Invited Session
Proc. SPIE 6349, Mask industry assessment: 2006, 634902 (20 October 2006); doi: 10.1117/12.684179
Proc. SPIE 6349, A model to predict the critical velocity for liquid loss from a receding meniscus, 634904 (20 October 2006); doi: 10.1117/12.693286
Resist Process
Proc. SPIE 6349, Chemical flare long-range proximity effects in photomask manufacturing with chemically amplified resists, 634905 (20 October 2006); doi: 10.1117/12.686732
Proc. SPIE 6349, PAB and PEB temperature gradient methodology for CAR optimization, 634906 (20 October 2006); doi: 10.1117/12.692939
Proc. SPIE 6349, An ultra-uniform ultra-thin resist deposition process, 634907 (20 October 2006); doi: 10.1117/12.685640
Etch
Proc. SPIE 6349, A novel process of etching EUV masks for future generation technology, 634909 (20 October 2006); doi: 10.1117/12.705403
Proc. SPIE 6349, Controlling CD uniformity for 45nm technology node applications, 63490A (20 October 2006); doi: 10.1117/12.686390
Proc. SPIE 6349, Mask CD correction method using dry-etch process, 63490B (20 October 2006); doi: 10.1117/12.686537
Proc. SPIE 6349, The study of optical performance for quartz dry etching quality in ArF lithography, 63490C (20 October 2006); doi: 10.1117/12.686839
DPI/DFM
Proc. SPIE 6349, Mask complexity reduction, quality assurance, and yield improvement through reduced layout variability, 63490D (20 October 2006); doi: 10.1117/12.685298
Proc. SPIE 6349, Litho-friendly design (LfD) methodologies applied to library cells, 63490E (20 October 2006); doi: 10.1117/12.687546
Proc. SPIE 6349, Integrated DFM framework for dynamic yield optimization, 63490F (20 October 2006); doi: 10.1117/12.686440
Proc. SPIE 6349, Application of Dosemapper for 65-nm gate CD control: strategies and results, 63490G (20 October 2006); doi: 10.1117/12.692938
Proc. SPIE 6349, Fast dual graph-based hotspot detection, 63490H (20 October 2006); doi: 10.1117/12.692949
Mask Substrate and Materials
Proc. SPIE 6349, Multi-layer resist system for 45-nm-node and beyond: part I, 63490I (20 October 2006); doi: 10.1117/12.693131
Proc. SPIE 6349, Process window enhancement for 45-nm node using alterable transmission phase-shifting materials, 63490J (20 October 2006); doi: 10.1117/12.686022
Proc. SPIE 6349, Optical issues of thin organic pellicles in 45-nm and 32-nm immersion lithography, 63490K (20 October 2006); doi: 10.1117/12.686741
Proc. SPIE 6349, Feasibility study of embedded binary masks, 63490L (20 October 2006); doi: 10.1117/12.686290
Metrology I
Proc. SPIE 6349, Contact hole CD and profile metrology of binary and phase-shift masks: effect of modeling strategies in application of scatterometery, 63490M (20 October 2006); doi: 10.1117/12.686305
Proc. SPIE 6349, Improved prediction of across chip linewidth variation (ACLV) with photomask aerial image CD metrology, 63490N (20 October 2006); doi: 10.1117/12.686449
Proc. SPIE 6349, Design-based mask metrology hot spot classification and recipe making through random pattern recognition method, 63490O (20 October 2006); doi: 10.1117/12.690988
Proc. SPIE 6349, Determination of spatial CD signatures on photomasks, 63490P (20 October 2006); doi: 10.1117/12.685952
Inspection
Proc. SPIE 6349, Analysis of optical lithography capabilities of pixelized photomasks and spatial light modulators, 63490R (20 October 2006); doi: 10.1117/12.686518
Proc. SPIE 6349, High-resolution mask inspection in advanced fab, 63490S (20 October 2006); doi: 10.1117/12.686402
Proc. SPIE 6349, Limitations of optical reticle inspection for 45-nm node and beyond, 63490T (20 October 2006); doi: 10.1117/12.686078
Proc. SPIE 6349, Wafer fab mask qualification techniques and limitations, 63490U (20 October 2006); doi: 10.1117/12.692525
Patterning
Proc. SPIE 6349, Variable shaped beam writing throughput at the 45nm node and beyond, 63490V (20 October 2006); doi: 10.1117/12.686566
Proc. SPIE 6349, Study of the beam blur and its effect on the future mask fabrication, 63490X (20 October 2006); doi: 10.1117/12.686472
Proc. SPIE 6349, Improved photomask accuracy with a high-productivity DUV laser pattern generator, 63490Y (20 October 2006); doi: 10.1117/12.686196
Proc. SPIE 6349, Metrics to assess fracture quality for variable shaped beam lithography, 63490Z (20 October 2006); doi: 10.1117/12.686713
Extreme NA/Immersion
Proc. SPIE 6349, Process results using automatic pitch decomposition and double patterning technology (DPT) at k1eff <0.20, 634910 (20 October 2006); doi: 10.1117/12.687747
Proc. SPIE 6349, The effects of the photomask on multiphase shift test monitors, 634912 (20 October 2006); doi: 10.1117/12.693199
Proc. SPIE 6349, Image degradation due to phase effects in chromeless phase lithography, 634913 (20 October 2006); doi: 10.1117/12.685983
MDP/MRC
Proc. SPIE 6349, Advanced non-disruptive manufacturing rule checks (MRC), 634915 (20 October 2006); doi: 10.1117/12.692945
Proc. SPIE 6349, A generic method for the detection of electrically superfluous layout features, 634916 (20 October 2006); doi: 10.1117/12.687856
Proc. SPIE 6349, Mask specification for for wafer process optimization, 634917 (20 October 2006); doi: 10.1117/12.686610
Proc. SPIE 6349, A memory efficient large mask data handling method using repetition, 634918 (20 October 2006); doi: 10.1117/12.686491
Simulation
Proc. SPIE 6349, Sensitivity of a variable threshold model toward process and modeling parameters, 634919 (20 October 2006); doi: 10.1117/12.686666
Proc. SPIE 6349, Imaging behavior of high-transmission attenuating phase-shift mask films, 63491A (20 October 2006); doi: 10.1117/12.686231
Proc. SPIE 6349, Optical properties of alternating phase-shifting masks, 63491B (20 October 2006); doi: 10.1117/12.686147
Proc. SPIE 6349, Optimization of process window simulations for litho-friendly design framework, 63491C (20 October 2006); doi: 10.1117/12.686313
Repair
Proc. SPIE 6349, Impact of AFM scan artifacts on photolithographic simulation, 63491D (20 October 2006); doi: 10.1117/12.686376
Proc. SPIE 6349, Advanced photomask repair technology for 65-nm lithography, 63491E (23 October 2006); doi: 10.1117/12.691195
Proc. SPIE 6349, Mask repair using layout-based pattern copy for the 65-nm node and beyond, 63491G (20 October 2006); doi: 10.1117/12.686404
Cleaning
Proc. SPIE 6349, A new model of haze generation and storage-life-time estimation for mask, 63491H (20 October 2006); doi: 10.1117/12.688936
Proc. SPIE 6349, Real-time monitoring based on comprehensive analysis of the haze environment under the pellicle film, 63491I (20 October 2006); doi: 10.1117/12.685774
Proc. SPIE 6349, Sulfur-free cleaning strategy for advanced mask manufacturing, 63491J (20 October 2006); doi: 10.1117/12.686228
Metrology II
Proc. SPIE 6349, Simulation of critical dimension and profile metrology based on scatterometry method, 63491K (20 October 2006); doi: 10.1117/12.688623
Proc. SPIE 6349, Segmentation-assisted edge extraction algorithms for SEM images, 63491L (20 October 2006); doi: 10.1117/12.691464
Proc. SPIE 6349, Analysis of the Vistec LMS IPRO3 performance and accuracy enhancement techniques, 63491M (20 October 2006); doi: 10.1117/12.686089
Proc. SPIE 6349, CD measurement evaluation on periodic patterns between optic tools and CD-SEM, 63491N (20 October 2006); doi: 10.1117/12.686461
Proc. SPIE 6349, Fast nondestructive optical measurements of critical dimension uniformity and linearity on AEI and ASI phase-shift masks, 63491O (20 October 2006); doi: 10.1117/12.686150
Advanced RET I
Proc. SPIE 6349, Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique, 63491P (20 October 2006); doi: 10.1117/12.692285
Proc. SPIE 6349, Identification of subresolution assist features that are susceptible to imaging through process, 63491Q (20 October 2006); doi: 10.1117/12.692464
Proc. SPIE 6349, A fresh look at the cell-wise process effect corrections, 63491R (20 October 2006); doi: 10.1117/12.688731