PROCEEDINGS VOLUME 6119
INTEGRATED OPTOELECTRONIC DEVICES 2006 | 21-26 JANUARY 2006
Semiconductor Photodetectors III
INTEGRATED OPTOELECTRONIC DEVICES 2006
21-26 January 2006
San Jose, California, United States
Gallium Based Photodetectors
Proc. SPIE 6119, Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays, 611901 (23 February 2006); doi: 10.1117/12.653645
Proc. SPIE 6119, Long wavelength MSM photodetectors fabricated on InGaNAs, 611902 (23 February 2006); doi: 10.1117/12.644166
Proc. SPIE 6119, PIN versus PN homojunctions in GaInAsSb 2.0-2.5 micron mesa photodiodes, 611903 (23 February 2006); doi: 10.1117/12.647109
Proc. SPIE 6119, Processes limiting the performance of InAs/GaSb superlattice mid-infrared PIN mesa photodiodes, 611904 (23 February 2006); doi: 10.1117/12.647230
Proc. SPIE 6119, Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density, 611905 (13 February 2006); doi: 10.1117/12.644422
Geiger Mode and Single Photon Detectors
Proc. SPIE 6119, Development of a solid state photomultiplier based on an array of Geiger mode CMOS avalanche photodiodes, 611906 (23 February 2006); doi: 10.1117/12.644917
Proc. SPIE 6119, Developments in single photon avalanche photodiodes with fast timing resolution, 611907 (23 February 2006); doi: 10.1117/12.648412
Proc. SPIE 6119, Scalable Geiger/APD/PIN multi-channel sensing platform, 611909 (23 February 2006); doi: 10.1117/12.646248
Proc. SPIE 6119, Study of the properties of new SPM detectors, 61190A (23 February 2006); doi: 10.1117/12.645649
Silicon Based Photodetector
Proc. SPIE 6119, Novel black silicon PIN photodiodes, 61190B (23 February 2006); doi: 10.1117/12.644095
Proc. SPIE 6119, Noise performance and temperature coefficients studies for the back-illuminated, thin silicon <i>pin</i> photodiode arrays, 61190C (23 February 2006); doi: 10.1117/12.644958
Proc. SPIE 6119, CID25: radiation hardened color video camera, 61190D (23 February 2006); doi: 10.1117/12.646384
Proc. SPIE 6119, Development of a 300,000-pixel ultrahigh-speed high-sensitivity CCD, 61190E (23 February 2006); doi: 10.1117/12.645371
Special Spectral Region/ Unique Materials/ Architectures
Proc. SPIE 6119, Progress in development on CdZnTe x-ray detector, 61190H (23 February 2006); doi: 10.1117/12.647265
Proc. SPIE 6119, Birefringence of yttrium vanadate single crystals in the middle wavelength infrared, 61190J (23 February 2006); doi: 10.1117/12.651149
Proc. SPIE 6119, Solid state photomultiplier: noise parameters of photodetectors with internal discrete amplification, 61190K (23 February 2006); doi: 10.1117/12.648755
Proc. SPIE 6119, Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic In<sub>x</sub>Ga<sub>1-x</sub>P buffered GaAs substrate, 61190L (23 February 2006); doi: 10.1117/12.645859
Back to Top