PROCEEDINGS VOLUME 6127
INTEGRATED OPTOELECTRONIC DEVICES 2006 | 21-26 JANUARY 2006
Quantum Sensing and Nanophotonic Devices III
INTEGRATED OPTOELECTRONIC DEVICES 2006
21-26 January 2006
San Jose, California, United States
High Power Infrared Laser Diodes I
Proc. SPIE 6127, High power lasers: achievements, challenges, and opportunities, 612701 (28 February 2006); doi: 10.1117/12.666667
Proc. SPIE 6127, Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks, 612702 (10 February 2006); doi: 10.1117/12.640089
Proc. SPIE 6127, High power, continuous-wave, quantum cascade lasers for MWIR and LWIR applications, 612703 (10 February 2006); doi: 10.1117/12.659625
Proc. SPIE 6127, High-power distributed-feedback quantum cascade lasers, 612704 (28 February 2006); doi: 10.1117/12.640087
High Power Infrared Laser Diodes II
Proc. SPIE 6127, Waveguides with uniaxially patterned layers, 612705 (28 February 2006); doi: 10.1117/12.640091
High Power Infrared Laser Diodes III
Proc. SPIE 6127, Pixilated wideband achromatic waveplates fabricated for the mid IR using subwavelength features, 612709 (28 February 2006); doi: 10.1117/12.646803
Proc. SPIE 6127, Cavity ring-down spectroscopy with a pulsed distributed feedback quantum cascade laser, 61270A (28 February 2006); doi: 10.1117/12.644378
High Power Lasers and Applications
Proc. SPIE 6127, High power vertical external cavity surface emitting lasers and their applications, 61270C (28 February 2006); doi: 10.1117/12.660740
Proc. SPIE 6127, High-performance optical modulators based on stepped quantum wells, 61270D (28 February 2006); doi: 10.1117/12.640530
Proc. SPIE 6127, Recent advances in laser diode cutting technology associated to desktop and industrial inkjet printing, 61270E (28 February 2006); doi: 10.1117/12.662146
Nanoelectrophotonics
Proc. SPIE 6127, Nanostructured semiconductors for optoelectronic applications, 61270H (28 February 2006); doi: 10.1117/12.643137
Quantum Dots I
Proc. SPIE 6127, GaN quantum dots: nanophotonics and nanophononics, 61270I (28 February 2006); doi: 10.1117/12.641062
Proc. SPIE 6127, Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane, 61270K (28 February 2006); doi: 10.1117/12.640337
Quantum Dots II
Proc. SPIE 6127, Colloidal quantum dots as optoelectronic elements, 61270L (28 February 2006); doi: 10.1117/12.641067
Proc. SPIE 6127, InAs quantum dot infrared photodetectors on InP by MOCVD, 61270M (28 February 2006); doi: 10.1117/12.659051
Proc. SPIE 6127, InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity, 61270N (28 February 2006); doi: 10.1117/12.659115
Proc. SPIE 6127, Charge carrier transport in barrier “in-macroporous silicon” structures, 61270O (28 February 2006); doi: 10.1117/12.644143
Infrared Detectors and FPAs I
Proc. SPIE 6127, Infrared detectors and lasers operating in the 3-12 um range using band-gap engineered structures with type II band-gap alignment, 61270R (28 February 2006); doi: 10.1117/12.639493
Proc. SPIE 6127, Influence of IR sensor technology on the military and civil defense, 61270S (28 February 2006); doi: 10.1117/12.640529
Infrared Detectors and FPAs II
Proc. SPIE 6127, High quantum efficiency long-wave infrared photodiodes using W- structured type-II superlattices, 61270T (28 February 2006); doi: 10.1117/12.660711
Proc. SPIE 6127, Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes, 61270U (28 February 2006); doi: 10.1117/12.659120
Proc. SPIE 6127, Electrical and optical performance of InAs/GaSb superlattice LWIR detectors, 61270V (28 February 2006); doi: 10.1117/12.639442
Proc. SPIE 6127, Single- and two-color HgTe/CdTe superlattice based infrared detectors, 61270W (28 February 2006); doi: 10.1117/12.640090
Infrared Detectors and FPAs III
Proc. SPIE 6127, SOI diode uncooled infrared focal plane arrays, 61270X (28 February 2006); doi: 10.1117/12.640339
Proc. SPIE 6127, Development of device fabrication process for strained layer superlattice IR detectors, 61270Z (28 February 2006); doi: 10.1117/12.640084
Nanophotonics
Proc. SPIE 6127, Anisotropic magneto-thermopower in 3d ferromagnets, 612711 (28 February 2006); doi: 10.1117/12.660710
Proc. SPIE 6127, Fabrication and integration of micro/nanoscale photonic devices and sensors for application-specific planar optical integrated circuit board, 612712 (28 February 2006); doi: 10.1117/12.640086
Carbon Nanotubes
Proc. SPIE 6127, Precise control of number of carbon nanotube growth by current monitoring, 612713 (28 February 2006); doi: 10.1117/12.647024
Proc. SPIE 6127, Coherent transport of hole and Coulomb blockade phenomenon in long p-type semiconductor carbon nanotube, 612714 (28 February 2006); doi: 10.1117/12.663344
Proc. SPIE 6127, High-sensitive label-free biosensors based on single-walled carbon nanotubes, 612715 (28 February 2006); doi: 10.1117/12.663342
Proc. SPIE 6127, Island size control of carbon nanotube single electron transistor operating at room temperature by AFM electrical manipulation, 612716 (28 February 2006); doi: 10.1117/12.645526
Photonic Crystals
Proc. SPIE 6127, Simultaneous inhibition and redistribution of spontaneous emission in 2D photonic crystal slabs, 612718 (28 February 2006); doi: 10.1117/12.663337
Proc. SPIE 6127, Organic photonic devices utilizing nano-structured materials, 612719 (28 February 2006); doi: 10.1117/12.647837
III-Nitride Nanophotonics
Proc. SPIE 6127, Development of ZnMgCdO-based alloys and heterostructures for optical applications, 61271B (28 February 2006); doi: 10.1117/12.643144
Proc. SPIE 6127, III-nitride deep ultraviolet micro- and nano-photonics, 61271C (28 February 2006); doi: 10.1117/12.641250
Proc. SPIE 6127, Solar-blind avalanche photodiodes, 61271D (28 February 2006); doi: 10.1117/12.660147
Proc. SPIE 6127, High-sensitivity rotation sensing with atom interferometers using Aharonov-Bohm effect, 61271E (28 February 2006); doi: 10.1117/12.646082
Infrared Detectors and Characterization
Proc. SPIE 6127, Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems, 61271F (28 February 2006); doi: 10.1117/12.666668
Proc. SPIE 6127, Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes, 61271H (28 February 2006); doi: 10.1117/12.659118
Proc. SPIE 6127, Short-period superlattices: is thinner better?, 61271I (28 February 2006); doi: 10.1117/12.666593
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