Proceedings Volume 6520 is from: Logo
SPIE ADVANCED LITHOGRAPHY
25 February - 2 March 2007
San Jose, California, United States
Front Matter
Proc. SPIE 6520, Front Matter: Volume 6520, 652001 (17 April 2007); doi: 10.1117/12.738769
Past, Present, and Future Directions
Proc. SPIE 6520, Marching of the microlithography horses: electron, ion, and photon: past, present, and future, 652002 (28 March 2007); doi: 10.1117/12.720628
Proc. SPIE 6520, Future directions for CMOS device technology development from a system application perspective, 652003 (27 March 2007); doi: 10.1117/12.720629
Proc. SPIE 6520, Optical lithography: 40 years and holding, 652004 (27 March 2007); doi: 10.1117/12.720631
Immersion Status and Performance
Proc. SPIE 6520, Defects, overlay, and focus performance improvements with five generations of immersion exposure systems, 652005 (19 March 2007); doi: 10.1117/12.713577
Proc. SPIE 6520, Current status of high-index immersion lithography development, 652006 (26 March 2007); doi: 10.1117/12.711252
Proc. SPIE 6520, Integrating immersion lithography in 45-nm logic manufacturing, 652007 (27 March 2007); doi: 10.1117/12.715987
Proc. SPIE 6520, Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2, 652008 (27 March 2007); doi: 10.1117/12.711049
Proc. SPIE 6520, Benefit of ArF immersion lithography in 55 nm logic device manufacturing, 652009 (26 March 2007); doi: 10.1117/12.711054
Hyper-NA and Polarization
Proc. SPIE 6520, Snell or Fresnel: the influence of material index on hyper-NA lithography, 65200A (26 March 2007); doi: 10.1117/12.713203
Proc. SPIE 6520, Hyper NA polarized imaging of 45nm DRAM, 65200B (26 March 2007); doi: 10.1117/12.712442
Proc. SPIE 6520, Pushing the boundary: low-k1 extension by polarized illumination, 65200C (26 March 2007); doi: 10.1117/12.713873
Proc. SPIE 6520, Modeling polarization for hyper-NA lithography tools and masks, 65200D (27 March 2007); doi: 10.1117/12.712272
Proc. SPIE 6520, Polarization-dependent proximity effects, 65200E (26 March 2007); doi: 10.1117/12.711626
Proc. SPIE 6520, The impact of projection lens polarization properties on lithographic process at hyper-NA, 65200F (26 March 2007); doi: 10.1117/12.722317
Double Patterning Technology
Proc. SPIE 6520, Pitch doubling through dual-patterning lithography challenges in integration and litho budgets, 65200G (27 March 2007); doi: 10.1117/12.714278
Proc. SPIE 6520, Issues and challenges of double patterning lithography in DRAM, 65200H (26 March 2007); doi: 10.1117/12.712035
Proc. SPIE 6520, Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC, 65200I (26 March 2007); doi: 10.1117/12.713393
Proc. SPIE 6520, The modeling of double patterning lithographic processes, 65200J (26 March 2007); doi: 10.1117/12.714137
Proc. SPIE 6520, Dark Field Double Dipole Lithography (DDL) for back-end-of-line processes, 65200K (26 March 2007); doi: 10.1117/12.713277
Optimization, Control, and Performance
Proc. SPIE 6520, Evaluating the performance of a 193-nm hyper-NA immersion scanner using scatterometry, 65200L (26 March 2007); doi: 10.1117/12.715971
Proc. SPIE 6520, Distinguishing dose, focus, and blur for lithography characterization and control, 65200M (26 March 2007); doi: 10.1117/12.712155
Proc. SPIE 6520, Patterning control budgets for the 32-nm generation incorporating lithography, design, and RET variations, 65200N (27 March 2007); doi: 10.1117/12.715166
Proc. SPIE 6520, Control of polarization and apodization with film materials on photomasks and pellicles for high NA imaging performance, 65200O (27 March 2007); doi: 10.1117/12.712424
Proc. SPIE 6520, Global optimization of masks, including film stack design to restore TM contrast in high NA TCC's, 65200P (27 March 2007); doi: 10.1117/12.713050
Proc. SPIE 6520, A solution for exposure tool optimization at the 65-nm node and beyond, 65200Q (26 March 2007); doi: 10.1117/12.711355
OPC and Advanced Modeling I
Proc. SPIE 6520, Fast and accurate 3D mask model for full-chip OPC and verification, 65200R (26 March 2007); doi: 10.1117/12.712171
Proc. SPIE 6520, Process window and interlayer aware OPC for the 32-nm node, 65200S (27 March 2007); doi: 10.1117/12.714442
Proc. SPIE 6520, OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect, 65200T (26 March 2007); doi: 10.1117/12.711832
Proc. SPIE 6520, Generalized inverse lithography methods for phase-shifting mask design, 65200U (27 March 2007); doi: 10.1117/12.711559
Proc. SPIE 6520, Visualizing the impact of the illumination distribution upon imaging, and applying the insights gained, 65200V (27 March 2007); doi: 10.1117/12.716412
Image Quality and Characterization
Proc. SPIE 6520, Sources and scaling laws for LER and LWR, 65200X (27 March 2007); doi: 10.1117/12.712248
Proc. SPIE 6520, Polarization aberration analysis using Pauli-Zernike representation, 65200Y (26 March 2007); doi: 10.1117/12.711336
Proc. SPIE 6520, Best focus determination: bridging the gap between optical and physical topography, 65200Z (27 March 2007); doi: 10.1117/12.712169
Proc. SPIE 6520, Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node, 652011 (26 March 2007); doi: 10.1117/12.711052
Challenges for Water Immersion
Proc. SPIE 6520, Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects, 652012 (26 March 2007); doi: 10.1117/12.712527
Proc. SPIE 6520, Optical error sensitivities of immersion lithography, 652013 (26 March 2007); doi: 10.1117/12.712333
Proc. SPIE 6520, Contamination and particle control system in immersion exposure tool, 652014 (26 March 2007); doi: 10.1117/12.711289
Proc. SPIE 6520, Extending immersion lithography to the 32-nm node, 652015 (27 March 2007); doi: 10.1117/12.716807
Proc. SPIE 6520, Immersion defectivity study with volume production immersion lithography tool, 652016 (26 March 2007); doi: 10.1117/12.711464
Joint Session with conference 6521 on Computational Lithography
Proc. SPIE 6520, Lossless compression algorithm for hierarchical IC layout data, 652017 (27 March 2007); doi: 10.1117/12.711134
Proc. SPIE 6520, Advances in compute hardware platforms for computational lithography, 652018 (27 March 2007); doi: 10.1117/12.712397
Proc. SPIE 6520, SEM image contouring for OPC model calibration and verification, 652019 (27 March 2007); doi: 10.1117/12.714389
Advanced Resolution Enhancement
Proc. SPIE 6520, Phase-shifted assist feature OPC for sub-45-nm node optical lithography, 65201A (27 March 2007); doi: 10.1117/12.712445
Proc. SPIE 6520, The random contact hole solutions for future technology nodes, 65201B (26 March 2007); doi: 10.1117/12.712447
Proc. SPIE 6520, Patterning with amorphous carbon spacer for expanding the resolution limit of current lithography tool, 65201C (27 March 2007); doi: 10.1117/12.707275
Proc. SPIE 6520, Ultra-low <i>k</i><sub>1</sub> oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method, 65201E (26 March 2007); doi: 10.1117/12.709133
Proc. SPIE 6520, RET application in 45-nm node and 32-nm node contact hole dry ArF lithography process development, 65201F (27 March 2007); doi: 10.1117/12.707782
Mask Effect and Technologies
Proc. SPIE 6520, Pupil plane analysis on AIMS 45-193i for advanced photomasks, 65201H (27 March 2007); doi: 10.1117/12.711664
Proc. SPIE 6520, The impact of the mask stack and its optical parameters on the imaging performance, 65201I (27 March 2007); doi: 10.1117/12.709351
Proc. SPIE 6520, Mask 3D effect on 45-nm imaging using attenuated PSM, 65201J (26 March 2007); doi: 10.1117/12.710549
Proc. SPIE 6520, Effects of reticle birefringence on 193-nm lithography, 65201K (26 March 2007); doi: 10.1117/12.712251
Immersion Advancements beyond Water
Proc. SPIE 6520, Early look into device level imaging with beyond water immersion, 65201L (2 April 2007); doi: 10.1117/12.714341
Proc. SPIE 6520, Extending immersion lithography with high-index materials: results of a feasibility study, 65201M (27 March 2007); doi: 10.1117/12.711139