Front Matter
Proc. SPIE 6519, Front Matter: Volume 6519, 651901 (26 April 2007); doi: 10.1117/12.732159
Invited Session
Proc. SPIE 6519, Identifying materials limits of chemically amplified photoresists, 651902 (12 April 2007); doi: 10.1117/12.720424
Proc. SPIE 6519, Emerging patterning materials: trends, challenges, and opportunities in patterning and materials by design, 651903 (6 April 2007); doi: 10.1117/12.721750
Materials and Processes for Immersion Lithography I
Proc. SPIE 6519, Fluoro-alcohol materials with tailored interfacial properties for immersion lithography, 651904 (2 April 2007); doi: 10.1117/12.712768
Proc. SPIE 6519, Development of non-topcoat resist polymers for 193-nm immersion lithography, 651905 (2 April 2007); doi: 10.1117/12.712057
Proc. SPIE 6519, Building an immersion topcoat from the ground up: materials perspective, 651907 (9 April 2007); doi: 10.1117/12.712095
Proc. SPIE 6519, Novel materials design for immersion lithography, 651908 (9 April 2007); doi: 10.1117/12.712096
Materials and Processes for Immersion Lithography II
Proc. SPIE 6519, Novel high-index resists for 193-nm immersion lithography and beyond, 651909 (22 March 2007); doi: 10.1117/12.715108
Proc. SPIE 6519, Screening of second-generation high-index liquids, 65190A (30 March 2007); doi: 10.1117/12.713110
Proc. SPIE 6519, High-refractive index material design for ArF immersion lithography, 65190B (9 April 2007); doi: 10.1117/12.711988
Proc. SPIE 6519, Adapting immersion exposure to mass production by adopting a cluster of novel resist-coating/developing and immersion-exposure equipment, 65190C (2 April 2007); doi: 10.1117/12.711853
Proc. SPIE 6519, Immersion defectivity control by optimizing immersion materials and processes, 65190D (29 March 2007); doi: 10.1117/12.711466
Proc. SPIE 6519, Measurement and evaluation of water uptake by resists, top coats, stacks, and correlation with watermark defects, 65190E (4 April 2007); doi: 10.1117/12.713150
Resist Materials
Proc. SPIE 6519, High-performance 193-nm photoresists based on fluorosulfonamide, 65190F (23 March 2007); doi: 10.1117/12.712231
Proc. SPIE 6519, Novel diamantane polymer platform for enhanced etch resistance, 65190G (9 April 2007); doi: 10.1117/12.713111
Proc. SPIE 6519, Hybrid optical: electron-beam resists, 65190H (23 March 2007); doi: 10.1117/12.714370
Proc. SPIE 6519, Evaluation of immersion lithography processes for 55-nm node logic devices, 65190I (3 April 2007); doi: 10.1117/12.711108
Proc. SPIE 6519, Photo-deprotection resist based on photolysis of o-nitrobenzyl phenol ether; challenge to half-pitch 22 nm using near-field lithography, 65190J (2 April 2007); doi: 10.1117/12.711276
ARC/Multilayer Process
Proc. SPIE 6519, Enhancing photoresist performance with an adhesion promoting photo-acid generator, 65190K (21 March 2007); doi: 10.1117/12.712359
Proc. SPIE 6519, Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography, 65190L (2 April 2007); doi: 10.1117/12.713436
Proc. SPIE 6519, Spin-on trilayer approaches to high NA 193nm lithography, 65190M (2 April 2007); doi: 10.1117/12.712700
Proc. SPIE 6519, Progress of hard mask material for multi-layer stack application, 65190N (11 April 2007); doi: 10.1117/12.711941
Proc. SPIE 6519, Silicon-based anti-reflective spin-on hardmask materials with improved storage stability for 193-nm lithography, 65190O (30 March 2007); doi: 10.1117/12.711866
Proc. SPIE 6519, Novel developers for positive tone EUV photoresists, 65190P (30 March 2007); doi: 10.1117/12.712377
Resist Processing
Proc. SPIE 6519, The application of high-refractive index photoresist for 32-nm device level imaging, 65190Q (6 April 2007); doi: 10.1117/12.714315
Proc. SPIE 6519, Performance of chemically amplified resists at half-pitch of 45 nm and below, 65190R (2 April 2007); doi: 10.1117/12.706887
Proc. SPIE 6519, Evaluation of ArF lithography for 45-nm node implant layers, 65190S (2 April 2007); doi: 10.1117/12.712318
Proc. SPIE 6519, Characterization of photo-acid redeposition in 193-nm photoresists, 65190T (22 March 2007); doi: 10.1117/12.712338
Proc. SPIE 6519, A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond, 65190U (21 March 2007); doi: 10.1117/12.713401
Resist Processes and Simulation
Proc. SPIE 6519, A novel method for characterizing resist performance, 65190V (21 March 2007); doi: 10.1117/12.712861
Proc. SPIE 6519, The tri-lateral challenge of resolution, photospeed, and LER: scaling below 50nm?, 65190W (21 March 2007); doi: 10.1117/12.712152
Proc. SPIE 6519, PAG segregation during exposure affecting innate material roughness, 65190X (11 April 2007); doi: 10.1117/12.713892
Proc. SPIE 6519, Mechanistic simulation of line-edge roughness, 65190Y (23 March 2007); doi: 10.1117/12.712868
Proc. SPIE 6519, The characterization of photoresist for accurate simulation beyond Gaussian diffusion, 65190Z (23 March 2007); doi: 10.1117/12.712511
Resist Fundamentals
Proc. SPIE 6519, Direct measurement of the in-situ developed latent image: the residual swelling fraction, 651910 (22 March 2007); doi: 10.1117/12.712311
Proc. SPIE 6519, Fundamental limits to EUV photoresist, 651911 (22 March 2007); doi: 10.1117/12.712346
Proc. SPIE 6519, Etch resistance: comparison and development of etch rate models, 651912 (22 March 2007); doi: 10.1117/12.712242
Proc. SPIE 6519, Dissolution behavior of resist polymers studied by Quartz-Crystal-Microbalance method II, 651913 (6 April 2007); doi: 10.1117/12.711926
LER
Proc. SPIE 6519, Component segregation in model chemically amplified resists, 651915 (21 March 2007); doi: 10.1117/12.711152
Proc. SPIE 6519, FTIR measurements of compositional heterogeneities, 651916 (3 April 2007); doi: 10.1117/12.712659
Proc. SPIE 6519, Changes in resist glass transition temperatures due to exposure, 651917 (21 March 2007); doi: 10.1117/12.713886
Proc. SPIE 6519, A study on the material design for the reduction of LWR, 651918 (22 March 2007); doi: 10.1117/12.712157
Proc. SPIE 6519, Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer, 651919 (11 April 2007); doi: 10.1117/12.712319
Proc. SPIE 6519, Impact of line-width roughness on Intel’s 65-nm process devices, 65191A (22 March 2007); doi: 10.1117/12.712955
NGL
Proc. SPIE 6519, Impact of curing kinetics and materials properties on imprint characteristics of resists for UV nano-imprint lithography, 65191C (22 March 2007); doi: 10.1117/12.712298
Proc. SPIE 6519, Material design of negative-tone polyphenol resist for EUV and EB lithography, 65191D (22 March 2007); doi: 10.1117/12.711759
Proc. SPIE 6519, Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists, 65191E (23 March 2007); doi: 10.1117/12.713369
Proc. SPIE 6519, Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL, 65191F (23 March 2007); doi: 10.1117/12.712143
Novel Processes/Applications
Proc. SPIE 6519, Self-aligned, self-assembled organosilicate line patterns of ~20nm half-pitch from block-copolymer mediated self assembly, 65191H (21 March 2007); doi: 10.1117/12.711687
Proc. SPIE 6519, Gray-scale lithography of photosensitive polyimide and its graphitization, 65191I (21 March 2007); doi: 10.1117/12.711167
Proc. SPIE 6519, A novel top surface imaging approach utilizing direct-area selective atomic layer deposition of hardmasks, 65191J (31 March 2007); doi: 10.1117/12.712458
Proc. SPIE 6519, Novel photodefinable low-k dielectric polymers based on polybenzoxazines, 65191K (12 April 2007); doi: 10.1117/12.713011
Proc. SPIE 6519, Patterning of biomolecules on a biocompatible nonchemically amplified resist, 65191L (12 April 2007); doi: 10.1117/12.712102
Joint Session with Conference 6517 on EUV Resists
Proc. SPIE 6519, Resist evaluation for EUV application at ASET, 65191M (12 April 2007); doi: 10.1117/12.711980
Proc. SPIE 6519, Molecular glass photoresists containing photoacid generator functionality: a route to a single-molecule photoresist, 65191N (21 March 2007); doi: 10.1117/12.712928
Proc. SPIE 6519, The resist materials study for the outgassing reduction and LWR improvement in EUV lithography, 65191O (2 April 2007); doi: 10.1117/12.711864