PROCEEDINGS VOLUME 6151
SPIE 31ST INTERNATIONAL SYMPOSIUM ON ADVANCED LITHOGRAPHY | 19-24 FEBRUARY 2006
Emerging Lithographic Technologies X
Proceedings Volume 6151 is from: Logo
SPIE 31ST INTERNATIONAL SYMPOSIUM ON ADVANCED LITHOGRAPHY
19-24 February 2006
San Jose, California, United States
Keynote Session
Proc. SPIE 6151, A year in the life of immersion lithography at Albany Nanotech, 615101 (22 March 2006); doi: 10.1117/12.663785
EUV Systems I
Proc. SPIE 6151, EUV pellicle development for mask defect control, 615104 (22 March 2006); doi: 10.1117/12.656551
Proc. SPIE 6151, Nikon EUVL development progress summary, 615105 (10 March 2006); doi: 10.1117/12.656243
Proc. SPIE 6151, Schwarzschild-objective-based EUV micro-exposure tool, 615106 (22 March 2006); doi: 10.1117/12.657541
Proc. SPIE 6151, Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools, 615107 (22 March 2006); doi: 10.1117/12.655106
Proc. SPIE 6151, First performance results of the ASML alpha demo tool, 615108 (22 March 2006); doi: 10.1117/12.657348
Advanced Mask I
Proc. SPIE 6151, EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers, 615109 (22 March 2006); doi: 10.1117/12.655540
Proc. SPIE 6151, Demonstration of phase-shift masks for extreme-ultraviolet lithography, 61510A (22 March 2006); doi: 10.1117/12.652212
Proc. SPIE 6151, RIM-13: A high-resolution imaging tool for aerial image monitoring of patterned and blank EUV reticles, 61510B (22 March 2006); doi: 10.1117/12.657556
Proc. SPIE 6151, EUV mask and chuck analysis: simulation and experimentation, 61510C (22 March 2006); doi: 10.1117/12.657154
Proc. SPIE 6151, Modeling methodologies and defect printability maps for buried defects in EUV mask blanks, 61510D (22 March 2006); doi: 10.1117/12.656744
EUV Optics
Proc. SPIE 6151, Visible light point-diffraction interferometer for testing of EUVL optics, 61510E (22 March 2006); doi: 10.1117/12.656275
Proc. SPIE 6151, EUV testing of multilayer mirrors: critical issues, 61510F (23 March 2006); doi: 10.1117/12.656502
Proc. SPIE 6151, Model of Ru surface oxidation for the lifetime scaling of EUVL projection optics mirror, 61510G (23 March 2006); doi: 10.1117/12.655499
Proc. SPIE 6151, Effect of residual gas atmosphere on lifetime of Ru-capped EUVL projection optics mirror, 61510H (23 March 2006); doi: 10.1117/12.656240
Proc. SPIE 6151, Characterization of large off-axis EUV mirrors with high accuracy reflectometry at PTB, 61510I (23 March 2006); doi: 10.1117/12.656246
Nano-Imprint Lithography I
Proc. SPIE 6151, Multi-level step and flash imprint lithography for direct patterning of dielectrics, 61510J (23 March 2006); doi: 10.1117/12.655604
Proc. SPIE 6151, Photonic crystals from step and flash imprint lithography, 61510L (23 March 2006); doi: 10.1117/12.656688
Proc. SPIE 6151, Defect inspection for imprint lithography using a die to database electron beam verification system, 61510M (23 March 2006); doi: 10.1117/12.659457
Proc. SPIE 6151, Characterizing nanoimprint pattern cross-section and fidelity from x-ray reflectivity, 61510N (23 March 2006); doi: 10.1117/12.656826
EUV Source I
Proc. SPIE 6151, Development status of EUV sources for use in Beta-tools and high-volume chip manufacturing tools, 61510O (23 March 2006); doi: 10.1117/12.652989
Proc. SPIE 6151, Application of a high-brightness electrodeless Z-pinch EUV source for metrology, inspection, and resist development, 61510P (23 March 2006); doi: 10.1117/12.655696
Proc. SPIE 6151, Development of CO<sub>2</sub> laser produced Xe plasma EUV light source for microlithography, 61510S (23 March 2006); doi: 10.1117/12.656941
Proc. SPIE 6151, Design and optimization of collectors for extreme ultraviolet lithography, 61510T (23 March 2006); doi: 10.1117/12.656417
EUV Systems II
Proc. SPIE 6151, Defect printability study using EUV lithography, 61510U (23 March 2006); doi: 10.1117/12.656386
Proc. SPIE 6151, EUV lithography simulation for the 32nm node, 61510V (23 March 2006); doi: 10.1117/12.656335
Proc. SPIE 6151, Simulation analysis of printability of scratch and bump defects in EUV lithography, 61510W (23 March 2006); doi: 10.1117/12.657640
Proc. SPIE 6151, EUV imaging with a 13nm tabletop laser reaches sub-38 nm spatial resolution, 61510X (23 March 2006); doi: 10.1117/12.656588
Proc. SPIE 6151, Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists, 61510Y (23 March 2006); doi: 10.1117/12.657005
Maskless
Proc. SPIE 6151, Technology mapping technique for throughput enhancement of character projection equipment, 61510Z (23 March 2006); doi: 10.1117/12.656153
Proc. SPIE 6151, High-sensitivity interferometric schemes for ML2 micromirror calibrations, 615112 (23 March 2006); doi: 10.1117/12.656553
Nano-Imprint Lithography II
Proc. SPIE 6151, Multi-scale modeling of nano-imprint lithography, 615113 (23 March 2006); doi: 10.1117/12.656668
Proc. SPIE 6151, Increasing effective resolution through surface conditioners for 1x imprint templates and photo mask applications beyond 65nm, 615114 (23 March 2006); doi: 10.1117/12.657620
Proc. SPIE 6151, NIL template manufacturing using a variable shaped e-beam writer and a new pCAR, 615115 (23 March 2006); doi: 10.1117/12.656108
Proc. SPIE 6151, The role of stress in nanoimprint lithography, 615116 (23 March 2006); doi: 10.1117/12.656742
Proc. SPIE 6151, Vapor deposited release layers for nanoimprint lithography, 615117 (23 March 2006); doi: 10.1117/12.654658
Advanced Mask II
Proc. SPIE 6151, Phase defect observation using an EUV microscope, 615119 (23 March 2006); doi: 10.1117/12.655430
Proc. SPIE 6151, Novel low thermal expansion material for EUV application, 61511A (23 March 2006); doi: 10.1117/12.655931
Proc. SPIE 6151, Plasma-assisted cleaning by electrostatics (PACE), 61511B (23 March 2006); doi: 10.1117/12.656645
Proc. SPIE 6151, Defect inspection of EUV mask blank using confocal microscopy: simulation and experiment, 61511C (23 March 2006); doi: 10.1117/12.656221
Proc. SPIE 6151, Evaluation of FIB and e-beam repairs for implementation on step and flash imprint lithography templates, 61511D (23 March 2006); doi: 10.1117/12.659529
Proc. SPIE 6151, Building 1x NIL templates: challenges and requirements, 61511E (23 March 2006); doi: 10.1117/12.655887
Electron-Projection Lithography
Proc. SPIE 6151, Resolution improvement of EPL stencil mask using thin membrane, 61511F (23 March 2006); doi: 10.1117/12.655425
Proc. SPIE 6151, Advanced Image Placement Performance for the Current EPL Masks, 61511G (23 March 2006); doi: 10.1117/12.655423
Proc. SPIE 6151, Assessment of electron projection lithography mask membrane image placement accuracy due to fabrication processes, 61511J (23 March 2006); doi: 10.1117/12.657659
Novel Lithography
Proc. SPIE 6151, Micro/nano lithography realized by chemical printing, 61511N (23 March 2006); doi: 10.1117/12.655692
EUV Source II
Proc. SPIE 6151, EUV generation using a droplet of a suspension including tin as a target of a high-efficiency LPP source for high volume production, 61511P (23 March 2006); doi: 10.1117/12.656455
Proc. SPIE 6151, Compact source and beam delivery system for EUV radiation, 61511T (23 March 2006); doi: 10.1117/12.651054
Poster Session Advanced Mask
Proc. SPIE 6151, Characterization of CCD sensor for actinic mask blank inspection, 61511U (23 March 2006); doi: 10.1117/12.655078
Proc. SPIE 6151, Performance and quality analysis of Mo-Si multilayers deposited by ion beam sputtering and magnetron sputtering, 61511V (23 March 2006); doi: 10.1117/12.655563
Proc. SPIE 6151, Phase-shift mask for EUV lithography, 61511W (23 March 2006); doi: 10.1117/12.655583