PROCEEDINGS VOLUME 6479
INTEGRATED OPTOELECTRONIC DEVICES 2007 | 20-25 JANUARY 2007
Quantum Sensing and Nanophotonic Devices IV
INTEGRATED OPTOELECTRONIC DEVICES 2007
20-25 January 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6479, Front Matter: Volume 6479, 647901 (21 February 2007); doi: 10.1117/12.727013
Spintronics II
Proc. SPIE 6479, Band-gap induced electron-spin precession upon reflecting from ferromagnetic surfaces, 647905 (2 February 2007); doi: 10.1117/12.696267
Proc. SPIE 6479, Spin injection and accumulation in mesoscopic metal device structures, 647906 (2 February 2007); doi: 10.1117/12.696266
Proc. SPIE 6479, Observation of coupled magnetic vortex structure dynamics by time-resolved magneto-optical Kerr effect microscopy, 647907 (2 February 2007); doi: 10.1117/12.696264
Spintronics III
Proc. SPIE 6479, Spin-dependent tunneling through a spin-orbit-split barrier, 64790A (2 February 2007); doi: 10.1117/12.717607
Quantum Dots and Nanophotonics I
Proc. SPIE 6479, Quantitative characterization of carrier transport in nanowire photodetectors, 64790C (2 February 2007); doi: 10.1117/12.693015
Quantum Dots and Nanophotonics II
Proc. SPIE 6479, Free-standing quantum dots for electronic applications, 64790E (2 February 2007); doi: 10.1117/12.696520
Proc. SPIE 6479, Micro-pore optics: from planetary x-rays to industrial market, 64790F (21 February 2007); doi: 10.1117/12.699576
Proc. SPIE 6479, Calculations of bandstructures on the lens and pyramid-shaped InAs quantum dot for confirming the photoluminescence and photoresponse, 64790G (3 February 2007); doi: 10.1117/12.698911
Quantum Dots and Nanophotonics III
Proc. SPIE 6479, Colloidal quantum dots as optoelectronic elements, 64790I (2 February 2007); doi: 10.1117/12.710738
Detectors and Focal Plane Arrays II
Proc. SPIE 6479, Plasmon resonance based in-line fiber optic sensing, 64790N (2 February 2007); doi: 10.1117/12.693028
Proc. SPIE 6479, III-V based THz detectors and plasmon effects, 64790O (2 February 2007); doi: 10.1117/12.693068
Detectors and Focal Plane Arrays III
Proc. SPIE 6479, Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes, 64790S (21 February 2007); doi: 10.1117/12.711588
Proc. SPIE 6479, A resonant tunneling CdSe quantum dot photodetector for spectral resolution in the visible region, 64790U (2 February 2007); doi: 10.1117/12.700376
Detectors and Focal Plane Arrays IV
Proc. SPIE 6479, Demonstration of 640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane array, 64790V (2 February 2007); doi: 10.1117/12.698051
Proc. SPIE 6479, Extending hyperspectral capabilities with dualband infrared focal plane arrays, 64790W (2 February 2007); doi: 10.1117/12.714793
Proc. SPIE 6479, Uni-traveling-carrier photodiodes for high-speed detection and broadband sensing, 64790X (2 February 2007); doi: 10.1117/12.698221
Proc. SPIE 6479, Recent progress in W-structured type-II superlattice photodiodes, 64790Y (2 February 2007); doi: 10.1117/12.714794
Lasers II
Proc. SPIE 6479, Visible microdisk and photonic crystals lasers based on InGaP/InGaAlP system, 647914 (3 February 2007); doi: 10.1117/12.699777
Proc. SPIE 6479, High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 µm, 647915 (2 February 2007); doi: 10.1117/12.699208
Proc. SPIE 6479, Interband cascade distributed-feedback lasers, 647916 (2 February 2007); doi: 10.1117/12.693445
Proc. SPIE 6479, High performance THz quantum cascade laser with different optical waveguide configurations, 647917 (21 February 2007); doi: 10.1117/12.717767
Proc. SPIE 6479, Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy, 647918 (3 February 2007); doi: 10.1117/12.721327
Biosensors
Proc. SPIE 6479, Artificial hair cell and artificial lateral line, 647919 (2 February 2007); doi: 10.1117/12.710582
Nitrides I
Proc. SPIE 6479, GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 µm intersubband absorption, 64791E (21 February 2007); doi: 10.1117/12.695457
Proc. SPIE 6479, Fabrication and characterization of self-assembled InGaN quantum dots by periodic interrupted growth, 64791F (2 February 2007); doi: 10.1117/12.699293
Proc. SPIE 6479, Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications, 64791G (21 February 2007); doi: 10.1117/12.717640
Nitrides II
Proc. SPIE 6479, Optimization of nanoscale phenomena in AlGaN for improved UV emitters, 64791H (2 February 2007); doi: 10.1117/12.699181
Proc. SPIE 6479, Achieving conductive high Al-content AlGaN alloys for deep UV photonics, 64791I (6 February 2007); doi: 10.1117/12.715046
Proc. SPIE 6479, III-nitride avalanche photodiodes, 64791J (2 February 2007); doi: 10.1117/12.713774
Proc. SPIE 6479, Techniques for high quality SiO2 films, 64791K (2 February 2007); doi: 10.1117/12.716608
Hot Subjects
Proc. SPIE 6479, From highly efficient impurity-free CNT synthesis to DWNT forests, CNT solids, and super-capacitors, 64791L (21 February 2007); doi: 10.1117/12.716279
Poster Session
Proc. SPIE 6479, Size-dependent quantum dynamical influence of metal nanoparticles on surface plasmon resonance, 64791Q (2 February 2007); doi: 10.1117/12.701769
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