PROCEEDINGS VOLUME 6352
ASIA-PACIFIC OPTICAL COMMUNICATIONS | 3-7 SEPTEMBER 2006
Optoelectronic Materials and Devices
Proceedings Volume 6352 is from: Logo
ASIA-PACIFIC OPTICAL COMMUNICATIONS
3-7 September 2006
Gwangju, South Korea
Photonic Integration
Proc. SPIE 6352, Integrated microring resonator circuits for large-scale optical cross-connects, 635201 (26 September 2006); doi: 10.1117/12.687431
Proc. SPIE 6352, Channel drop filters realized in a surface plasmon-polaritons metal, 635202 (2 October 2006); doi: 10.1117/12.688127
Proc. SPIE 6352, Time-domain analysis of widely tunable coupled-ring reflector laser diodes, 635203 (5 October 2006); doi: 10.1117/12.688611
Proc. SPIE 6352, A tunable optical delay line based on slow light, 635204 (5 October 2006); doi: 10.1117/12.688424
Proc. SPIE 6352, Sidelobe reduction in Si photonic wire AWG, 635205 (5 October 2006); doi: 10.1117/12.690948
PC I
Proc. SPIE 6352, Photonic crystal based centrifugal microfluidic biosensors, 635207 (5 October 2006); doi: 10.1117/12.690185
Proc. SPIE 6352, Active/passive integrated photonic crystal slab μ-laser, 635208 (5 October 2006); doi: 10.1117/12.687252
Proc. SPIE 6352, Compact polarization beam splitter employing positive/negative refraction based on photonic crystals of pillar type, 635209 (5 October 2006); doi: 10.1117/12.688197
Proc. SPIE 6352, Improved Si/Er light emitter by using two-dimensional plasmonic crystals, 63520A (5 October 2006); doi: 10.1117/12.689063
High-Speed Sources
Proc. SPIE 6352, 1310-nm InGaAlAs short-cavity lasers for 10-Gbit/s low-power-consumption transceivers, 63520B (5 October 2006); doi: 10.1117/12.691031
Proc. SPIE 6352, Characteristics of 10Gbit/s common shallow ridge waveguide laser-electroabsorption modulator, 63520C (5 October 2006); doi: 10.1117/12.688536
Proc. SPIE 6352, Highly integrated 10Gb/s optical sub-assembly and its circuit modeling, 63520D (5 October 2006); doi: 10.1117/12.687391
Proc. SPIE 6352, Effect of coupling coefficients on self-pulsation characteristics in multi-section DFB lasers with amplifying optical feedback, 63520E (5 October 2006); doi: 10.1117/12.688103
PC II
Proc. SPIE 6352, Lasing dynamics of photonic crystal single cell laser cavity by gain finite-difference time-domain method, 63520G (5 October 2006); doi: 10.1117/12.688737
Proc. SPIE 6352, Chromatic dispersion and DGD measurement of air-guiding photonic bandgap fibers, 63520H (5 October 2006); doi: 10.1117/12.689109
Telecom LDs
Proc. SPIE 6352, Wideband high-power external cavity wavelength tunable laser, 63520J (5 October 2006); doi: 10.1117/12.692711
Proc. SPIE 6352, High-performance operations of sampled grating DBR lasers with optimized butt-coupling method, 63520K (10 October 2006); doi: 10.1117/12.691516
Proc. SPIE 6352, High-temperature operation of a 1.2-µm single-transverse-mode highly strained GaInAs/GaAs QW laser, 63520L (5 October 2006); doi: 10.1117/12.691841
Proc. SPIE 6352, High-power wide temperature range (-40°C ~100°C) operation of 1300-nm InGaAsP DFB lasers with asymmetric MQWs, 63520M (5 October 2006); doi: 10.1117/12.688467
PC III
Proc. SPIE 6352, Silicon modulators based on photonic-crystal waveguides, 63520N (5 October 2006); doi: 10.1117/12.691275
Proc. SPIE 6352, Fabrication of nano woodpile structure, 63520O (5 October 2006); doi: 10.1117/12.691150
Proc. SPIE 6352, Influence of etching slope on two-dimensional photonic crystal slab resonators, 63520P (5 October 2006); doi: 10.1117/12.688885
Proc. SPIE 6352, A source of polarization entangled photon pairs based on two-dimensional photonic crystals, 63520Q (10 October 2006); doi: 10.1117/12.688290
Proc. SPIE 6352, External control of guided resonance in photonic crystal slab by changing the index anisotropy of liquid crystal, 63520R (5 October 2006); doi: 10.1117/12.691209
Proc. SPIE 6352, Tunable photonic crystals based on EIT media, 63520S (6 October 2006); doi: 10.1117/12.688969
Proc. SPIE 6352, Improved transfer matrix method used in photonic crystal devices design, 63520T (6 October 2006); doi: 10.1117/12.687982
VCSEL
Proc. SPIE 6352, Horizontal cavity vertically emitting lasers with integrated monitor photodiodes, 63520U (6 October 2006); doi: 10.1117/12.689153
Proc. SPIE 6352, Optical subassembly with 57 degree-angled fiber array and silicon optical bench for VCSEL array and parallel optical transmitter module, 63520W (6 October 2006); doi: 10.1117/12.688472
Proc. SPIE 6352, Scalar transfer matrix method analysis of ARROW VCSEL, 63520Y (5 October 2006); doi: 10.1117/12.691010
Proc. SPIE 6352, Influence of geometrical parameters on speed characteristics of intracavity-contacted oxide-confined VCSELs, 63520Z (5 October 2006); doi: 10.1117/12.688080
Proc. SPIE 6352, Focused-ion-beam post-processing technology for active devices, 635210 (10 October 2006); doi: 10.1117/12.691640
PC IV
Proc. SPIE 6352, Clear focusing of light in photonic crystal superlens, 635212 (6 October 2006); doi: 10.1117/12.688653
Proc. SPIE 6352, Toward efficient unidirectional photonic crystal light emitters, 635213 (6 October 2006); doi: 10.1117/12.688577
Proc. SPIE 6352, Free carrier screening in coupled asymmetric GaN quantum discs, 635214 (6 October 2006); doi: 10.1117/12.689176
Proc. SPIE 6352, Scaling issues in intra-cavity contacted oxide-aperture VCSELs for high-speed operation, 635215 (6 October 2006); doi: 10.1117/12.691212
Novel Devices
Proc. SPIE 6352, Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections, 635217 (6 October 2006); doi: 10.1117/12.691710
Proc. SPIE 6352, Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure, 635218 (6 October 2006); doi: 10.1117/12.692714
Proc. SPIE 6352, Coupled resonator optical waveguide structures with highly dispersive media, 635219 (6 October 2006); doi: 10.1117/12.688968
Optical Devices
Proc. SPIE 6352, Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors, 63521C (6 October 2006); doi: 10.1117/12.688702
Proc. SPIE 6352, A novel high performance planar InGaAs/InAlAs avalanche photodiode, 63521D (6 October 2006); doi: 10.1117/12.688353
Proc. SPIE 6352, Wavelength-selective photodetectors operating at long wavelength, 63521E (6 October 2006); doi: 10.1117/12.688384
Photonic Integrated Circuits I
Proc. SPIE 6352, Recent advances in photonic integrated circuits, 63521F (6 October 2006); doi: 10.1117/12.691809
Proc. SPIE 6352, Enhanced modulation efficiency in waveguide-coupled micro-ring cavity resonators with self-aligned total internal reflector, 63521G (6 October 2006); doi: 10.1117/12.691777
Proc. SPIE 6352, Dynamic focusing microlens array using liquid crystalline polymer and a liquid crystal, 63521H (6 October 2006); doi: 10.1117/12.691799
Short-Wavelength Devices
Proc. SPIE 6352, Recent progress of high-power InGaN blue-violet laser diodes, 63521I (6 October 2006); doi: 10.1117/12.691128
Proc. SPIE 6352, Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes, 63521J (6 October 2006); doi: 10.1117/12.691215
Proc. SPIE 6352, Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure, 63521L (6 October 2006); doi: 10.1117/12.691608
Photonic Integrated Circuits II
Proc. SPIE 6352, 10Gbps zero-chirp compact transmitter with InP MQW Mach-Zehnder modulator, 63521N (6 October 2006); doi: 10.1117/12.687767
Proc. SPIE 6352, Bi-directional small form pluggable optical transceiver using an integrated WDM optical subassembly, 63521O (6 October 2006); doi: 10.1117/12.690913
Proc. SPIE 6352, Design and analysis of all-optical logic gates using injection-locking in semiconductor lasers, 63521P (6 October 2006); doi: 10.1117/12.688112
Proc. SPIE 6352, Fiber alignment analysis of a receiver with integrated MEMS VOA, 63521Q (6 October 2006); doi: 10.1117/12.688522
Proc. SPIE 6352, The testing of responding time delay of the hybrid integrated circuit of PIN photodiode, 63521R (6 October 2006); doi: 10.1117/12.687772
Special Session on Silicon Photonics
Proc. SPIE 6352, Nanocrystal silicon light emitting devices, 63521T (6 October 2006); doi: 10.1117/12.688243
Proc. SPIE 6352, Development and applications of a Si nanophotodiode with a surface plasmon antenna, 63521U (6 October 2006); doi: 10.1117/12.691553
QD Devices I
Proc. SPIE 6352, The elastic strain field distribution of InAs/GaAs self-organized periodical quantum dots' array, 63521Y (6 October 2006); doi: 10.1117/12.688966
Proc. SPIE 6352, Enhanced terahertz emission from InAs quantum dots on GaAs, 63521Z (6 October 2006); doi: 10.1117/12.691628
Proc. SPIE 6352, Multi-walled carbon nanotubes for all-optical switching, 635220 (10 October 2006); doi: 10.1117/12.689181
Optoelectronic Devices
Proc. SPIE 6352, Si-based optoelectronic devices for optical communications, 635221 (6 October 2006); doi: 10.1117/12.688722