PROCEEDINGS VOLUME 6121
INTEGRATED OPTOELECTRONIC DEVICES 2006 | 21-26 JANUARY 2006
Gallium Nitride Materials and Devices
INTEGRATED OPTOELECTRONIC DEVICES 2006
21-26 January 2006
San Jose, California, United States
Special Session Honoring Dr. Gerald L. Witt Air Force Research Lab., Office of Scientific Research, Directorate of Physics and Electronics
Proc. SPIE 6121, TEM studies of laterally overgrown GaN layers grown in polar and non-polar directions, 612101 (3 March 2006); doi: 10.1117/12.659227
Growth and Characterization I
Proc. SPIE 6121, Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition, 612102 (3 March 2006); doi: 10.1117/12.644706
Proc. SPIE 6121, Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method, 612103 (3 March 2006); doi: 10.1117/12.645066
Proc. SPIE 6121, Investigation of the strain distribution of GaN/AlN wurtzite structure material self-organized truncated pyramid shaped quantum dot, 612104 (3 March 2006); doi: 10.1117/12.645163
Proc. SPIE 6121, Quantum-structure dependent excitonic carrier dynamics of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multi-quantum-wells, 612105 (3 March 2006); doi: 10.1117/12.645432
Proc. SPIE 6121, Microscopic emission properties of nonpolar <i>&#945;</i>-plane GaN grown by HVPE, 612106 (3 March 2006); doi: 10.1117/12.645672
Proc. SPIE 6121, Growth of bulk GaN by HVPE on pressure grown seeds, 612107 (3 March 2006); doi: 10.1117/12.645976
Growth and Characterization II
Proc. SPIE 6121, Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths, 612109 (3 March 2006); doi: 10.1117/12.646014
Proc. SPIE 6121, Cathodoluminescence study of GaN and GaN:Si on sapphire, 61210A (3 March 2006); doi: 10.1117/12.646837
Proc. SPIE 6121, Characterization of GaN epitaxial films grown on SiN<sub>x</sub> and TiN<sub>x</sub> porous network templates, 61210B (3 March 2006); doi: 10.1117/12.646858
Proc. SPIE 6121, Structural and optical characterization of wurtzite Al<sub>0.8</sub>In<sub>0.2</sub>N thin films grown by low temperature magnetron sputter epitaxy, 61210C (3 March 2006); doi: 10.1117/12.647294
Proc. SPIE 6121, Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications, 61210D (3 March 2006); doi: 10.1117/12.651122
Proc. SPIE 6121, Synthesis of nanoporous GaN crystalline particles by chemical vapor deposition, 61210E (3 March 2006); doi: 10.1117/12.656389
Proc. SPIE 6121, Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices, 61210F (3 March 2006); doi: 10.1117/12.657894
Proc. SPIE 6121, Studies of electron trapping in III-nitride semiconductors, 61210H (3 March 2006); doi: 10.1117/12.658016
Proc. SPIE 6121, Direction dependent homoepitaxial growth and bandgap of GaN nanowires, 61210I (3 March 2006); doi: 10.1117/12.658050
Proc. SPIE 6121, Conductive atomic force microscopy study of MBE GaN films, 61210J (3 March 2006); doi: 10.1117/12.658045
Growth and Characterization III
Proc. SPIE 6121, Very low dislocation density AlN substrates for device applications, 61210K (3 March 2006); doi: 10.1117/12.658180
Proc. SPIE 6121, Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors, 61210L (3 March 2006); doi: 10.1117/12.659025
Proc. SPIE 6121, Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys, 61210M (3 March 2006); doi: 10.1117/12.644464
Proc. SPIE 6121, Surface spatial profiles of defects in GaN, 61210N (11 February 2006); doi: 10.1117/12.653320
Devices
Proc. SPIE 6121, Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides, 61210O (3 March 2006); doi: 10.1117/12.645176
Proc. SPIE 6121, Etched facet technology for GaN and blue lasers, 61210P (3 March 2006); doi: 10.1117/12.646629
Proc. SPIE 6121, Recovery of GaN surface after reactive ion etching, 61210Q (3 March 2006); doi: 10.1117/12.646856
Proc. SPIE 6121, Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays, 61210R (3 March 2006); doi: 10.1117/12.654793
Proc. SPIE 6121, Ferroelectric PZT/AlGaN/GaN field effect transistors, 61210S (3 March 2006); doi: 10.1117/12.657584
Proc. SPIE 6121, Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates, 61210T (3 March 2006); doi: 10.1117/12.657921
Poster Session
Proc. SPIE 6121, Gd-implanted GaN as a candidate for spin injector, 61210U (3 March 2006); doi: 10.1117/12.646951
Proc. SPIE 6121, High reflectivity and thermal-stability Cr-base reflectors and <i>n</i>-type ohmic contact for GaN-based flip-chip light-emitting diodes, 61210V (3 March 2006); doi: 10.1117/12.646154
Proc. SPIE 6121, Applications of transparent Al-doped ZnO contact on GaN-based power LED, 61210X (3 March 2006); doi: 10.1117/12.647123
Proc. SPIE 6121, Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes, 61210Y (3 March 2006); doi: 10.1117/12.647332
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