PROCEEDINGS VOLUME 6281
22ND EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 23-26 JANUARY 2006
22nd European Mask and Lithography Conference
22ND EUROPEAN MASK AND LITHOGRAPHY CONFERENCE
23-26 January 2006
Dresden, Germany
Plenary Session
Proc. SPIE 6281, Mask costs: a new look, 628101 (27 June 2006); doi: 10.1117/12.692622
Proc. SPIE 6281, The status of LEEPL: Can it be an alternative solution?, 628102 (27 June 2006); doi: 10.1117/12.692624
Proc. SPIE 6281, Mask industry assessment trend analysis, 628103 (21 June 2006); doi: 10.1117/12.692628
Invited original paper by the authors of the 2005 Bacus Best Poster Paper
Proc. SPIE 6281, Multi-project reticle design and wafer dicing under uncertain demand, 628104 (27 June 2006); doi: 10.1117/12.692627
EUV
Proc. SPIE 6281, The first full-field EUV masks ready for printing, 628105 (21 June 2006); doi: 10.1117/12.692629
Proc. SPIE 6281, Iso-sciatic point: novel approach to distinguish shadowing 3-D mask effects from scanner aberrations in extreme ultraviolet lithography, 628106 (21 June 2006); doi: 10.1117/12.692630
Proc. SPIE 6281, Characterizing the response of an EUV reticle during electrostatic chucking, 628107 (21 June 2006); doi: 10.1117/12.692727
Advanced Lithography and Simulation
Proc. SPIE 6281, Printability study with polarization based AIMS fab 193i to investigate mask polarization effects, 628108 (21 June 2006); doi: 10.1117/12.692728
Proc. SPIE 6281, Polarization effects: EAPSM vs. TT EAPSM, 628109 (21 June 2006); doi: 10.1117/12.692729
Proc. SPIE 6281, Rigorous mask modeling beyond the Hopkins approach, 62810A (21 June 2006); doi: 10.1117/12.692730
Proc. SPIE 6281, Consequences of plasmonic effects in photomasks, 62810B (21 June 2006); doi: 10.1117/12.692732
Proc. SPIE 6281, Calibration of test masks used for lithography lens systems, 62810C (21 June 2006); doi: 10.1117/12.692735
Metrology
Proc. SPIE 6281, Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test mask, 62810D (21 June 2006); doi: 10.1117/12.692736
Proc. SPIE 6281, A new life for a 10-year old MueTec2010 CD measurement system: the ultimate precision upgrade with additional film thickness measurement capability, 62810E (21 June 2006); doi: 10.1117/12.692737
Proc. SPIE 6281, Spot sensor enabled reticle uniformity measurements for 65nm CDU analysis with scatterometry, 62810F (21 June 2006); doi: 10.1117/12.692636
DFM & MDP
Proc. SPIE 6281, Data prep: the bottleneck of future applications?, 62810G (21 June 2006); doi: 10.1117/12.692638
Proc. SPIE 6281, Mask data volume: historical perspective and future requirements, 62810H (21 June 2006); doi: 10.1117/12.692639
Proc. SPIE 6281, ORC and LfD as first steps towards DfM, 62810I (21 June 2006); doi: 10.1117/12.692641
Mask Making, Mask Repair and Mask Cleaning
Proc. SPIE 6281, A new generation of progressive mask defects on the pattern side of advanced photomasks, 62810J (21 June 2006); doi: 10.1117/12.692642
Proc. SPIE 6281, Advanced processes for photomask damage-free cleaning and photoresist removal, 62810K (21 June 2006); doi: 10.1117/12.692644
Proc. SPIE 6281, The performance of positive and negative CAR mask exposed by Leica 20 KeV writing system, 62810L (21 June 2006); doi: 10.1117/12.692646
Proc. SPIE 6281, Recent application results from the novel e-beam-based mask repair system MeRiT MG, 62810M (21 June 2006); doi: 10.1117/12.692647
Nano Imprint Lithography, NIL
Proc. SPIE 6281, Nanoimprint lithography techniques: an introduction, 62810N (21 June 2006); doi: 10.1117/12.692648
Proc. SPIE 6281, Plasma deposited and evaporated thin resists for template fabrication, 62810O (21 June 2006); doi: 10.1117/12.692742
Immersion Lithography 1
Proc. SPIE 6281, How refractive microoptics enable lossless hyper-NA illumination systems for immersion lithography, 62810P (21 June 2006); doi: 10.1117/12.692704
Proc. SPIE 6281, A correlation for predicting film-pulling velocity in immersion lithography, 62810Q (21 June 2006); doi: 10.1117/12.692706
Proc. SPIE 6281, The magic of 4X mask reduction, 62810R (21 June 2006); doi: 10.1117/12.692707
Immersion Lithography 2
Proc. SPIE 6281, Through-pitch and through-focus characterization of AAPSM for ArF immersion lithography, 62810S (21 June 2006); doi: 10.1117/12.692802
Proc. SPIE 6281, Manufacturability and printability of AAPSM with transparent etch stop layer, 62810T (21 June 2006); doi: 10.1117/12.692803
Proc. SPIE 6281, Analysis method to determine and characterize the mask mean-to-target and uniformity specification, 62810U (21 June 2006); doi: 10.1117/12.692804
Proc. SPIE 6281, Mask absorber material dependence of 2D OPC in ArF high NA lithography, 62810V (21 June 2006); doi: 10.1117/12.692807
Poster Session
Proc. SPIE 6281, A technique to determine a capability to detect adjacent defects during the die-to-database inspection of reticle patterns, 62810W (21 June 2006); doi: 10.1117/12.692744
Proc. SPIE 6281, Assist feature placement analysis using focus sensitivity models, 62810X (21 June 2006); doi: 10.1117/12.692745
Proc. SPIE 6281, Design for manufacturing validation tool: fast and reliable conversion of SEM images to GDS images, 62810Y (21 June 2006); doi: 10.1117/12.692747
Proc. SPIE 6281, CD and profile metrology of embedded phase shift masks using scatterometry, 62810Z (21 June 2006); doi: 10.1117/12.692699
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