PROCEEDINGS VOLUME 6473
INTEGRATED OPTOELECTRONIC DEVICES 2007 | 20-25 JANUARY 2007
Gallium Nitride Materials and Devices II
IN THIS VOLUME

0 Sessions, 50 Papers, 0 Presentations
Front Matter  (1)
Growth  (4)
FETs I  (5)
LEDs II  (3)
Lasers I  (3)
Defects  (3)
FETs II  (4)
Lasers II  (5)
FETs III  (4)
LEDs IV  (3)
INTEGRATED OPTOELECTRONIC DEVICES 2007
20-25 January 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6473, Front Matter: Volume 6473, 647301 (16 February 2007); doi: 10.1117/12.727171
Growth
Proc. SPIE 6473, New possibility of MOVPE-growth in GaN and InN: polarization in GaN and nitrogen-incorporation in InN, 647302 (8 February 2007); doi: 10.1117/12.707607
Proc. SPIE 6473, Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD, 647303 (7 February 2007); doi: 10.1117/12.706826
Proc. SPIE 6473, Low dislocation density GaN grown by MOCVD with SiNx nano-network, 647304 (8 February 2007); doi: 10.1117/12.706936
Proc. SPIE 6473, Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy, 647305 (8 February 2007); doi: 10.1117/12.706938
Electrical and Optical Characterization
Proc. SPIE 6473, Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia, 647306 (8 February 2007); doi: 10.1117/12.701394
Proc. SPIE 6473, Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [1100] direction, 647307 (8 February 2007); doi: 10.1117/12.699662
Proc. SPIE 6473, AFM and CAFM studies of ELO GaN films, 647308 (8 February 2007); doi: 10.1117/12.706773
Proc. SPIE 6473, Magneto-transport properties of MOVPE-grown AlxGa1-xN/AlN/GaN heterostructures with high-mobility two-dimensional electron gas, 647309 (8 February 2007); doi: 10.1117/12.706499
Proc. SPIE 6473, Investigation of current voltage characteristics of n-GaN/i-AlxGa1-xN/n-GaN structures, 64730A (8 February 2007); doi: 10.1117/12.706793
Proc. SPIE 6473, Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures, 64730B (8 February 2007); doi: 10.1117/12.703472
Proc. SPIE 6473, Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures, 64730C (8 February 2007); doi: 10.1117/12.703478
Proc. SPIE 6473, Characterization of the carrier localization confinement for InGaN/GaN multiple quantum well heterostructures with hydrogen-flow treatments, 64730D (8 February 2007); doi: 10.1117/12.700532
Special Topics
Proc. SPIE 6473, Wide bandgap UV photodetectors: a short review of devices and applications, 64730E (8 February 2007); doi: 10.1117/12.705393
Proc. SPIE 6473, Spontaneous polarizations, electrical properties, and phononic properties of GaN nanostructures and systems, 64730F (8 February 2007); doi: 10.1117/12.696291
Point Defects
Proc. SPIE 6473, Summary of deep level defect characteristics in GaN and AlGaN, 64730L (8 February 2007); doi: 10.1117/12.709709
Proc. SPIE 6473, Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN, 64730M (8 February 2007); doi: 10.1117/12.698980
Proc. SPIE 6473, Point defect reduction in GaN layers grown with the aid of SiNx nanonet by metalorganic chemical vapor deposition, 64730N (8 February 2007); doi: 10.1117/12.706828
FETs I
Proc. SPIE 6473, Quantum 1/f noise in GaN FETs, HFETs, MODFETs, and their oscillators' phase noise, 64730O (8 February 2007); doi: 10.1117/12.703257
Proc. SPIE 6473, Accumulation of hot phonons in GaN and related structures, 64730P (8 February 2007); doi: 10.1117/12.703451
Proc. SPIE 6473, Subpicosecond time-resolved Raman studies of LO phonons in GaN, 64730Q (8 February 2007); doi: 10.1117/12.703681
Proc. SPIE 6473, AlGaN/GaN MODFET regrown by rf-MBE on MOCVD templates, 64730R (8 February 2007); doi: 10.1117/12.706791
Proc. SPIE 6473, AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric, 64730S (8 February 2007); doi: 10.1117/12.706808
LEDs II
Proc. SPIE 6473, InGaN/GaN nanocolumn LEDs emitting from blue to red, 64730T (8 February 2007); doi: 10.1117/12.695168
Proc. SPIE 6473, Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures, 64730U (8 February 2007); doi: 10.1117/12.700303
Proc. SPIE 6473, AlGaN-based deep ultraviolet light emitting diodes with reflection layer, 64730V (8 February 2007); doi: 10.1117/12.695268
Lasers I
Proc. SPIE 6473, Recent achievements of AlInGaN based laser diodes in blue and green wavelength, 64730X (8 February 2007); doi: 10.1117/12.702998
Proc. SPIE 6473, Long lifetime cw InGaN laser diodes by molecular beam epitaxy, 64730Y (8 February 2007); doi: 10.1117/12.696721
Proc. SPIE 6473, Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope, 64730Z (8 February 2007); doi: 10.1117/12.704855
Defects
Proc. SPIE 6473, The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds, 647311 (8 February 2007); doi: 10.1117/12.705563
Proc. SPIE 6473, Defect studies in HVPE GaN by positron annihilation spectroscopy, 647312 (8 February 2007); doi: 10.1117/12.697892
Proc. SPIE 6473, Lanthanide impurity level location in GaN, AlN, and ZnO, 647313 (8 February 2007); doi: 10.1117/12.698977
FETs II
Proc. SPIE 6473, AlGaN/GaN field-plate FETs for microwave power applications, 647315 (15 February 2007); doi: 10.1117/12.707334
Proc. SPIE 6473, Insulator engineering in GaN-based MIS HFETs, 647316 (8 February 2007); doi: 10.1117/12.703659
Proc. SPIE 6473, Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy, 647317 (8 February 2007); doi: 10.1117/12.699760
Proc. SPIE 6473, Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications, 647318 (8 February 2007); doi: 10.1117/12.704201
Lasers II
Proc. SPIE 6473, TM-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region, 64731D (8 February 2007); doi: 10.1117/12.698513
Proc. SPIE 6473, Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE, 64731E (8 February 2007); doi: 10.1117/12.700652
Proc. SPIE 6473, Progress in etched facet technology for GaN and blue lasers, 64731F (8 February 2007); doi: 10.1117/12.701425
Proc. SPIE 6473, High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities, 64731G (8 February 2007); doi: 10.1117/12.707924
Proc. SPIE 6473, High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer, 64731H (8 February 2007); doi: 10.1117/12.707886
Extended Defects
Proc. SPIE 6473, Structural characterization of III-nitrides using electron microscopy, 64731J (8 February 2007); doi: 10.1117/12.706008
Proc. SPIE 6473, Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition, 64731K (8 February 2007); doi: 10.1117/12.706889
FETs III
Proc. SPIE 6473, Characterization of transient behavior of AlGaN/GaN HEMTs, 64731L (8 February 2007); doi: 10.1117/12.697685
Proc. SPIE 6473, Charge trapping on defects in AlGaN/GaN field effect transistors, 64731M (8 February 2007); doi: 10.1117/12.707740
Proc. SPIE 6473, Analytical model, simulation, and parameter extraction of AIGaN/GaN HEMT for microwave circuit applications, 64731N (8 February 2007); doi: 10.1117/12.696813
Proc. SPIE 6473, 1/f noise in the dark current of GaN QWIPs, 64731O (8 February 2007); doi: 10.1117/12.703263
LEDs IV
Proc. SPIE 6473, Light extraction analysis for GaN-based LEDs, 64731P (8 February 2007); doi: 10.1117/12.696868
Proc. SPIE 6473, Convergence of optical spectroscopic system for characterization of InGaN/GaN multi-quantum well light-emitting diodes, 64731R (8 February 2007); doi: 10.1117/12.699970
Proc. SPIE 6473, Confocal scanning electroluminescence spectro-microscope for multidimensional light-emitting property analysis, 64731S (8 February 2007); doi: 10.1117/12.700079
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