PROCEEDINGS VOLUME 6152
SPIE 31ST INTERNATIONAL SYMPOSIUM ON ADVANCED LITHOGRAPHY | 19-24 FEBRUARY 2006
Metrology, Inspection, and Process Control for Microlithography XX
Proceedings Volume 6152 is from: Logo
SPIE 31ST INTERNATIONAL SYMPOSIUM ON ADVANCED LITHOGRAPHY
19-24 February 2006
San Jose, California, United States
Keynote Session
Proc. SPIE 6152, Design-driven metrology: a new paradigm for DFM-enabled process characterization and control, extensibility, and limitations, 615201 (24 March 2006); doi: 10.1117/12.659181
Process Development: OPC Model Calibration and Sources of Variation
Proc. SPIE 6152, Model-based calculation of weighting in OPC model calibration, 615202 (24 March 2006); doi: 10.1117/12.656568
Proc. SPIE 6152, Embedded charge investigation: industry concerns and metrology solutions, 615203 (10 March 2006); doi: 10.1117/12.660214
Proc. SPIE 6152, Local CD variation in 65nm node with PSM processes STI topography characterization (I), 615204 (24 March 2006); doi: 10.1117/12.655914
Proc. SPIE 6152, Global pattern density effects on low-k trench CDs for sub-65-nm technology nodes, 615205 (24 March 2006); doi: 10.1117/12.656409
Defect I: Yield and Contact Printing
Proc. SPIE 6152, Defect metrology challenges at 45-nm technology node and beyond, 615207 (24 March 2006); doi: 10.1117/12.664190
Proc. SPIE 6152, Yield enhancement methodologies for 90-nm technology and beyond, 615208 (24 March 2006); doi: 10.1117/12.656616
Proc. SPIE 6152, Toward full-chip prediction of yield-limiting contact patterning failure: correlation of simulated image parameters to advanced contact metrology metrics, 615209 (24 March 2006); doi: 10.1117/12.655192
Proc. SPIE 6152, A systematic study of missing via mechanism and its solutions, 61520A (24 March 2006); doi: 10.1117/12.655471
Proc. SPIE 6152, Advanced DFM applications using design-based metrology on CD SEM, 61520B (27 March 2006); doi: 10.1117/12.674776
Process Control I
Proc. SPIE 6152, Litho-metrology challenges for the 45-nm technology node and beyond, 61520C (24 March 2006); doi: 10.1117/12.659059
Proc. SPIE 6152, In-chip optical CD measurements for non-volatile memory devices, 61520D (24 March 2006); doi: 10.1117/12.650997
Proc. SPIE 6152, Benchmark comparison of multiple process control strategies for lithographic CD control, 61520E (24 March 2006); doi: 10.1117/12.656684
Proc. SPIE 6152, Integrated scatterometry in high-volume manufacturing for polysilicon gate etch control, 61520F (24 March 2006); doi: 10.1117/12.659946
Proc. SPIE 6152, Improved scatterometry method of critical dimension measurements and its application for control of development process, 61520G (24 March 2006); doi: 10.1117/12.657324
Proc. SPIE 6152, Application of optical CD metrology based on both spectroscopic ellipsometry and scatterometry for Si-recess monitor, 61520H (24 March 2006); doi: 10.1117/12.656226
Optical Theory, Limits, and Analysis
Proc. SPIE 6152, Simulations of optical microscope images, 61520I (24 March 2006); doi: 10.1117/12.656370
Proc. SPIE 6152, Scatterfield microscopy using back focal plane imaging with an engineered illumination field, 61520J (24 March 2006); doi: 10.1117/12.656452
Proc. SPIE 6152, Optical critical dimension measurement and illumination analysis using the through-focus focus metric, 61520K (24 March 2006); doi: 10.1117/12.656421
Proc. SPIE 6152, Automatic CD-SEM offline recipe creation for OPC qualification and process monitoring in a DRAM pilot-fab environment, 61520L (24 March 2006); doi: 10.1117/12.654787
Proc. SPIE 6152, Virtual measurements and simulation of interference microscopes, 61520M (24 March 2006); doi: 10.1117/12.656330
Standards, Calibration, and Reference Systems
Proc. SPIE 6152, Characterization of line edge roughness using CD-SAXS, 61520N (24 March 2006); doi: 10.1117/12.656829
Proc. SPIE 6152, Progress on implementation of a CD-AFM-based reference measurement system, 61520O (24 March 2006); doi: 10.1117/12.653287
Proc. SPIE 6152, Traceable atomic force microscope dimensional metrology at NIST, 61520P (24 March 2006); doi: 10.1117/12.656803
Proc. SPIE 6152, Accurate in-line CD metrology for nanometer semiconductor manufacturing, 61520Q (24 March 2006); doi: 10.1117/12.655986
Proc. SPIE 6152, Carbon nanotube probes for three-dimensional critical-dimension metrology, 61520R (24 March 2006); doi: 10.1117/12.656212
CD-SEM I: Improving Capability and LER Metrology
Proc. SPIE 6152, Small feature accuracy challenge for CD-SEM metrology: physical model solution, 61520S (24 March 2006); doi: 10.1117/12.659779
Proc. SPIE 6152, Tools to measure CD-SEM performance, 61520T (24 March 2006); doi: 10.1117/12.650649
Proc. SPIE 6152, Metrology tool fleet management: a comprehensive discussion of requirements and solutions, 61520U (24 March 2006); doi: 10.1117/12.659589
Proc. SPIE 6152, CD-AFM versus CD-SEM for resist LER and LWR measurements, 61520V (24 March 2006); doi: 10.1117/12.659008
Proc. SPIE 6152, Impact of line width roughness on device performance, 61520W (24 March 2006); doi: 10.1117/12.656128
Proc. SPIE 6152, Macro analysis of line edge and line width roughness, 61520X (24 March 2006); doi: 10.1117/12.655516
Proc. SPIE 6152, Characterization of across-device linewidth variation (ADLV) for 65-nm logic SRAM using CDSEM and linewidth roughness algorithms, 61520Y (24 March 2006); doi: 10.1117/12.663446
Overlay
Proc. SPIE 6152, The limits of image-based optical metrology, 61520Z (24 March 2006); doi: 10.1117/12.660289
Proc. SPIE 6152, Multilayer overlay metrology, 615210 (24 March 2006); doi: 10.1117/12.657397
Proc. SPIE 6152, Calibrating optical overlay measurements, 615211 (24 March 2006); doi: 10.1117/12.659597
Proc. SPIE 6152, Metrology tool fleet management: applying FMP tool matching and monitoring concepts to an overlay fleet, 615212 (24 March 2006); doi: 10.1117/12.655578
Proc. SPIE 6152, In-field overlay uncertainty contributors: a back end study, 615213 (24 March 2006); doi: 10.1117/12.656467
Proc. SPIE 6152, In-chip overlay metrology, 615214 (24 March 2006); doi: 10.1117/12.655953
Hardware and Technique Development
Proc. SPIE 6152, Self-interferometric electrical image monitors, 615215 (24 March 2006); doi: 10.1117/12.656745
Proc. SPIE 6152, Three-dimensional metrology with side-wall measurement using tilt-scanning operation in digital probing AFM, 615216 (24 March 2006); doi: 10.1117/12.654346
Proc. SPIE 6152, In-line TEM sample preparation and wafer return strategy for rapid yield learning, 615217 (24 March 2006); doi: 10.1117/12.656410
Proc. SPIE 6152, Novel techniques for in-line acquisition of microstructure profiles, 615218 (24 March 2006); doi: 10.1117/12.656971
Proc. SPIE 6152, Comprehensive approach to MuGFET metrology, 615219 (24 March 2006); doi: 10.1117/12.656076
CD-SEM II: Metrology DFM Tools
Proc. SPIE 6152, Minimizing CD measurement bias through real-time acquisition of 3D feature shapes, 61521A (24 March 2006); doi: 10.1117/12.660233
Proc. SPIE 6152, Automated CD-SEM recipe creation: a new paradigm in CD-SEM utilization, 61521B (24 March 2006); doi: 10.1117/12.659759
Proc. SPIE 6152, Estimation of pattern shape based on CD-SEM image by using MPPC method, 61521D (24 March 2006); doi: 10.1117/12.655987
Proc. SPIE 6152, Enabling DFM and APC strategies with advanced process metrics, 61521E (24 March 2006); doi: 10.1117/12.655894
Proc. SPIE 6152, Evaluation of OPC quality using automated edge placement error measurement with CD-SEM, 61521F (24 March 2006); doi: 10.1117/12.663017
Scatterometry
Proc. SPIE 6152, A comprehensive test of optical scatterometry readiness for 65-nm technology production, 61521G (24 March 2006); doi: 10.1117/12.657649
Proc. SPIE 6152, Decorrelation of fitting parameters by Mueller polarimetry in conical diffraction, 61521H (24 March 2006); doi: 10.1117/12.654834
Proc. SPIE 6152, Dome scatterometry for the measurement of advanced geometry semiconductor devices, 61521I (24 March 2006); doi: 10.1117/12.656466
Proc. SPIE 6152, Influence of semiconductor manufacturing process variation on device parameter measurement for angular scatterometry, 61521J (24 March 2006); doi: 10.1117/12.655995
Mask and Lithography System Metrology
Proc. SPIE 6152, Development of an automated multiple-target mask CD disposition system to enable new sampling strategy, 61521K (24 March 2006); doi: 10.1117/12.654326
Proc. SPIE 6152, Phase calibration for attenuating phase-shift masks, 61521L (24 March 2006); doi: 10.1117/12.655729