PROCEEDINGS VOLUME 6485
INTEGRATED OPTOELECTRONIC DEVICES 2007 | 20-25 JANUARY 2007
Novel In-Plane Semiconductor Lasers VI
INTEGRATED OPTOELECTRONIC DEVICES 2007
20-25 January 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6485, Front Matter: Volume 6485, 648501 (27 February 2007); doi: 10.1117/12.727505
Nitride Lasers
Proc. SPIE 6485, Tunable broad-area InGaN laser diodes in external cavity, 648502 (8 February 2007); doi: 10.1117/12.698285
Proc. SPIE 6485, Recent progress of high-power GaN-based laser diodes, 648503 (7 February 2007); doi: 10.1117/12.714208
Proc. SPIE 6485, Comprehensive study of reliability of InGaN-based laser diodes, 648504 (8 February 2007); doi: 10.1117/12.699001
Proc. SPIE 6485, High-power operation of inner-stripe GaN-based blue-violet laser diodes, 648505 (8 February 2007); doi: 10.1117/12.714209
Proc. SPIE 6485, Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range, 648506 (8 February 2007); doi: 10.1117/12.705867
Quantum Cascade Lasers I
Proc. SPIE 6485, Quantum-cascade lasers without injector regions, 648507 (26 February 2007); doi: 10.1117/12.697562
Proc. SPIE 6485, Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window, 648508 (27 February 2007); doi: 10.1117/12.698576
Proc. SPIE 6485, Sub-wavelength antireflection gratings on quantum cascade lasers, 64850A (26 February 2007); doi: 10.1117/12.699111
Mid-Infrared and High-Power Lasers
Proc. SPIE 6485, Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3µm, 64850B (8 February 2007); doi: 10.1117/12.698151
Proc. SPIE 6485, Narrow linewidth, high-power Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications, 64850D (8 February 2007); doi: 10.1117/12.700480
Proc. SPIE 6485, In-phase coherent coupling of tapered lasers in an external Talbot cavity, 64850E (8 February 2007); doi: 10.1117/12.700504
High-Power Lasers
Proc. SPIE 6485, High-brightness slab-coupled optical waveguide lasers, 64850F (8 February 2007); doi: 10.1117/12.706647
Proc. SPIE 6485, Very high-power 1310nm InP single mode distributed feed back laser diode with reduced linewidth, 64850G (8 February 2007); doi: 10.1117/12.701321
Quantum Dots
Proc. SPIE 6485, Recombination in quantum dot ensembles, 64850J (8 February 2007); doi: 10.1117/12.714264
Proc. SPIE 6485, Characteristics of InAs/InGaAsP quantum dot laser diodes lasing at 1.55um, 64850K (8 February 2007); doi: 10.1117/12.701534
Proc. SPIE 6485, Robust passively mode-locked quantum-dot lasers with low timing jitter, 64850L (8 February 2007); doi: 10.1117/12.714265
Quantum Cascade Lasers II
Proc. SPIE 6485, High-temperature and high-power terahertz quantum-cascade lasers, 64850M (8 February 2007); doi: 10.1117/12.714207
Proc. SPIE 6485, MOCVD growth and regrowth of quantum cascade lasers, 64850N (8 February 2007); doi: 10.1117/12.714269
Proc. SPIE 6485, High-performamce continuous wave quantum cascade lasers with widely spaced operation frequencies, 64850P (23 February 2007); doi: 10.1117/12.713734
Novel Devices
Proc. SPIE 6485, Nonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane semiconductor lasers, 64850Q (8 February 2007); doi: 10.1117/12.701648
Proc. SPIE 6485, Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um, 64850S (8 February 2007); doi: 10.1117/12.714271
Quantum Cascade Lasers III
Proc. SPIE 6485, New THz sources for bio-medical imaging, 64850U (8 February 2007); doi: 10.1117/12.714266
Proc. SPIE 6485, Nonlinear optics with intersubband transitions in high-band offset heterostructures, 64850V (8 February 2007); doi: 10.1117/12.714273
Novel Devices and Physics
Proc. SPIE 6485, High-frequency nanophotonic devices, 64850X (8 February 2007); doi: 10.1117/12.714215
Proc. SPIE 6485, High power pure-blue semiconductor lasers, 64850Z (8 February 2007); doi: 10.1117/12.725162
Silicon Optoelectronics I - Joint Session with Conference 6477
Proc. SPIE 6485, Si/Ge platform for lasers, amplifiers, and nonlinear optical devices based on the Raman effect, 648510 (8 February 2007); doi: 10.1117/12.699524
Proc. SPIE 6485, Monolithic integrated ring resonator Raman silicon laser and amplifier, 648511 (8 February 2007); doi: 10.1117/12.714210
Proc. SPIE 6485, Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si, 648513 (8 February 2007); doi: 10.1117/12.714261
Silicon Optoelectronics II - Joint Session with Conference 6477
Proc. SPIE 6485, Quantum dot lasers and integrated guided wave devices on Si, 648514 (8 February 2007); doi: 10.1117/12.714262
Proc. SPIE 6485, High-temperature silicon evanescent lasers, 648515 (26 February 2007); doi: 10.1117/12.714274
Near IR and Red Lasers
Proc. SPIE 6485, 670 nm semiconductor lasers for lithium spectroscopy with 1W, 648516 (8 February 2007); doi: 10.1117/12.697574
Proc. SPIE 6485, 670 nm tapered lasers and amplifier with output powers P greater than or equal to 1 W and nearly diffraction limited beam quality, 648517 (27 February 2007); doi: 10.1117/12.697935
Proc. SPIE 6485, Highly strained InGaAs lasers grown by MOVPE with low threshold current density, 648518 (8 February 2007); doi: 10.1117/12.700412
Proc. SPIE 6485, Lifetime prediction of diode lasers with different aging behavior, 648519 (27 February 2007); doi: 10.1117/12.713935
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