PROCEEDINGS VOLUME 5957
CONGRESS ON OPTICS AND OPTOELECTRONICS | 28 AUGUST - 2 SEPTEMBER 2005
Infrared Photoelectronics
CONGRESS ON OPTICS AND OPTOELECTRONICS
28 August - 2 September 2005
Warsaw, Poland
New Trends in IR Photoelectronics
Superlattice and Nanostructures
Proc. SPIE 5957, InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging, 595707 (29 September 2005); doi: 10.1117/12.627054
Proc. SPIE 5957, Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors, 595708 (29 September 2005); doi: 10.1117/12.622219
Proc. SPIE 5957, Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation, 59570A (30 September 2005); doi: 10.1117/12.623767
Infrared Detectors and Emitters
Proc. SPIE 5957, Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors, 59570B (29 September 2005); doi: 10.1117/12.621885
Proc. SPIE 5957, Si infrared pixelless photonic emitter, 59570D (29 September 2005); doi: 10.1117/12.622104
HgCdTe Detectors
Proc. SPIE 5957, MEMS for tunable multi-spectral infrared sensor arrays, 59570F (29 September 2005); doi: 10.1117/12.627055
Proc. SPIE 5957, V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates, 59570G (29 September 2005); doi: 10.1117/12.622424
Proc. SPIE 5957, 384x288 MCT LWIR FPA, 59570H (29 September 2005); doi: 10.1117/12.625145
Proc. SPIE 5957, Improvements in MOCVD growth of Hg1–xCdxTe heterostructures for uncooled infrared photodetectors, 59570J (29 September 2005); doi: 10.1117/12.625631
Uncooled Infrared Photodetectors
Proc. SPIE 5957, Uncooled infrared photodetectors in Poland, 59570K (29 September 2005); doi: 10.1117/12.625761
Proc. SPIE 5957, Uncooled microbolometer detector: recent developments at Ulis, 59570M (29 September 2005); doi: 10.1117/12.621884
Proc. SPIE 5957, Advanced features of SCD's uncooled detectors, 59570N (29 September 2005); doi: 10.1117/12.621041
Proc. SPIE 5957, Uncooled thermo-mechanical detector array with optical readout, 59570O (29 September 2005); doi: 10.1117/12.624593
Focal Plane Arrays
Proc. SPIE 5957, High-performance IR detectors at SCD present and future, 59570S (29 September 2005); doi: 10.1117/12.623162
Proc. SPIE 5957, InSb focal plane arrays with frame accumulation, 59570T (29 September 2005); doi: 10.1117/12.622103
Proc. SPIE 5957, High resolution staring arrays answering compact MW and LW applications, 59570U (30 September 2005); doi: 10.1117/12.626109
Infrared Technique
Proc. SPIE 5957, Quantum structures for multiband photon detection, 59570W (29 September 2005); doi: 10.1117/12.620635
Proc. SPIE 5957, Infrared spectro-polarimeter, 59570X (30 September 2005); doi: 10.1117/12.623389
Proc. SPIE 5957, p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors, 59570Z (29 September 2005); doi: 10.1117/12.622181
Poster Session
Proc. SPIE 5957, Regularities of the CdxHg1-xTe p-n junction formation by ion milling, 595713 (30 September 2005); doi: 10.1117/12.621069
Proc. SPIE 5957, Photoluminescence study of (Er3+ + Yb3+) doped gallium nitride layers fabricated by magnetron sputtering, 595714 (30 September 2005); doi: 10.1117/12.621366
Proc. SPIE 5957, Type conductivity conversion in MOCVD CdxHg1-xTe/GaAs hetero-structures under ion milling, 595716 (30 September 2005); doi: 10.1117/12.622113
Proc. SPIE 5957, Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe, 595717 (30 September 2005); doi: 10.1117/12.622117
Proc. SPIE 5957, The boron implantation in the graded-band MBE HgCdTe epilayer, 595718 (30 September 2005); doi: 10.1117/12.622158
Proc. SPIE 5957, Researching photoelectric parameters of MCT MBE graded band-gap nanolayers with non-homogeneous composition and level of doping, 595719 (30 September 2005); doi: 10.1117/12.622173
Proc. SPIE 5957, Cooled InAs photodiodes for IR applications, 59571A (30 September 2005); doi: 10.1117/12.622195
Proc. SPIE 5957, Changing of the near surface layer properties of the Hg1-xCdxTe crystals by ion beam milling, 59571B (30 September 2005); doi: 10.1117/12.622539
Proc. SPIE 5957, Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg 0.79 Cd 0.21 Te single crystals, 59571E (30 September 2005); doi: 10.1117/12.622873
Proc. SPIE 5957, Design of low noise preamplifers for characterization of LSCO bolometers, 59571F (30 September 2005); doi: 10.1117/12.622889
Proc. SPIE 5957, Thermooptical excitation in Hg1-xCdxTe alloys subjecting to ultrasonic influence, 59571I (30 September 2005); doi: 10.1117/12.623060
Proc. SPIE 5957, Relaxation of persistent photoconductivity in Ga-doped Cd1-xMnxTe, 59571J (30 September 2005); doi: 10.1117/12.623130
Proc. SPIE 5957, Fiber-coupled quantum-communications receiver based on two NbN superconducting single-photon detectors, 59571K (30 September 2005); doi: 10.1117/12.623158
Proc. SPIE 5957, Temperature dependence of dark current in HgCdTe photodiode arrays, 59571L (30 September 2005); doi: 10.1117/12.623219
Proc. SPIE 5957, Radiation hardness of MCT LWIR arrays, 59571M (30 September 2005); doi: 10.1117/12.623226
Proc. SPIE 5957, Superconductor states of lead nanoinclusions in PbTe semiconductor matrix, 59571N (30 September 2005); doi: 10.1117/12.623228
Proc. SPIE 5957, Uncooled 160x120 microbolometer IR FPA based on sol-gel VOx, 59571R (30 September 2005); doi: 10.1117/12.624670
Proc. SPIE 5957, The growth and Raman scattering studies of TGSP crystal as the room temperature infrared detector, 59571U (30 September 2005); doi: 10.1117/12.625013
Proc. SPIE 5957, Temperature dependent current-voltage characteristics of MWIR HgCdTe photodiodes operated at higher temperatures, 59571X (30 September 2005); doi: 10.1117/12.625793
Hot Topics
Proc. SPIE 5957, Third-generation sensors for night vision, 59571Z (30 September 2005); doi: 10.1117/12.659780
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