PROCEEDINGS VOLUME 6518
SPIE ADVANCED LITHOGRAPHY | FEB 25 - MAR 2 2007
Metrology, Inspection, and Process Control for Microlithography XXI
Proceedings Volume 6518 is from: Logo
SPIE ADVANCED LITHOGRAPHY
Feb 25 - Mar 2 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6518, Front Matter: Volume 6518, 651801 (21 April 2009); doi: 10.1117/12.736738
Keynote Session
Proc. SPIE 6518, Metrology challenges of double exposure and double patterning, 651802 (4 April 2007); doi: 10.1117/12.721459
Process Control I: Lithography Control
Proc. SPIE 6518, Process monitor gratings, 651803 (15 March 2007); doi: 10.1117/12.712116
Proc. SPIE 6518, Lithography process control using scatterometry metrology and semi-physical modeling, 651804 (4 April 2007); doi: 10.1117/12.711548
Proc. SPIE 6518, Comparison of back side chrome focus monitor to focus self-metrology of an immersion scanner, 651805 (4 April 2007); doi: 10.1117/12.714255
Proc. SPIE 6518, Evaluating a scatterometry-based focus monitor technique for hyper-NA lithography, 651806 (4 April 2007); doi: 10.1117/12.712470
Proc. SPIE 6518, Focus and dose controls, and their application in lithography, 651807 (4 April 2007); doi: 10.1117/12.710456
CD for Development I: OPC and Metrology
Proc. SPIE 6518, Statistical optimization of sampling plan and its relation to OPC model accuracy, 651808 (4 April 2007); doi: 10.1117/12.712725
Proc. SPIE 6518, Automatic setup of in-line critical dimension (CD) recipes during OPC qualification in a foundry environment, 651809 (4 April 2007); doi: 10.1117/12.712534
Proc. SPIE 6518, Quantification of two-dimensional structures generalized for OPC model verification, 65180A (4 April 2007); doi: 10.1117/12.713867
Proc. SPIE 6518, Setting MRC rules: balancing inspection capabilities, defect sensitivity, and OPC, 65180B (4 April 2007); doi: 10.1117/12.712418
Proc. SPIE 6518, Methodology to set up accurate OPC model using optical CD metrology and atomic force microscopy, 65180C (4 April 2007); doi: 10.1117/12.711936
Proc. SPIE 6518, SEM-contour-based OPC model calibration through the process window, 65180D (12 April 2007); doi: 10.1117/12.712232
Overlay
Proc. SPIE 6518, Meeting overlay requirements for future technology nodes with in-die overlay metrology, 65180E (4 April 2007); doi: 10.1117/12.708471
Proc. SPIE 6518, Zero-order imaging of device-sized overlay targets using scatterfield microscopy, 65180F (5 April 2007); doi: 10.1117/12.716457
Proc. SPIE 6518, Blossom overlay metrology implementation, 65180G (5 April 2007); doi: 10.1117/12.712669
Proc. SPIE 6518, The application of SMASH alignment system for 65-55-nm logic devices, 65180H (5 April 2007); doi: 10.1117/12.711059
Proc. SPIE 6518, Overlay metrology tool calibration, 65180I (5 April 2007); doi: 10.1117/12.712769
Proc. SPIE 6518, Improved overlay control through automated high order compensation, 65180J (5 April 2007); doi: 10.1117/12.712710
CDSEM: Techniques, Limits, Etc.
Proc. SPIE 6518, Monte Carlo modeling of secondary electron imaging in three dimensions, 65180K (5 April 2007); doi: 10.1117/12.712353
Proc. SPIE 6518, Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect, 65180L (5 April 2007); doi: 10.1117/12.712191
Proc. SPIE 6518, Carbon nanotube metrology in a CD SEM, 65180N (5 April 2007); doi: 10.1117/12.712352
Proc. SPIE 6518, Physical matching versus CD matching for CD SEM, 65180O (12 April 2007); doi: 10.1117/12.711768
Inspection
Proc. SPIE 6518, Developing the new ADC algorithm that enables to identify the defect source, 65180P (12 April 2007); doi: 10.1117/12.712069
Proc. SPIE 6518, Developing micro ADI methodology for new litho process monitoring strategies, 65180Q (5 April 2007); doi: 10.1117/12.711416
Proc. SPIE 6518, Immersion lithography defectivity analysis at DUV inspection wavelength, 65180S (5 April 2007); doi: 10.1117/12.712400
Proc. SPIE 6518, Innovative metrology for wafer edge defectivity in immersion lithography, 65180T (5 April 2007); doi: 10.1117/12.713347
Scatterometry Techniques, Limits, Etc.
Proc. SPIE 6518, Fundamental limits of optical critical dimension metrology: a simulation study, 65180U (5 April 2007); doi: 10.1117/12.716604
Proc. SPIE 6518, Detailed analysis of capability and limitations of CD scatterometry measurements for 65- and 45-nm nodes, 65180V (5 April 2007); doi: 10.1117/12.711233
Proc. SPIE 6518, Real-time profile shape reconstruction using dynamic scatterometry, 65180W (5 April 2007); doi: 10.1117/12.712015
Proc. SPIE 6518, Mueller polarimetry in the back focal plane, 65180X (5 April 2007); doi: 10.1117/12.708627
Proc. SPIE 6518, Modeling the effect of line profile variation on optical critical dimension metrology, 65180Z (5 April 2007); doi: 10.1117/12.704246
Standards and Techniques
Proc. SPIE 6518, TEM calibration methods for critical dimension standards, 651810 (5 April 2007); doi: 10.1117/12.713368
Proc. SPIE 6518, Image simulation and surface reconstruction of undercut features in atomic force microscopy, 651811 (5 April 2007); doi: 10.1117/12.712399
Proc. SPIE 6518, Statistical approach utilizing neural networks for CD error prediction, 651812 (5 April 2007); doi: 10.1117/12.712115
Proc. SPIE 6518, Characterizing pattern structures using x-ray reflectivity, 651813 (5 April 2007); doi: 10.1117/12.712416
Proc. SPIE 6518, Accuracy in optical image modeling, 651814 (5 April 2007); doi: 10.1117/12.711499
Proc. SPIE 6518, Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards, 651815 (5 April 2007); doi: 10.1117/12.713289
Reference Metrology and Instruments
Proc. SPIE 6518, Comparison and uncertainties of standards for critical dimension atomic force microscope tip width calibration, 651816 (5 April 2007); doi: 10.1117/12.714032
Proc. SPIE 6518, TEM validation of CD AFM image reconstruction, 651818 (5 April 2007); doi: 10.1117/12.711943
Proc. SPIE 6518, Application of carbon nanotube probes in a critical dimension atomic force microscope, 651819 (5 April 2007); doi: 10.1117/12.712326
Proc. SPIE 6518, In-line AFM characterization of STI profile at the 65 nm node with advanced carbon probes, 65181B (5 April 2007); doi: 10.1117/12.702978
Metrology Challenges
Proc. SPIE 6518, Impact of thin film metrology on the lithographic performance of 193-nm bottom antireflective coatings, 65181C (5 April 2007); doi: 10.1117/12.711488
Proc. SPIE 6518, Dielectric-thickness dependence of damage induced by electron-beam irradiation of MNOS gate pattern, 65181D (5 April 2007); doi: 10.1117/12.709094
Proc. SPIE 6518, OPC model data collection for 45-nm technology node using automatic CD-SEM offline recipe creation, 65181E (5 April 2007); doi: 10.1117/12.712718
Proc. SPIE 6518, Line width measurement below 60nm using an optical interferometer and artificial neural network, 65181F (5 April 2007); doi: 10.1117/12.712278
Proc. SPIE 6518, Metrology challenges for advanced lithography techniques, 65181G (5 April 2007); doi: 10.1117/12.713455
New Trends in Metrology
Line-edge and Line-width Roughness
Proc. SPIE 6518, Correlation length and the problem of line width roughness, 65181N (5 April 2007); doi: 10.1117/12.712283
Proc. SPIE 6518, Line edge roughness characterization of sub-50nm structures using CD-SAXS: round-robin benchmark results, 65181O (5 April 2007); doi: 10.1117/12.725380
Proc. SPIE 6518, Characterization of line-edge roughness in Cu/low-k interconnect pattern, 65181P (5 April 2007); doi: 10.1117/12.710401