PROCEEDINGS VOLUME 6484
INTEGRATED OPTOELECTRONIC DEVICES 2007 | 20-25 JANUARY 2007
Vertical-Cavity Surface-Emitting Lasers XI
IN THIS VOLUME

0 Sessions, 19 Papers, 0 Presentations
Front Matter  (1)
INTEGRATED OPTOELECTRONIC DEVICES 2007
20-25 January 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6484, Front Matter: volume 6484, 648401 (27 February 2007); doi: 10.1117/12.727414
Commercial VCSELs
Proc. SPIE 6484, Design and manufacturing of 10G GenX VCSELs at Emcore, 648402 (6 February 2007); doi: 10.1117/12.715079
Proc. SPIE 6484, VCSEL proliferation, 648403 (7 February 2007); doi: 10.1117/12.715082
Proc. SPIE 6484, High output power 670nm VCSELs, 648404 (7 February 2007); doi: 10.1117/12.715083
Proc. SPIE 6484, A TCAD approach to robust ESD design in oxide-confined VCSELs, 648405 (7 February 2007); doi: 10.1117/12.698997
Emerging VCSEL Applications
Proc. SPIE 6484, VCSELs for atomic sensors, 648406 (23 February 2007); doi: 10.1117/12.715077
Proc. SPIE 6484, New markets for VCSELS: pulsed operation of high-power devices, 648407 (7 February 2007); doi: 10.1117/12.697047
Proc. SPIE 6484, Heterogenous integrated waveguide-coupled VCSEL-based optical interconnects, 648408 (7 February 2007); doi: 10.1117/12.715071
VCSEL Integration
Proc. SPIE 6484, Monolithic integration of VCSELs and MSM photodiodes for bidirectional multimode fiber communications, 648409 (7 February 2007); doi: 10.1117/12.715078
Proc. SPIE 6484, Modulation properties of VCSEL with intracavity modulator, 64840A (7 February 2007); doi: 10.1117/12.701516
Proc. SPIE 6484, Demonstration of all optical logic gates by single/differential typed vertical cavity laser with depleted optical thyristor, 64840B (7 February 2007); doi: 10.1117/12.699599
Proc. SPIE 6484, Fabrication and characterization of individually addressable vertical-cavity surface-emitting laser arrays and integrated VCSEL/PIN detector arrays, 64840C (7 February 2007); doi: 10.1117/12.715086
VCSEL Materials and Structures
Proc. SPIE 6484, Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE, 64840E (8 February 2007); doi: 10.1117/12.697732
Proc. SPIE 6484, 1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material, 64840F (23 February 2007); doi: 10.1117/12.700403
Proc. SPIE 6484, 1.55µm InP-based electrically pumped VECSELs: comparison of buried and implanted tunnel junctions as current confinement schemes for the realization of large diameter devices, 64840G (7 February 2007); doi: 10.1117/12.700654
Proc. SPIE 6484, Numerical simulation of temperature-dependence on distributed Bragg reflector (DBR) and performance analyses for proton-implant/oxide confined VCSEL: comparison with transmission matrix, matrix calculating methods, and Macleod model, 64840I (7 February 2007); doi: 10.1117/12.698893
VCSEL Modulation
Proc. SPIE 6484, Progress and issues for high-speed vertical cavity surface emitting lasers, 64840J (26 February 2007); doi: 10.1117/12.715081
Proc. SPIE 6484, Characterization of 1.55 µm VCSELs using high-resolution and high-dynamic range measurements of the CW optical spectrum, 64840K (7 February 2007); doi: 10.1117/12.699998
Proc. SPIE 6484, Single-mode proton-implanted photonic crystal VCSELs, 64840L (7 February 2007); doi: 10.1117/12.715085
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