Proceedings Volume 6153 is from: Logo
SPIE 31ST INTERNATIONAL SYMPOSIUM ON ADVANCED LITHOGRAPHY
19-24 February 2006
San Jose, California, United States
Plenary Session
Proc. SPIE 6153, Marching to the beat of Moore's Law, 615301 (24 March 2006); doi: 10.1117/12.655176
Invited Session
Proc. SPIE 6153, Self assembly in semiconductor microelectronics: self-aligned sub-lithographic patterning using diblock copolymer thin films, 615302 (13 March 2006); doi: 10.1117/12.659252
Immersion I
Proc. SPIE 6153, Numeric analyses of the roles of gas phase and liquid phase UV photochemistry in conventional and immersion 193 nm lithography, 615303 (29 March 2006); doi: 10.1117/12.656979
Proc. SPIE 6153, Top coat or no top coat for immersion lithography?, 615304 (29 March 2006); doi: 10.1117/12.660158
Proc. SPIE 6153, Evaluation of 193nm immersion resist without topcoat, 615305 (29 March 2006); doi: 10.1117/12.655664
Proc. SPIE 6153, Selection and evaluation of developer-soluble topcoat for 193nm immersion lithography, 615306 (29 March 2006); doi: 10.1117/12.655725
Proc. SPIE 6153, Performance of a dry 193nm resist under wet conditions, 615307 (11 April 2006); doi: 10.1117/12.659392
Immersion II
Proc. SPIE 6153, Materials and process parameters study on ArF immersion defectivity, 615308 (11 April 2006); doi: 10.1117/12.657805
Proc. SPIE 6153, Defect studies of resist process for 193nm immersion lithography, 615309 (11 April 2006); doi: 10.1117/12.656164
Proc. SPIE 6153, High-refractive-index fluids for the next-generation ArF immersion lithography, 61530A (11 April 2006); doi: 10.1117/12.656022
Proc. SPIE 6153, New high-index fluids for immersion lithography, 61530B (29 March 2006); doi: 10.1117/12.656637
Proc. SPIE 6153, Amplification of the index of refraction of aqueous immersion fluids with crown ethers: a progress report, 61530C (29 March 2006); doi: 10.1117/12.659821
Proc. SPIE 6153, Immersion topcoat and resist material improvement study by using immersion scanner, 61530D (11 April 2006); doi: 10.1117/12.655541
Resist Materials
Proc. SPIE 6153, Development of new resist materials for 193-nm dry and immersion lithography, 61530E (29 March 2006); doi: 10.1117/12.656141
Proc. SPIE 6153, Non-ionic photoacid generators for chemically amplified photoresists: structure effect on resist performance, 61530F (29 March 2006); doi: 10.1117/12.655079
Proc. SPIE 6153, Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50-nm resolution capability, 61530G (29 March 2006); doi: 10.1117/12.656112
Proc. SPIE 6153, Synthesis of high refractive index sulfur containing polymers for 193 nm immersion lithography: a progress report, 61530H (29 March 2006); doi: 10.1117/12.659757
Proc. SPIE 6153, Reactivity of model compounds of ArF immersion, ArF, and KrF resists with diphenylsulfinyl radical cation, a cage-escape product of photochemistry of triphenylsulfonium salts, 61530I (11 April 2006); doi: 10.1117/12.655087
Proc. SPIE 6153, All-organic non-PFOS nonionic photoacid generating compounds with functionalized fluoroorganic sulfonate motif for chemically amplified resists, 61530J (29 March 2006); doi: 10.1117/12.656500
ARC/Multilayer Processes
Proc. SPIE 6153, Silicon containing polymer in applications for 193-nm high-NA lithography processes, 61530K (29 March 2006); doi: 10.1117/12.657197
Proc. SPIE 6153, Spin-on hard mask with dual-BARC property for 50-nm devices, 61530L (29 March 2006); doi: 10.1117/12.656075
Proc. SPIE 6153, A novel switchable BARC (SBARC) and process to improve pattern collapse and defect control, 61530M (29 March 2006); doi: 10.1117/12.658416
Proc. SPIE 6153, The effects of etch chemistry on the etch rates of ArF BARC products, 61530N (29 March 2006); doi: 10.1117/12.657128
Proc. SPIE 6153, Two-layer anti-reflection strategies for implant applications, 61530O (11 April 2006); doi: 10.1117/12.656528
Resist Processing
Proc. SPIE 6153, Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations, 61530P (29 March 2006); doi: 10.1117/12.656397
Proc. SPIE 6153, Reactive ion etching of fluorine containing photoresist, 61530Q (29 March 2006); doi: 10.1117/12.656605
Proc. SPIE 6153, Resist process window characterization for the 45-nm node using an interferometric immersion microstepper, 61530R (29 March 2006); doi: 10.1117/12.657578
Proc. SPIE 6153, New 193-nm top antireflective coatings for superior swing reduction, 61530S (29 March 2006); doi: 10.1117/12.656641
Proc. SPIE 6153, A high productivity low defectivity develop process for 193nm lithography, 61530T (29 March 2006); doi: 10.1117/12.656664
Resist Processes and Simulation
Proc. SPIE 6153, Defect marginality screen for resists patterned in random bright-field layout, 61530U (29 March 2006); doi: 10.1117/12.658060
Proc. SPIE 6153, Minimizing wafer defectivity during high-temperature baking of organic films in 193nm lithography, 61530V (29 March 2006); doi: 10.1117/12.656443
Proc. SPIE 6153, Effect of top coat and resist thickness on line edge roughness, 61530W (29 March 2006); doi: 10.1117/12.655925
Proc. SPIE 6153, Mechanistic model of line edge roughness, 61530X (29 March 2006); doi: 10.1117/12.659627
Proc. SPIE 6153, OPC of resist reflow process, 61530Y (29 March 2006); doi: 10.1117/12.656148
Resist Fundamental
Proc. SPIE 6153, Direct determination of photoresist composition changes during UV exposure, 61530Z (29 March 2006); doi: 10.1117/12.655687
Proc. SPIE 6153, Dissolution fundamentals of 193-nm methacrylate-based photoresists, 615310 (29 March 2006); doi: 10.1117/12.656540
Proc. SPIE 6153, Diffusion mechanism of water for immersion lithography, 615311 (29 March 2006); doi: 10.1117/12.656208
Proc. SPIE 6153, Fundamental parameter extraction for a dry/immersion hybrid photoresist for contact hole applications, 615312 (29 March 2006); doi: 10.1117/12.658030
Proc. SPIE 6153, Fundamentals of the reaction-diffusion process in model EUV photoresists, 615313 (29 March 2006); doi: 10.1117/12.656831
Proc. SPIE 6153, Difference between initial distributions of proton and counter anion in chemically amplified electron-beam resist, 615314 (29 March 2006); doi: 10.1117/12.656869
LER
Proc. SPIE 6153, Deconstructing the resist to probe innate material roughness, 615315 (29 March 2006); doi: 10.1117/12.654437
Proc. SPIE 6153, The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists, 615316 (29 March 2006); doi: 10.1117/12.656464
Proc. SPIE 6153, Study of the effect of amine additives on LWR and LER, 615317 (29 March 2006); doi: 10.1117/12.659465
Proc. SPIE 6153, The transfer of photoresist LER through etch, 615318 (29 March 2006); doi: 10.1117/12.652206
Proc. SPIE 6153, Changes of chemical nature of photoresists induced by various plasma treatments and their impact on LWR, 615319 (29 March 2006); doi: 10.1117/12.656002
NGL
Proc. SPIE 6153, Vinyl ether resist system for UV-cured nanoimprint lithography, 61531A (29 March 2006); doi: 10.1117/12.656518
Proc. SPIE 6153, Adhesion between template materials and UV-cured nanoimprint resists, 61531B (29 March 2006); doi: 10.1117/12.655698
Proc. SPIE 6153, Overcoming pattern collapse on e-beam and EUV lithography, 61531C (29 March 2006); doi: 10.1117/12.656400
Proc. SPIE 6153, Molecular glass resists for next generation lithography, 61531D (29 March 2006); doi: 10.1117/12.656630
Proc. SPIE 6153, Effects of material design on extreme ultraviolet (EUV) resist outgassing, 61531E (29 March 2006); doi: 10.1117/12.657163
Novel Processes and Applications
Proc. SPIE 6153, Nanolithography in thermally sacrificial polymers using nanoscale thermal probes, 61531G (31 March 2006); doi: 10.1117/12.661803
Proc. SPIE 6153, Novel low-dielectric constant photodefinable polyimides for low-temperature polymer processing, 61531H (29 March 2006); doi: 10.1117/12.655600
Proc. SPIE 6153, Development of EUV resists in supercritical CO<sub>2</sub> solutions using CO<sub>2</sub> compatible salts (CCS), 61531I (11 April 2006); doi: 10.1117/12.655880
Proc. SPIE 6153, Optimization of dual BARC structures for hyper-NA immersion lithography, 61531J (29 March 2006); doi: 10.1117/12.651563
Proc. SPIE 6153, Double exposure technology using silicon containing materials, 61531K (29 March 2006); doi: 10.1117/12.657077