SPIE PHOTOMASK TECHNOLOGY
3-7 October 2005
Monterey, California, United States
Invited Session
Proc. SPIE 5992, Mask industry assessment: 2005, 599202 (4 November 2005); doi: 10.1117/12.613333
Inspection I
Proc. SPIE 5992, The detectability of Qz phase defects and its application for 65nm node CPL mask manufacturing, 599205 (4 November 2005); doi: 10.1117/12.632335
Proc. SPIE 5992, Process window impact of progressive mask defects: its inspection and disposition techniques (go/no-go criteria) via a lithographic detector, 599206 (4 November 2005); doi: 10.1117/12.632039
Proc. SPIE 5992, Evaluation and implementation of TeraScan reflected light die-to-database inspection mode for 65nm design node process, 599207 (4 November 2005); doi: 10.1117/12.632108
Proc. SPIE 5992, Generating mask inspection rules for advanced lithography, 599208 (4 November 2005); doi: 10.1117/12.632478
Inspection II
Proc. SPIE 5992, Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication, 599209 (4 November 2005); doi: 10.1117/12.632338
Proc. SPIE 5992, Advanced manufacturing rules check (MRC) for fully-automated assessment of complex reticle designs, 59920A (4 November 2005); doi: 10.1117/12.632743
Proc. SPIE 5992, Improvement in defect classification efficiency by grouping disposition for reticle inspection, 59920B (4 November 2005); doi: 10.1117/12.632095
Proc. SPIE 5992, Advanced reticle inspection challenges and solutions for 65nm node, 59920C (4 November 2005); doi: 10.1117/12.632322
DPI/DFM
Proc. SPIE 5992, Mask design rules (45 nm): time for standardization, 59920D (9 November 2005); doi: 10.1117/12.633180
Proc. SPIE 5992, Impact of photolithography and mask variability on interconnect parasitics, 59920E (4 November 2005); doi: 10.1117/12.632165
Proc. SPIE 5992, DfM requirements and ROI analysis for system-on-chip, 59920F (4 November 2005); doi: 10.1117/12.632358
Proc. SPIE 5992, DFM for manufacturers and designers, 59920G (4 November 2005); doi: 10.1117/12.632369
Proc. SPIE 5992, Tolerable CD variation analyzer using perturbed nominal models demonstrated on altPSM, 59920H (5 November 2005); doi: 10.1117/12.633417
Mask Substrate and Materials
Proc. SPIE 5992, Antireflection solutions for next generation 193-nm binary and phase-shifting masks, 59920I (4 November 2005); doi: 10.1117/12.632113
Proc. SPIE 5992, A films based approach to intensity imbalance correction for 65nm node c:PSM, 59920J (9 November 2005); doi: 10.1117/12.632214
Proc. SPIE 5992, Expanding grayscale capability of direct-write grayscale photomask by using modified Bi/In compositions, 59920K (4 November 2005); doi: 10.1117/12.632245
Resist Process
Proc. SPIE 5992, Post coat delay effects on chemically amplified resists and storage condition impacts, 59920L (5 November 2005); doi: 10.1117/12.631949
Proc. SPIE 5992, Noble development system to achieve defect-free process for 65nm node photomasks, 59920M (9 November 2005); doi: 10.1117/12.633668
Etch
Proc. SPIE 5992, Approaching zero etch bias at Cr etch process, 59920N (4 November 2005); doi: 10.1117/12.631718
Proc. SPIE 5992, A study of Cr to Mosi in situ dry etching process to reduce plasma induced defect, 59920O (5 November 2005); doi: 10.1117/12.631951
Proc. SPIE 5992, 65 nm node photomask etching with zero CD process bias, 59920P (4 November 2005); doi: 10.1117/12.632228
Proc. SPIE 5992, Evaluation of quartz dry etching performance for next generation phase-shift mask applications, 59920Q (5 November 2005); doi: 10.1117/12.632559
Proc. SPIE 5992, Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach, 59920R (5 November 2005); doi: 10.1117/12.632561
Patterning
Proc. SPIE 5992, Mask lithography assessment for 45 nm node technology, 59920S (7 November 2005); doi: 10.1117/12.633550
Proc. SPIE 5992, Gray scaling in high performance optical pattern generators, 59920T (5 November 2005); doi: 10.1117/12.633395
Proc. SPIE 5992, Pattern fidelity performance from next-generation DUV laser lithography on 65nm masks and wafers, 59920U (5 November 2005); doi: 10.1117/12.632227
Proc. SPIE 5992, Production performance of a Sigma7300 DUV mask writer, 59920V (5 November 2005); doi: 10.1117/12.633167
Proc. SPIE 5992, Performance of the ALTA 4700 with variable print strategy and optimized resist process, 59920W (5 November 2005); doi: 10.1117/12.633049
Extreme NA/Immersion
Proc. SPIE 5992, Demonstration of a new mask structure using a bonded hard pellicle, 59920X (5 November 2005); doi: 10.1117/12.631719
Proc. SPIE 5992, A novel strategy of lithography-error-budget optimization for the 65-nm node: mask specifications for hyper-NA imaging, 59920Y (5 November 2005); doi: 10.1117/12.632021
Proc. SPIE 5992, The impact of attenuated phase shift mask topography on hyper-NA lithography, 59920Z (5 November 2005); doi: 10.1117/12.632510
Proc. SPIE 5992, The impact of mask birefringence on hyper-NA (NA>1.0) polarized imaging, 599210 (5 November 2005); doi: 10.1117/12.637483
MDP/MRC
Proc. SPIE 5992, Mask data volume: explosion or damp squib?, 599211 (5 November 2005); doi: 10.1117/12.629369
Proc. SPIE 5992, Reduction of MDP complexity through the application of OASIS based data flow, 599212 (5 November 2005); doi: 10.1117/12.632370
Proc. SPIE 5992, Improved file sizes and cycle times through optimization of GDSII stream, 599213 (5 November 2005); doi: 10.1117/12.631780
Proc. SPIE 5992, Optimized distributed computing environment for mask data preparation, 599214 (5 November 2005); doi: 10.1117/12.632427
Simulation
Proc. SPIE 5992, The photomask technologies in hyper-NA lithography, 599215 (5 November 2005); doi: 10.1117/12.638794
Proc. SPIE 5992, Benchmark of FEM, waveguide, and FDTD algorithms for rigorous mask simulation, 599216 (5 November 2005); doi: 10.1117/12.631696
Proc. SPIE 5992, Simulation-based photomask qualification using i-Virtual Stepper, 599217 (5 November 2005); doi: 10.1117/12.634666
Proc. SPIE 5992, Vectorial effects in subwavelength mask imaging, 599218 (5 November 2005); doi: 10.1117/12.632372
Proc. SPIE 5992, Through-process window resist modelling strategies for the 65 nm node, 599219 (5 November 2005); doi: 10.1117/12.632096
Repair
Proc. SPIE 5992, Impact of DUV exposure on reticle repairs, 59921A (5 November 2005); doi: 10.1117/12.631637
Proc. SPIE 5992, Image enhancement technology to get fine defect image for FIB, 59921C (5 November 2005); doi: 10.1117/12.632027
Proc. SPIE 5992, Integration of photolithographic simulation and a mask repair system into a single concurrent work cell, 59921D (5 November 2005); doi: 10.1117/12.633160
Cleaning
Proc. SPIE 5992, Haze prevention and phase/transmission preservation through cleaning process optimization, 59921E (5 November 2005); doi: 10.1117/12.633170
Proc. SPIE 5992, The surface treatment for prevention of growing defect, 59921F (5 November 2005); doi: 10.1117/12.632044
Proc. SPIE 5992, Advanced mask cleaning techniques for sub-100-nm technology nodes, 59921G (5 November 2005); doi: 10.1117/12.632294
Proc. SPIE 5992, Characterization of photomask surface cleaning with cryogenic aerosol technique, 59921H (5 November 2005); doi: 10.1117/12.632226
Metrology
Proc. SPIE 5992, CD metrology of binary and phase shift masks using scatterometry, 59921I (5 November 2005); doi: 10.1117/12.631971
Proc. SPIE 5992, Mobile metrology for advanced photomask manufacturing, 59921J (5 November 2005); doi: 10.1117/12.632221
Proc. SPIE 5992, Photomask registration specification and its impact on FLASH memory devices, 59921K (5 November 2005); doi: 10.1117/12.632354
Proc. SPIE 5992, Semiconductor pattern analysis with induced polarization, 59921L (5 November 2005); doi: 10.1117/12.632240
Proc. SPIE 5992, Mask pattern quality assurance based on lithography simulation with fine pixel SEM image, 59921M (5 November 2005); doi: 10.1117/12.632611
Advanced RET I
Proc. SPIE 5992, Applying assist features to improve two dimensional feature process robustness, 59921N (5 November 2005); doi: 10.1117/12.629395