Invited Session
Proc. SPIE 6154, From optical proximity correction to lithography-driven physical design (1996-2006): 10 years of resolution enhancement technology and the roadmap enablers for the next decade, 615401 (20 March 2006); doi: 10.1117/12.663289
Proc. SPIE 6154, The optics of photomasks: from shadowy past to scattered future, 615402 (20 March 2006); doi: 10.1117/12.663291
Proc. SPIE 6154, The lithographic lens: its history and evolution, 615403 (15 March 2006); doi: 10.1117/12.656163
Immersion Lithography I
Proc. SPIE 6154, Characterization of imaging performance for immersion lithography at NA=0.93, 615405 (9 March 2006); doi: 10.1117/12.656545
Proc. SPIE 6154, The next phase for immersion lithography, 615406 (15 March 2006); doi: 10.1117/12.657574
Proc. SPIE 6154, Immersion lithography robustness for the C065 node, 615407 (15 March 2006); doi: 10.1117/12.657158
Proc. SPIE 6154, Current status and future prospect of immersion lithography, 615408 (15 March 2006); doi: 10.1117/12.656887
Proc. SPIE 6154, Immersion specific defect mechanisms: findings and recommendations for their control, 615409 (20 March 2006); doi: 10.1117/12.660432
Hyper-NA and Polarization
Proc. SPIE 6154, Evanescent wave imaging in optical lithography, 61540A (15 March 2006); doi: 10.1117/12.657322
Proc. SPIE 6154, Enabling the 45nm node by hyper-NA polarized lithography, 61540B (15 March 2006); doi: 10.1117/12.659006
Proc. SPIE 6154, Effect of azimuthally polarized illumination imaging on device patterns beyond 45nm node, 61540C (15 March 2006); doi: 10.1117/12.656242
Proc. SPIE 6154, Experimental verification of PSM polarimetry: monitoring polarization at 193-nm high-NA with phase-shift masks, 61540D (15 March 2006); doi: 10.1117/12.656589
Proc. SPIE 6154, Polarization aberration analysis in optical lithography systems, 61540E (15 March 2006); doi: 10.1117/12.656864
Proc. SPIE 6154, High NA polarized light lithography for 0.29-k1 process, 61540F (15 March 2006); doi: 10.1117/12.656841
Image and Process Modeling I
Proc. SPIE 6154, Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask, 61540G (15 March 2006); doi: 10.1117/12.655561
Proc. SPIE 6154, Global optimization of the illumination distribution to maximize integrated process window, 61540H (15 March 2006); doi: 10.1117/12.656950
Proc. SPIE 6154, Dense OPC and verification for 45nm, 61540I (15 March 2006); doi: 10.1117/12.659449
Proc. SPIE 6154, OPC and verification accuracy enhancement using the 2D wafer image for the low-k1 memory devices, 61540J (15 March 2006); doi: 10.1117/12.656280
Proc. SPIE 6154, (Lens) design for (chip) manufacture: lens tolerancing based on linewidth calculations in hyper-NA, immersion lithography systems, 61540K (15 March 2006); doi: 10.1117/12.654527
Optimization, Control, and Performance
Proc. SPIE 6154, An integrated lithography concept with application on 45-nm ½ pitch flash memory devices, 61540L (21 March 2006); doi: 10.1117/12.661164
Proc. SPIE 6154, Alt- phase-shift mask technology for 65nm logic applications, 61540M (15 March 2006); doi: 10.1117/12.654691
Proc. SPIE 6154, Across wafer focus mapping and its applications in advanced technology nodes, 61540N (15 March 2006); doi: 10.1117/12.657752
Proc. SPIE 6154, Characterizing a scanner illuminator for prediction of OPE effects, 61540O (15 March 2006); doi: 10.1117/12.656810
Proc. SPIE 6154, MEEF-based correction to achieve OPC convergence of low-k1 lithography with strong OAI, 61540P (15 March 2006); doi: 10.1117/12.656894
Immersion Lithography II
Proc. SPIE 6154, Basic studies of overlay performance on immersion lithography tool, 61540Q (20 March 2006); doi: 10.1117/12.656306
Proc. SPIE 6154, Experimental characterization of the receding meniscus under conditions associated with immersion lithography, 61540R (15 March 2006); doi: 10.1117/12.658894
Proc. SPIE 6154, A dive into clear water: immersion defect capabilities, 61540S (15 March 2006); doi: 10.1117/12.660376
Proc. SPIE 6154, Investigation of immersion related defects using pre- and post-wet experiments, 61540T (20 March 2006); doi: 10.1117/12.656697
Proc. SPIE 6154, Immersion effects on lithography system performance, 61540U (15 March 2006); doi: 10.1117/12.659620
Image Quality and Characterization
Proc. SPIE 6154, Laser bandwidth and other sources of focus blur in lithography, 61540V (15 March 2006); doi: 10.1117/12.656520
Proc. SPIE 6154, Aerial image based lens metrology for wafer steppers, 61540X (15 March 2006); doi: 10.1117/12.659428
Proc. SPIE 6154, Practical approach to full-field wavefront aberration measurement using phase wheel targets, 61540Y (15 March 2006); doi: 10.1117/12.657928
Proc. SPIE 6154, Effects of laser bandwidth on OPE in a modern lithography tool, 61540Z (15 March 2006); doi: 10.1117/12.656816
Developments in RET I
Proc. SPIE 6154, Positive and negative tone double patterning lithography for 50-nm flash memory, 615410 (15 March 2006); doi: 10.1117/12.656187
Proc. SPIE 6154, High transmission mask technology for 45nm node imaging, 615411 (21 March 2006); doi: 10.1117/12.659353
Proc. SPIE 6154, Experimental evaluation of Bulls-Eye illumination for assist-free random contact printing at sub-65nm node, 615412 (15 March 2006); doi: 10.1117/12.659420
Proc. SPIE 6154, Optical properties and process impacts of high transmission EAPSM, 615413 (15 March 2006); doi: 10.1117/12.659238
Proc. SPIE 6154, Inverse lithography technology at chip scale, 615414 (21 March 2006); doi: 10.1117/12.656827
Immersion Lithography Materials
Proc. SPIE 6154, Second generation fluids for 193nm immersion lithography, 615415 (15 March 2006); doi: 10.1117/12.656626
Proc. SPIE 6154, Studies of consequences of photo-acid generator leaching in 193nm immersion lithography, 615416 (15 March 2006); doi: 10.1117/12.659596
Proc. SPIE 6154, Watermark defect formation and removal for immersion lithography, 615417 (15 March 2006); doi: 10.1117/12.658422
Advanced Lithographic Materials
Proc. SPIE 6154, High-index optical materials for 193nm immersion lithography, 615418 (15 March 2006); doi: 10.1117/12.656901
Proc. SPIE 6154, High index fluoride materials for 193 nm immersion lithography, 61541A (15 March 2006); doi: 10.1117/12.657247
Mask Effects and Technologies
Proc. SPIE 6154, Mask defect printing mechanisms for future lithography generations, 61541C (15 March 2006); doi: 10.1117/12.655558
Proc. SPIE 6154, High transmission mask technology for 45nm node imaging, 61541D (15 March 2006); doi: 10.1117/12.659390
Proc. SPIE 6154, Optimizing absorber thickness of attenuating phase-shifting masks for hyper-NA lithography, 61541E (15 March 2006); doi: 10.1117/12.659823
Proc. SPIE 6154, 193-nm immersion photomask image placement in exposure tools, 61541F (15 March 2006); doi: 10.1117/12.656373
Proc. SPIE 6154, EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing, 61541G (15 March 2006); doi: 10.1117/12.659487
Proc. SPIE 6154, Compensation of high-NA mask topography effects by using object modified Kirchhoff model for 65 and 45nm nodes, 61541H (15 March 2006); doi: 10.1117/12.659345
Latest Breaking News and Data
Proc. SPIE 6154, Dynamic leaching procedure on an immersion interference printer, 61541I (21 March 2006); doi: 10.1117/12.684420
Developments in RET II
Proc. SPIE 6154, Fast inverse lithography technology, 61541J (15 March 2006); doi: 10.1117/12.658876
Proc. SPIE 6154, The improvement of DOF for sub-100nm process by focus scan, 61541K (15 March 2006); doi: 10.1117/12.656897
Proc. SPIE 6154, Finding the right way: DFM versus area efficiency for 65nm gate layer lithography, 61541L (15 March 2006); doi: 10.1117/12.656633
Proc. SPIE 6154, Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation, 61541M (15 March 2006); doi: 10.1117/12.655728
Proc. SPIE 6154, Patterning 45nm flash/DRAM contact hole mask with hyper-NA immersion lithography and optimized illumination, 61541O (15 March 2006); doi: 10.1117/12.656982