PROCEEDINGS VOLUME 6474
INTEGRATED OPTOELECTRONIC DEVICES 2007 | 20-25 JANUARY 2007
Zinc Oxide Materials and Devices II
INTEGRATED OPTOELECTRONIC DEVICES 2007
20-25 January 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6474, Front Matter: Volume 6474, 647401 (13 March 2007); doi: 10.1117/12.728530
Optical Properties
Proc. SPIE 6474, New developments in ZnO materials and devices, 647402 (20 February 2007); doi: 10.1117/12.716401
Proc. SPIE 6474, Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation, 647403 (20 February 2007); doi: 10.1117/12.711898
ZnO Doping
Proc. SPIE 6474, Metalorganic vapor phase epitaxy of ZnO: toward p-type conductivity, 647406 (20 February 2007); doi: 10.1117/12.715018
Proc. SPIE 6474, Characterization of Ag doped p-type ZnO films, 647409 (20 February 2007); doi: 10.1117/12.699613
Thin Film Epitaxy and Interfaces
Proc. SPIE 6474, Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures, 64740E (8 February 2007); doi: 10.1117/12.706300
Proc. SPIE 6474, Electrical characteristics of n-ZnO/n-6H-SiC heterostructures grown by rf-sputtering, 64740F (20 February 2007); doi: 10.1117/12.713217
Thin Film Heterostructures
Proc. SPIE 6474, Thin film growth of ZnO and its relation to substrate properties, 64740H (20 February 2007); doi: 10.1117/12.713685
Proc. SPIE 6474, P-type nitrogen- and phosphorus-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates, 64740I (20 February 2007); doi: 10.1117/12.715024
Proc. SPIE 6474, Formation of two-dimensional electron gas and enhancement of electron mobility by Zn polar ZnMgO/ZnO heterostructures, 64740J (20 February 2007); doi: 10.1117/12.714044
Proc. SPIE 6474, Advances in nonpolar ZnO homoepitaxy: 1D surface nanostructure and electron transport, 64740O (20 February 2007); doi: 10.1117/12.715020
ZnO Processing and Contact Preparation
Proc. SPIE 6474, Inductively coupled plasma etching of ZnO, 64740P (20 February 2007); doi: 10.1117/12.714048
Proc. SPIE 6474, Etching of ZnO toward the development of ZnO homostructure LEDs, 64740Q (20 February 2007); doi: 10.1117/12.712784
ZnO Based Diodes and LEDs
Proc. SPIE 6474, Surface plasmon mediated emission from metal/ZnO: an example for the fabrication of high brightness top-emitting light emitting diodes, 64740V (20 February 2007); doi: 10.1117/12.713695
ZnO Materials and Properties
Proc. SPIE 6474, Photonic properties of ZnO epilayers, 64740X (20 February 2007); doi: 10.1117/12.717785
Proc. SPIE 6474, Studies of interfacial optical and electrical properties on dielectric/ZnO systems, 647410 (20 February 2007); doi: 10.1117/12.714023
ZnO Bulk and Photonic Crystals
Proc. SPIE 6474, State-of-the-art ZnO bulk crystal growth, 647412 (20 February 2007); doi: 10.1117/12.714019
Proc. SPIE 6474, Vacancy defect distributions in bulk ZnO crystals, 647413 (20 February 2007); doi: 10.1117/12.698902
ZnO Based Thin Film Devices
Proc. SPIE 6474, Surface acoustic wave devices, 647415 (20 February 2007); doi: 10.1117/12.714700
Proc. SPIE 6474, Growth and characterization of doped ZnO films, 647417 (20 February 2007); doi: 10.1117/12.713681
Proc. SPIE 6474, Ga:ZnO based transparent conducting oxides and devices, 647418 (20 February 2007); doi: 10.1117/12.715007
Proc. SPIE 6474, Scaling and parasitic effects in ZnO transparent thin film transistors, 647419 (20 February 2007); doi: 10.1117/12.713472
Proc. SPIE 6474, The characteristics of transparent metal-ZnO contacts and ZnO-based photodiodes, 64741A (20 February 2007); doi: 10.1117/12.717769
Proc. SPIE 6474, Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates, 64741B (20 February 2007); doi: 10.1117/12.706506
ZnO Based Nanostructures I
Proc. SPIE 6474, Metal oxide nanowires for optical gas sensing, 64741E (20 February 2007); doi: 10.1117/12.713647
Proc. SPIE 6474, Enhancement of gas response of ZnO micro-nano structured films through plasma treatment, 64741G (20 February 2007); doi: 10.1117/12.699268
Proc. SPIE 6474, Fabrication and characterization of zinc oxide based rib waveguide, 64741H (20 February 2007); doi: 10.1117/12.700299
ZnO Based Nanostructures II
Proc. SPIE 6474, Morphological control of ZnO nanostructures grown on silicon, 64741I (20 February 2007); doi: 10.1117/12.714026
Proc. SPIE 6474, Optical characteristics of ZnO nanowires synthesized by nanoparticle-assisted deposition and their application to sensors, 64741K (20 February 2007); doi: 10.1117/12.698854
Proc. SPIE 6474, Patterned growth of ZnO nanorod by solution chemical method, 64741L (20 February 2007); doi: 10.1117/12.699295
Proc. SPIE 6474, Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates, 64741M (20 February 2007); doi: 10.1117/12.708835
Proc. SPIE 6474, Fabrication of well-aligned ZnO nanorods by hydrothermal process using GaN epitaxial layer, 64741N (20 February 2007); doi: 10.1117/12.699303
Spintronics and Ferroelectrics
Proc. SPIE 6474, Transition-metal- and rare-earth-doped ZnO: a comparison of optical, magnetic, and structural behavior of bulk and thin films, 64741Q (20 February 2007); doi: 10.1117/12.717788
Proc. SPIE 6474, Transport properties of non magnetic and magnetic ZnO thin films under field effect, 64741R (20 February 2007); doi: 10.1117/12.714400
Proc. SPIE 6474, Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates, 64741S (20 February 2007); doi: 10.1117/12.715217
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