PROCEEDINGS VOLUME 6260
MICRO- AND NANOELECTRONICS 2005 | 3-7 OCTOBER 2005
Micro- and Nanoelectronics 2005
MICRO- AND NANOELECTRONICS 2005
3-7 October 2005
Zvenigorod, Russian Federation
Lithography, Plasma, and Beam Processing
Proc. SPIE 6260, Sources of radiations on the basis of capillary discharges, 626001 (10 June 2006); doi: 10.1117/12.676909
Proc. SPIE 6260, Current density and exposure sequence effect in electron lithography, 626002 (10 June 2006); doi: 10.1117/12.676910
Proc. SPIE 6260, Ultra shallow <i>p</i>+-<i>n</i> junctions in Si produced by plasma immersion ion implantation, 626003 (10 June 2006); doi: 10.1117/12.676912
Proc. SPIE 6260, Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow, 626004 (10 June 2006); doi: 10.1117/12.676913
Proc. SPIE 6260, Formation of conductive structures in insulate layers by selective removal of atoms technique, 626005 (10 June 2006); doi: 10.1117/12.677147
Proc. SPIE 6260, Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si02 films, 626006 (10 June 2006); doi: 10.1117/12.676916
Proc. SPIE 6260, Diffusion and phase formation in ternary silicate systems framed by an ion bombardment, 626007 (10 June 2006); doi: 10.1117/12.677013
Proc. SPIE 6260, Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation, 626008 (10 June 2006); doi: 10.1117/12.677148
Proc. SPIE 6260, A self-consistent model for the HCl dc glow discharge: plasma parameters and active particles kinetics, 626009 (10 June 2006); doi: 10.1117/12.677019
Proc. SPIE 6260, Measurement of polymerizing fluorocarbon plasma parameters: dynamic Langmuir probe technique application, 62600A (10 June 2006); doi: 10.1117/12.677021
Materials for Photonics and Optoelectronics
Proc. SPIE 6260, From diffraction grating to photonic crystal: opaque bands formation, 62600B (10 June 2006); doi: 10.1117/12.677023
Proc. SPIE 6260, Boron distribution profiling in asymmetrical n+-p silicon photodiodes and new creation concept of selectively sensitive photoelements for megapixel color photoreceivers, 62600C (10 June 2006); doi: 10.1117/12.677027
Proc. SPIE 6260, Optical properties of silicon nanopowders formed using power electron beam evaporation, 62600D (10 June 2006); doi: 10.1117/12.677042
Proc. SPIE 6260, Synthesis of AIIBV semiconductor nanocrystals by electrochemical deposition and SILAR techniques, 62600E (10 June 2006); doi: 10.1117/12.677059
Thin Films
Proc. SPIE 6260, Morphology and structure of PZT films, 62600F (10 June 2006); doi: 10.1117/12.677064
Proc. SPIE 6260, Silicide/high-k dielectric structures for nanotransistor gates, 62600G (10 June 2006); doi: 10.1117/12.677066
Proc. SPIE 6260, Degradation of thin copper conductors because of low temperature melting, 62600H (10 June 2006); doi: 10.1117/12.677086
Proc. SPIE 6260, Sol-gel derived Sb-doped SnO2/SiO2 nano-composite thin films for gas sensors, 62600I (22 May 2006); doi: 10.1117/12.677149
Proc. SPIE 6260, Controlled change of structure and properties of nanometer polymer layers deposited by electron beam polymerization from vapour phase, 62600J (10 June 2006); doi: 10.1117/12.677152
Semiconductor Nanostructures and Nanodevices
Proc. SPIE 6260, Spin relaxation of holes in Ge quantum dots, 62600K (10 June 2006); doi: 10.1117/12.677158
Proc. SPIE 6260, Electronic transport through silicon nanocrystals embedded in SiO<sub>2</sub> matrix, 62600L (10 June 2006); doi: 10.1117/12.677164
Proc. SPIE 6260, Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface, 62600M (10 June 2006); doi: 10.1117/12.677196
Proc. SPIE 6260, Controlled interference effects of spatial reproduction and multiplication for electron waves in semiconductor 2D nanostructures, 62600N (10 June 2006); doi: 10.1117/12.677202
Proc. SPIE 6260, Surface scattering in SOI field-effect transistor, 62600O (10 June 2006); doi: 10.1117/12.677221
Proc. SPIE 6260, Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier, 62600P (10 June 2006); doi: 10.1117/12.681733
Proc. SPIE 6260, The influence of relaxation on the structure and boundary shape of adatom islands on an incommensurable substrate, 62600Q (10 June 2006); doi: 10.1117/12.681755
Proc. SPIE 6260, Influence of thermodiffusion parameters on the concentration profiles, 62600R (10 June 2006); doi: 10.1117/12.681764
Superconducting and Magnetic Nanostructures
Proc. SPIE 6260, Josephson junctions with ferromagnetic materials, 62600S (10 June 2006); doi: 10.1117/12.681774
Proc. SPIE 6260, Calibration of quantum detector of noise based on a system of asymmetric superconducting loops, 62600T (10 June 2006); doi: 10.1117/12.681803
Proc. SPIE 6260, Sd-exchange switching in magnetic junctions having non-pinned current carrier spins, 62600U (10 June 2006); doi: 10.1117/12.683285
Proc. SPIE 6260, Moessbauer spectra of nanomagnets within rotating hyperfine field, 62600V (10 June 2006); doi: 10.1117/12.683288
Proc. SPIE 6260, Exchange interactions in a ferrimagnetic ring, 62600W (10 June 2006); doi: 10.1117/12.683289
Nanostructures Technologies
Proc. SPIE 6260, Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surface, 62600X (10 June 2006); doi: 10.1117/12.683291
Proc. SPIE 6260, Synthesis of nanowires by pulsed current electrodeposition, 62600Y (10 June 2006); doi: 10.1117/12.683292
Proc. SPIE 6260, Forming matrix nanostructures in silicon, 62600Z (10 June 2006); doi: 10.1117/12.683293
Proc. SPIE 6260, Ge nanoclusters in GeO2: formation and optical properties, 626010 (10 June 2006); doi: 10.1117/12.683295
Proc. SPIE 6260, Factors effected on nanoporous anodic alumina ordering, 626011 (10 June 2006); doi: 10.1117/12.683296
Proc. SPIE 6260, Combined electromagnetic mirror as the probable breakthrough tool in an ion nanotechnology, 626012 (10 June 2006); doi: 10.1117/12.683392
Micro- and Nanostructures Characterization
Proc. SPIE 6260, Metrology in linear measurements of nano-object elements, 626013 (10 June 2006); doi: 10.1117/12.683398
Proc. SPIE 6260, Simultaneous fitting of several x-ray rocking curves from different crystallographic planes of multilayer heterostructures, 626014 (10 June 2006); doi: 10.1117/12.683399
Proc. SPIE 6260, Linear sizes measurements of relief elements with the width less than 100 nm on a SEM, 626015 (10 June 2006); doi: 10.1117/12.683401
Proc. SPIE 6260, Structural and nonlinear-optical studies of ultrathin Si/Si0<sub>2</sub> multiple quantum wells, 626016 (10 June 2006); doi: 10.1117/12.683402
Proc. SPIE 6260, Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods, 626017 (10 June 2006); doi: 10.1117/12.683403
Proc. SPIE 6260, Photoluminescence of 2D electronic epsilon-layers in lateral non-homogeneous nano-structures based on GaAs, 626018 (10 June 2006); doi: 10.1117/12.683405
Proc. SPIE 6260, Rearrangement of resonant-tunneling structure in the electric field revealed by complementary photoluminescence and vertical transport characterization of the GaAs/AlGaAs long-period superlattices, 626019 (10 June 2006); doi: 10.1117/12.683465
Proc. SPIE 6260, The surface roughness investigation by the atomic force microscopy, x-ray scattering, and light scattering, 62601A (10 June 2006); doi: 10.1117/12.683482
Devices and ICs
Proc. SPIE 6260, X-band SPDT switch MMIC based on directional coupler key, 62601B (10 June 2006); doi: 10.1117/12.683483
Proc. SPIE 6260, Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures, 62601C (10 June 2006); doi: 10.1117/12.683486
Proc. SPIE 6260, Thermomigration technology for silicon ball grid array package fabrication, 62601D (10 June 2006); doi: 10.1117/12.683487
Proc. SPIE 6260, Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operation, 62601E (10 June 2006); doi: 10.1117/12.683488
Proc. SPIE 6260, Effective electrostatic discharge protection elements for CMOS circuits, 62601F (10 June 2006); doi: 10.1117/12.683489
Proc. SPIE 6260, Investigations of bipolar magnetotransistor, 62601G (10 June 2006); doi: 10.1117/12.683491
Proc. SPIE 6260, Combined method of copper electroplating deposition and low temperature melting for damascene technology, 62601H (10 June 2006); doi: 10.1117/12.683493
Proc. SPIE 6260, An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits, 62601I (10 June 2006); doi: 10.1117/12.683496
Proc. SPIE 6260, Universal MOSFET parameter analyzer, 62601J (10 June 2006); doi: 10.1117/12.683497
Proc. SPIE 6260, High-speed bistable MEMS commutators, 62601K (10 June 2006); doi: 10.1117/12.683498
Proc. SPIE 6260, Use of thermomigration in MEMS technology, 62601L (10 June 2006); doi: 10.1117/12.683500
Simulation and Modeling
Proc. SPIE 6260, Nonequilibrium diagrammatic technique for nanoscale devices, 62601M (10 June 2006); doi: 10.1117/12.683544