PROCEEDINGS VOLUME 6481
INTEGRATED OPTOELECTRONIC DEVICES 2007 | 20-25 JANUARY 2007
Quantum Dots, Particles, and Nanoclusters IV
IN THIS VOLUME

0 Sessions, 15 Papers, 0 Presentations
Front Matter  (1)
INTEGRATED OPTOELECTRONIC DEVICES 2007
20-25 January 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6481, Front Matter: Volume 6481, 648101 (27 February 2007); doi: 10.1117/12.727312
Quantum Dot Growth
Proc. SPIE 6481, Controlling the optical properties of quantum dots and nanocrystals using size, composition and strain, 648102 (2 February 2007); doi: 10.1117/12.697327
Proc. SPIE 6481, Thermal-lens study of thermo-optical properties of CdSe/ZnS quantum dots embedded into PMMA matrix, 648105 (5 February 2007); doi: 10.1117/12.701118
Quantum Dot Physics and Materials I
Proc. SPIE 6481, Maximum operating temperature and characteristic temperature of a quantum dot laser in the presence of internal loss, 648107 (6 February 2007); doi: 10.1117/12.700039
Proc. SPIE 6481, Effect of excited states on light-current characteristic of a quantum dot laser, 648108 (6 February 2007); doi: 10.1117/12.699755
Proc. SPIE 6481, Cavity QED with quantum dots in semiconductor microcavities, 648109 (6 February 2007); doi: 10.1117/12.699427
Proc. SPIE 6481, A study by GISAXS of PbTe/SiO2 multilayer deposited on Si(111), 64810A (6 February 2007); doi: 10.1117/12.701082
Quantum Dot Physics and Materials II
Proc. SPIE 6481, Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures, 64810D (22 February 2007); doi: 10.1117/12.713611
Proc. SPIE 6481, Efficient energy transfer in InAs quantum dash based tunnel-injection structures at low temperatures, 64810F (7 February 2007); doi: 10.1117/12.713616
Quantum Dot Devices
Proc. SPIE 6481, Fabrication and characterization of InAs quantum dot semiconductor optical amplifiers on InP operating at 1.5 μm, 64810H (9 February 2007); doi: 10.1117/12.700283
Proc. SPIE 6481, All-epitaxial VCSELs with tunnel QW-QD InGaAs-InAs gain medium, 64810I (6 February 2007); doi: 10.1117/12.701639
Proc. SPIE 6481, A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots, 64810K (6 February 2007); doi: 10.1117/12.711001
Novel Systems
Proc. SPIE 6481, Fabrication and third-order nonlinearity of germano-silicate glass fiber incorporated with Au nanoparticles, 64810M (9 February 2007); doi: 10.1117/12.700574
Proc. SPIE 6481, Micro-Raman spectroscopic characterization ZnO quantum dots, nanocrystals, and nanowires, 64810N (6 February 2007); doi: 10.1117/12.713648
Proc. SPIE 6481, Photoluminescence study of self-assembly of heterojunction quantum dots (HeQuaDs), 64810O (22 February 2007); doi: 10.1117/12.715304
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