PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XIII
18-20 April 2006
Yokohama, Japan
Mask Business and Management
Proc. SPIE 6283, Design for manufacturability production management activity report, 628302 (20 May 2006); doi: 10.1117/12.681729
Proc. SPIE 6283, Photomask automation improvement to eliminate manufacturing errors, 628303 (20 May 2006); doi: 10.1117/12.681730
Patterning
Proc. SPIE 6283, Sigma7500: an improved DUV laser pattern generator addressing sub-100-nm photomask accuracy and productivity requirements, 628305 (20 May 2006); doi: 10.1117/12.681731
Proc. SPIE 6283, EBM-5000: electron-beam mask writer for 45 nm node, 628306 (20 May 2006); doi: 10.1117/12.681732
Proc. SPIE 6283, Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement, 628307 (20 May 2006); doi: 10.1117/12.681734
Proc. SPIE 6283, Study of higher electron beam energy for the mask production for 30 nm node technology, 628308 (20 May 2006); doi: 10.1117/12.681735
Process and Materials
Proc. SPIE 6283, Real time analysis of the haze environment trapped between the pellicle film and the mask surface, 62830A (20 May 2006); doi: 10.1117/12.681736
Proc. SPIE 6283, Sulfate-free photomask cleaning technology, 62830B (20 May 2006); doi: 10.1117/12.681737
Proc. SPIE 6283, Photomask etch challenges for future technology nodes, 62830C (19 May 2006); doi: 10.1117/12.684417
Proc. SPIE 6283, Advanced process control of mask dry-etching using RF sensor, 62830D (20 May 2006); doi: 10.1117/12.681740
Proc. SPIE 6283, Irradiation resistance of intravolume shading elements embedded in photomasks used for CD uniformity control by local intra-field transmission attenuation, 62830E (20 May 2006); doi: 10.1117/12.681741
EUV Masks (I)
Proc. SPIE 6283, EUV mask process development and integration, 62830G (20 May 2006); doi: 10.1117/12.681839
Proc. SPIE 6283, EUV mask development status at ASET and DNP, 62830H (20 May 2006); doi: 10.1117/12.681840
Proc. SPIE 6283, A study of damage mechanisms during EUV mask substrate cleaning, 62830I (20 May 2006); doi: 10.1117/12.681841
EUV Masks (II)
Proc. SPIE 6283, Optimization of TaSix absorber stack for EUV mask, 62830J (20 May 2006); doi: 10.1117/12.681842
Proc. SPIE 6283, EUV mask pattern defect printability, 62830K (20 May 2006); doi: 10.1117/12.681844
Proc. SPIE 6283, Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography, 62830L (20 May 2006); doi: 10.1117/12.681845
Proc. SPIE 6283, Clean mask shipping module development and demonstration for EUVL masks and blanks, 62830M (20 May 2006); doi: 10.1117/12.681847
MDP and DFM
Proc. SPIE 6283, Advanced mask rule check (MRC) tool, 62830O (20 May 2006); doi: 10.1117/12.681848
Proc. SPIE 6283, Optimization of layout design and OPC by using estimation of transistor properties, 62830P (20 May 2006); doi: 10.1117/12.681850
Proc. SPIE 6283, Lithography process window enhancement using integrated design defect detection and fix, 62830Q (20 May 2006); doi: 10.1117/12.681851
Proc. SPIE 6283, Automated hot-spot fixing system applied for metal layers of 65 nm logic devices, 62830R (20 May 2006); doi: 10.1117/12.681852
OPC and RET
Proc. SPIE 6283, Automatic pitch decomposition for improved process window when printing dense features at k<sub>1</sub>eff<0.20, 62830T (20 May 2006); doi: 10.1117/12.681853
Proc. SPIE 6283, Dark field double dipole lithography (DDL) for 45 nm node and beyond, 62830U (20 May 2006); doi: 10.1117/12.681854
Proc. SPIE 6283, Highly accurate modeling by using 2-dimensional calibration data set for model-based OPC verification, 62830V (20 May 2006); doi: 10.1117/12.681855
Proc. SPIE 6283, A focus exposure matrix model for full chip lithography manufacturability check and optical proximity correction, 62830W (20 May 2006); doi: 10.1117/12.681856
Proc. SPIE 6283, Inverse lithography technology (ILT): What is the impact to the photomask industry?, 62830X (20 May 2006); doi: 10.1117/12.681857
Inspection and Repair
Proc. SPIE 6283, Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond, 62830Y (19 May 2006); doi: 10.1117/12.683579
Proc. SPIE 6283, Novel mask inspection flow for better defect review and analysis, 62830Z (20 May 2006); doi: 10.1117/12.681858
Proc. SPIE 6283, Advanced photomask repair technology for 65-nm lithography, 628310 (20 May 2006); doi: 10.1117/12.681859
Proc. SPIE 6283, Mask repair technique assessment and development for the 45nm lithographic node, 628311 (19 May 2006); doi: 10.1117/12.681862
Metrology
Proc. SPIE 6283, First results for hyper NA scanner emulation from AIMS 45-193i, 628312 (20 May 2006); doi: 10.1117/12.681863
Proc. SPIE 6283, Scatterometry based CD and profile metrology of chrome-less masks using optical digital profilometry, 628313 (3 May 2006); doi: 10.1117/12.681864
Proc. SPIE 6283, Assurance of CD for 45-nm half-pitch with immersion microscope, 628314 (20 May 2006); doi: 10.1117/12.681866
Proc. SPIE 6283, Measurement tool influence on CD results on photolithographic masks, 628315 (20 May 2006); doi: 10.1117/12.681867
Mask Related Lithography (I)
Mask Related Lithography (II)
Poster Session: Patterning
Proc. SPIE 6283, Pattern fidelity enhancement with OPC pattern generation on laser lithography, 62831H (20 May 2006); doi: 10.1117/12.681742
Proc. SPIE 6283, Reducing process contributions to CD error range using the Sigma7500 pattern generator and ProcessEqualizer, 62831I (20 May 2006); doi: 10.1117/12.681743
Proc. SPIE 6283, Mask fabrication results using new laser writing system: Sigma7300, 62831J (20 May 2006); doi: 10.1117/12.681744
Proc. SPIE 6283, A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin, 62831K (20 May 2006); doi: 10.1117/12.681745
Proc. SPIE 6283, Higher current density operation with EB reticle writer EBM-5000, 62831L (20 May 2006); doi: 10.1117/12.681747
Proc. SPIE 6283, Experimental characterization of constituent errors in electron-beam lithography, 62831M (20 May 2006); doi: 10.1117/12.681748
Poster Session: Mask Process, Etching, and Materials
Proc. SPIE 6283, The design and qualification of the TEL CLEAN TRACK ACT M photomask coating tool at Intel, 62831P (20 May 2006); doi: 10.1117/12.681751
Proc. SPIE 6283, EBL resist heating error and its correction, 62831Q (20 May 2006); doi: 10.1117/12.681752
Proc. SPIE 6283, Simulation of dry etch profile dynamics and CD variation due to microloading, 62831R (20 May 2006); doi: 10.1117/12.681753
Proc. SPIE 6283, Advanced hybrid mask process development, 62831S (20 May 2006); doi: 10.1117/12.681754