PROCEEDINGS VOLUME 6129
INTEGRATED OPTOELECTRONIC DEVICES 2006 | 21-26 JANUARY 2006
Quantum Dots, Particles, and Nanoclusters III
IN THIS VOLUME

0 Sessions, 17 Papers, 0 Presentations
INTEGRATED OPTOELECTRONIC DEVICES 2006
21-26 January 2006
San Jose, California, United States
Quantum Dot Physics
Proc. SPIE 6129, Anticompetition of laser modes in quantum dot lasers, 612901 (7 February 2006); doi: 10.1117/12.645025
Proc. SPIE 6129, Experimental and theoretical study of multiple cations intermixing in InP-based quantum dot-in-well structure, 612902 (7 February 2006); doi: 10.1117/12.647005
Proc. SPIE 6129, Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers, 612903 (7 February 2006); doi: 10.1117/12.647170
Proc. SPIE 6129, Characteristics of In(Ga)As quantum dot lasers on InP emitting at 1.5μm in continuous wave mode, 612904 (7 February 2006); doi: 10.1117/12.647219
Proc. SPIE 6129, Growth and characterization of InGaN/GaN nanocolumn LED, 612905 (7 February 2006); doi: 10.1117/12.647220
Quantum Dot Devices
Proc. SPIE 6129, Quantum dot photonic crystal detectors, 612906 (7 February 2006); doi: 10.1117/12.641750
Proc. SPIE 6129, Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells, 612907 (7 February 2006); doi: 10.1117/12.644799
Proc. SPIE 6129, Tunnel quantum well-on-dots InGaAs-InAs high-gain medium for laser diodes, 612908 (7 February 2006); doi: 10.1117/12.646844
Proc. SPIE 6129, GaAs-based 1.3 &#956;m quantum dot laser diode with 3-stacked InAs DWELL (dots-in-a-well) structure and Al<sub>0.7</sub>Ga<sub>0.3</sub>As cladding layer, 612909 (7 February 2006); doi: 10.1117/12.646586
Quantum Dot Growth
Proc. SPIE 6129, Self-assembly of heterojunction quantum dots(HeQuaDs), 61290B (7 February 2006); doi: 10.1117/12.647021
Proc. SPIE 6129, Compositional analysis of Si/SiGe quantum dots using STEM and EDX, 61290C (7 February 2006); doi: 10.1117/12.647318
Proc. SPIE 6129, Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition, 61290E (7 February 2006); doi: 10.1117/12.656492
Proc. SPIE 6129, Polarization dependent size of Ge nanoparticle formed by ultrafast laser, 61290F (7 February 2006); doi: 10.1117/12.644519
Proc. SPIE 6129, Size, areal density, and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy, 61290G (7 February 2006); doi: 10.1117/12.644792
Proc. SPIE 6129, Experimental and theoretical investigation of the third-order nonlinearity in CdS quantum dots in a dendrimer matrix, 61290H (7 February 2006); doi: 10.1117/12.645368
Proc. SPIE 6129, One-dimensional photonic crystal for the 1.3-1.5 &#956;m region, 61290J (7 February 2006); doi: 10.1117/12.646921
Quantum Cascade
Proc. SPIE 6129, An electrically driven microcavity single photon source, 61290M (7 February 2006); doi: 10.1117/12.646152
Back to Top