PROCEEDINGS VOLUME 6133
INTEGRATED OPTOELECTRONIC DEVICES 2006 | 21-26 JANUARY 2006
Novel In-Plane Semiconductor Lasers V
INTEGRATED OPTOELECTRONIC DEVICES 2006
21-26 January 2006
San Jose, California, United States
Quantum Cascade Lasers
Proc. SPIE 6133, Room-temperature continuous-wave single-mode quantum cascade lasers, 613301 (22 February 2006); doi: 10.1117/12.645964
Proc. SPIE 6133, InP based QCL in MBE production machine, 613304 (22 February 2006); doi: 10.1117/12.645943
Nitride Lasers I
Proc. SPIE 6133, High-power and wide wavelength range GaN-based laser diodes, 613306 (21 February 2006); doi: 10.1117/12.641460
Proc. SPIE 6133, Defects and Degradation of Nitride-based Laser Diodes, 613308 (22 February 2006); doi: 10.1117/12.643288
Mid-Infrared Lasers I
Proc. SPIE 6133, Mid-IR type-II W and interband cascade lasers emitting high CW powers, 613309 (22 February 2006); doi: 10.1117/12.641477
Proc. SPIE 6133, Broadly Tunable and Multi-Spectral Mid-IR Semiconductor Lasers and Applications, 61330A (22 February 2006); doi: 10.1117/12.641480
High Power Lasers
Proc. SPIE 6133, Highly reliable 75W InGaAs/AlGaAs laser bars with over 70% conversion efficiency, 61330B (22 February 2006); doi: 10.1117/12.644718
Proc. SPIE 6133, Optical system integration and reliability of very large arrays of individually addressable high-power single mode lasers, 61330C (22 February 2006); doi: 10.1117/12.641649
Proc. SPIE 6133, High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%, 61330D (22 February 2006); doi: 10.1117/12.644555
Proc. SPIE 6133, High-power high-brightness tapered lasers with an Al-free active region at 915 nm, 61330E (22 February 2006); doi: 10.1117/12.646379
Proc. SPIE 6133, High power broad area 808 nm DFB lasers for pumping solid state lasers, 61330F (22 February 2006); doi: 10.1117/12.644568
Quantum Dots and Physics
Proc. SPIE 6133, Carrier lifetime and recombination in 1.3 µm P-doped InAs qauntum dot lasers, 61330H (22 February 2006); doi: 10.1117/12.646797
Proc. SPIE 6133, Achieving narrow linewidth low-phase noise external cavity semiconductor lasers through the reduction of 1/f noise, 61330I (24 February 2006); doi: 10.1117/12.646901
Terahertz Quantum Cascade Lasers
Proc. SPIE 6133, Non equilibrium electrons in THz quantum cascade lasers, 61330K (22 February 2006); doi: 10.1117/12.641467
Nitride Lasers II
Proc. SPIE 6133, High power AlInGaN-based blue-violet laser diodes, 61330N (22 February 2006); doi: 10.1117/12.645579
Proc. SPIE 6133, Characteristics of CW violet laser diodes grown by MBE, 61330O (22 February 2006); doi: 10.1117/12.646047
Proc. SPIE 6133, Characteristics of intensity noise in blue-violet InGaN semiconductor lasers, 61330P (22 February 2006); doi: 10.1117/12.645418
Proc. SPIE 6133, Broad-area high-power CW operated InGaN laser diodes, 61330Q (22 February 2006); doi: 10.1117/12.645049
Quantum Dots
Proc. SPIE 6133, 1.3-1.5 µm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance, 61330S (22 February 2006); doi: 10.1117/12.641483
Proc. SPIE 6133, Characterisation of modulation doped quantum dot lasers, 61330T (22 February 2006); doi: 10.1117/12.650682
Proc. SPIE 6133, High performance 1.3µm quantum dot lasers on GaAs and Silicon, 61330U (22 February 2006); doi: 10.1117/12.641472
Silicon Light Emitters and Amplifiers I
Proc. SPIE 6133, Heterogeneous integration of silicon and AlGaInAs for a silicon evanescent laser, 61330W (7 February 2006); doi: 10.1117/12.660735
Nonlinear Quantum Cascade Lasers
Proc. SPIE 6133, Performance benefits of nonlinear quantum cascade sources, 61330Z (22 February 2006); doi: 10.1117/12.641475
Novel Devices and Materials
Proc. SPIE 6133, High-index-contrast ridge waveguide lasers fabricated via oxygen-enhanced wet thermal oxidation, 613312 (22 February 2006); doi: 10.1117/12.647124
Proc. SPIE 6133, Properties of a High T0 1.3µm GaInNAs/GaAs Quantum Well Laser Diode, 613313 (22 February 2006); doi: 10.1117/12.646541
Mid-Infrared Lasers II
Proc. SPIE 6133, High-power diode laser arrays emitting at 2 µm with reduced far-field angle, 613316 (22 February 2006); doi: 10.1117/12.645603
Grating-Stabilized Lasers
Proc. SPIE 6133, 850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth, 613317 (22 February 2006); doi: 10.1117/12.646204
Proc. SPIE 6133, High-Power Al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications, 613318 (22 February 2006); doi: 10.1117/12.644547
Proc. SPIE 6133, High-frequency tuning of high-powered DFB MOPA system with diffraction limited power up to 1.5W, 613319 (22 February 2006); doi: 10.1117/12.646367
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