10.1117/12.617158
Poster Session: PSM and OPC Mask
Proc. SPIE 5853, Model-based scattering bars implementation for 65nm and 45nm nodes using IML technology, 0000 (28 June 2005); doi: 10.1117/12.617165
Proc. SPIE 5853, A proposal for the contact hole assist feature printing checker in IML, 0000 (28 June 2005); doi: 10.1117/12.617191
Proc. SPIE 5853, Lithography process related OPC development and verification demonstration on a sub-90nm poly layer, 0000 (28 June 2005); doi: 10.1117/12.617194
Proc. SPIE 5853, Process model quality assessment by sensitivity analysis, 0000 (28 June 2005); doi: 10.1117/12.617197
Proc. SPIE 5853, Flexible sparse and dense OPC algorithms, 0000 (28 June 2005); doi: 10.1117/12.617198
Proc. SPIE 5853, The application of phase grating to CLM technology for the sub-65nm node optical lithography, 0000 (28 June 2005); doi: 10.1117/12.617201
Proc. SPIE 5853, Low K1 post printing using phase shifting mask, 0000 (28 June 2005); doi: 10.1117/12.617202
Proc. SPIE 5853, Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology, 0000 (28 June 2005); doi: 10.1117/12.617205
Proc. SPIE 5853, Photomask etch and profile control of 65nm chromeless phase lithography masks using scanning probe metrology, 0000 (28 June 2005); doi: 10.1117/12.617206
Poster Session: Photomask Related Lithography Technologies