Proceedings Volume 6184 is from: Logo
SPIE PHOTONICS EUROPE
3-7 April 2006
Strasbourg, France
High-power Lasers
Proc. SPIE 6184, High power single mode 980nm DBR tapered diode lasers with integrated sixth order surface gratings based on simplified fabrication process, 618401 (14 April 2006); doi: 10.1117/12.662698
Proc. SPIE 6184, Influence of thermal effects on the performance of high-power semiconductor lasers and pump-laser modules, 618402 (14 April 2006); doi: 10.1117/12.662809
Proc. SPIE 6184, High power gain switched laser diodes using a novel compact picosecond switch based on a GaAs bipolar junction transistor structure for pumping, 618403 (14 April 2006); doi: 10.1117/12.661881
Proc. SPIE 6184, Design of an ultrahigh-power multisection tunable laser with a semiconductor optical amplifier, 618404 (14 April 2006); doi: 10.1117/12.659652
Coupled-mode Operation
Proc. SPIE 6184, Two-mode dynamics in different semiconductor laser structures, 618405 (17 April 2006); doi: 10.1117/12.666703
Proc. SPIE 6184, Laterally coupled dual wavelength distributed feedback lasers, 618406 (14 April 2006); doi: 10.1117/12.666536
Proc. SPIE 6184, Stability of locking in mutually delay-coupled semiconductor lasers, 618407 (14 April 2006); doi: 10.1117/12.663248
Proc. SPIE 6184, All-optical two-mode switching in semiconductor ring lasers, 618408 (17 April 2006); doi: 10.1117/12.661470
High-performance Lasers
Proc. SPIE 6184, High-gain new InGaAsN heterostructure, 618409 (14 April 2006); doi: 10.1117/12.663398
Proc. SPIE 6184, Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications, 61840A (14 April 2006); doi: 10.1117/12.662723
Proc. SPIE 6184, Improvements in GaInNAs/GaAs quantum-well lasers using focused ion beam post-processing, 61840B (14 April 2006); doi: 10.1117/12.663325
Proc. SPIE 6184, Dilute nitride-based 1.3μm high performance lasers, 61840D (14 April 2006); doi: 10.1117/12.663228
Blue Lasers
Proc. SPIE 6184, Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers, 61840E (14 April 2006); doi: 10.1117/12.662048
Proc. SPIE 6184, 600 mW optical output power at 488 nm using a high power hybrid laser diode system and a PPMgLN bulk crystal, 61840F (14 April 2006); doi: 10.1117/12.662920
Proc. SPIE 6184, Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates, 61840G (14 April 2006); doi: 10.1117/12.662327
Proc. SPIE 6184, Load dislocation density broad area high power CW operated InGaN laser diodes, 61840H (17 April 2006); doi: 10.1117/12.662912
Optical Injection and Dynamics
Proc. SPIE 6184, Theoretical analysis of optical injection locking in semiconductor DFB lasers: influence of the injection direction, 61840I (14 April 2006); doi: 10.1117/12.662872
Proc. SPIE 6184, Model simulations of a reflective semiconductor optical amplifier, 61840J (14 April 2006); doi: 10.1117/12.664878
Proc. SPIE 6184, Time-resolved scanning near-field microscopy of InGaN laser diode dynamics, 61840K (14 April 2006); doi: 10.1117/12.662019
Proc. SPIE 6184, Delay time identification in chaotic optical systems with two delays, 61840L (14 April 2006); doi: 10.1117/12.662751
Proc. SPIE 6184, Coherent generation and control of long lived ultrashort transients in a semiconductor laser, 61840M (14 April 2006); doi: 10.1117/12.663169
High-performance Lasers and Systems
Proc. SPIE 6184, 2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB, 61840N (14 April 2006); doi: 10.1117/12.663448
Proc. SPIE 6184, High power, high brightness Al-free active region tapered lasers at 915 nm, 61840O (14 April 2006); doi: 10.1117/12.663048
Proc. SPIE 6184, Reduced risk of catastrophic optical mirror damage in high power tapered lasers using intracavity diverging lens, 61840P (14 April 2006); doi: 10.1117/12.662653
Proc. SPIE 6184, IPDR improvement and gain reduction in a beam holding SOA, 61840Q (14 April 2006); doi: 10.1117/12.662875
Proc. SPIE 6184, Technological challenges for CW operation of small-radius semiconductor ring lasers, 61840R (14 April 2006); doi: 10.1117/12.667588
Proc. SPIE 6184, GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts, 61840S (14 April 2006); doi: 10.1117/12.661871
External Feedback
Proc. SPIE 6184, Square-wave oscillations in edge-emitting diode lasers with polarization-rotated optical feedback, 61840T (15 April 2006); doi: 10.1117/12.662773
Proc. SPIE 6184, Analysis of the external filtered modes of a semiconductor laser with filtered optical feedback, 61840U (14 April 2006); doi: 10.1117/12.662907
Proc. SPIE 6184, Dynamics of semiconductor lasers with filtered optical feedback, 61840V (14 April 2006); doi: 10.1117/12.663295
Proc. SPIE 6184, Optical frequency dynamics and relaxation oscillations of a semiconductor laser subject to filtered optical feedback, 61840W (20 April 2006); doi: 10.1117/12.662832
Proc. SPIE 6184, External cavity modes in Lang-Kobayashi and traveling wave models, 61840X (14 April 2006); doi: 10.1117/12.663546
Joint Session I VCSELs: Stability Control and High Performance
Proc. SPIE 6184, Spin-controlled vertical cavity surface-emitting lasers, 61840Y (14 April 2006); doi: 10.1117/12.662411
Proc. SPIE 6184, Nonmodal emission characteristics of broad-area vertical-cavity surface-emitting lasers, 61840Z (14 April 2006); doi: 10.1117/12.662012
Proc. SPIE 6184, Optimization of polarization-stable single- and multi-mode surface grating VCSELs towards high fabrication tolerance and superior performance, 618410 (14 April 2006); doi: 10.1117/12.661632
Joint Session II VCSELs: Polarisation Bistability and Switching
Proc. SPIE 6184, Nonlinear dynamics and polarization bistability in optically injected VCSELs, 618411 (14 April 2006); doi: 10.1117/12.662787
Proc. SPIE 6184, The influence of current noise on polarization mode hopping in vertical cavity surface emitting lasers, 618412 (14 April 2006); doi: 10.1117/12.662979
Proc. SPIE 6184, Polarization switching dynamics and bistability in mutually coupled vertical cavity surface emitting lasers, 618413 (14 April 2006); doi: 10.1117/12.663622
Quantum Dot and Quantum Well Devices
Proc. SPIE 6184, Phase amplitude coupling of semiconductor lasers, 618416 (14 April 2006); doi: 10.1117/12.662788
Proc. SPIE 6184, High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature, 618417 (14 April 2006); doi: 10.1117/12.662499
Proc. SPIE 6184, 1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density, 618419 (14 April 2006); doi: 10.1117/12.662752
Proc. SPIE 6184, Numerical evaluation of effective masses of quantum-well semiconductor lasers based on nitrides systems with self-consistent effects, 61841A (14 April 2006); doi: 10.1117/12.673125
Mode-locking Dynamics and Self-phase Modulation
Proc. SPIE 6184, Modeling and optimization of vertical-external-cavity surface-emitting diode lasers for passive mode-locking, 61841B (14 April 2006); doi: 10.1117/12.661774
Proc. SPIE 6184, Measurement of linewidth enhancement factor of different semiconductor lasers in operating conditions, 61841D (14 April 2006); doi: 10.1117/12.665178
Proc. SPIE 6184, Measurement of the linewidth enhancement factor of quantum cascade lasers by the self-mixing technique, 61841E (14 April 2006); doi: 10.1117/12.662986
Mode-locked Lasers
Proc. SPIE 6184, Absorber length optimisation for sub-picosecond pulse generation in passively mode-locked 1.3μm quantum dot laser diodes, 61841F (14 April 2006); doi: 10.1117/12.662892
Proc. SPIE 6184, Characterization of an ultrafast uni-traveling-carrier absorber for monolithically integrated InGaAsP/InP mode-locked laser diodes, 61841G (14 April 2006); doi: 10.1117/12.662402
Proc. SPIE 6184, Study of monolithic integrated Bragg gratings in InGaAsP/InP materials as chirped mode-locked pulse compressors, 61841H (20 April 2006); doi: 10.1117/12.663858
Interactive Poster Session
Proc. SPIE 6184, Facet phase effects on the coherence collapse threshold of 1.55 μm AR/HR distributed feedback semiconductor lasers, 61841J (14 April 2006); doi: 10.1117/12.660914
Proc. SPIE 6184, Enhancement of electron capture efficiency in MQW structures, 61841K (14 April 2006); doi: 10.1117/12.660923
Proc. SPIE 6184, Surface-state charge fluctuations on the carrier dynamics in InGaN/GaN blue light-emitting diodes with multiquantum barriers, 61841L (14 April 2006); doi: 10.1117/12.661116
Proc. SPIE 6184, Generation of linearly chirped signal utilizing the instability region of an optically injected semiconductor laser, 61841M (14 April 2006); doi: 10.1117/12.661862
Proc. SPIE 6184, Transverse mode selection and dynamic behavior of vertical-cavity surface-emitting lasers subject to optical injection, 61841N (14 April 2006); doi: 10.1117/12.661968
Proc. SPIE 6184, DFB laser dynamics and noise characterization by high resolution and high dynamic range measurements of its CW optical spectrum, 61841O (14 April 2006); doi: 10.1117/12.661944
Proc. SPIE 6184, High-efficiency high-power diode laser beam shaping and focusing with constant optical-path length equalization, 61841Q (14 April 2006); doi: 10.1117/12.662405
Proc. SPIE 6184, Actively mode-locked semiconductor lasers using fibre Bragg grating external cavities: importance of apodization on performances, 61841R (14 April 2006); doi: 10.1117/12.662416