PROCEEDINGS VOLUME 6533
EUROPEAN MASK AND LITHOGRAPHY CONFERENCE2007 | 22-25 JANUARY 2007
23rd European Mask and Lithography Conference
EUROPEAN MASK AND LITHOGRAPHY CONFERENCE2007
22-25 January 2007
Grenoble, France
Plenary Session
Proc. SPIE 6533, Front Matter: Volume 6533, 653301 (8 May 2007); doi: 10.1117/12.731800
Proc. SPIE 6533, Mask industry assessment trend analysis 2006, 653303 (3 May 2007); doi: 10.1117/12.731817
Hyper NA and Immersion
Proc. SPIE 6533, Current status of water immersion lithography and prospect of higher index method, 653304 (3 May 2007); doi: 10.1117/12.731916
Proc. SPIE 6533, Contact angles and liquid loss behavior of high index fluids, 653305 (3 May 2007); doi: 10.1117/12.734338
Proc. SPIE 6533, Characteristics optimization of mask materials for Hyper-NA lithography, 653306 (3 May 2007); doi: 10.1117/12.734498
Proc. SPIE 6533, Investigation of hyper-NA scanner emulation for photomask CDU performance, 653307 (3 May 2007); doi: 10.1117/12.736325
Proc. SPIE 6533, Investigation on immersion defectivity root cause, 653308 (3 May 2007); doi: 10.1117/12.736328
Inspection and Defect Printability
Proc. SPIE 6533, Programmed defects study on masks for 45nm immersion lithography using the novel AIMS 45-193i, 653309 (3 May 2007); doi: 10.1117/12.736530
Proc. SPIE 6533, Production evaluation of automated reticle defect printability prediction application, 65330A (3 May 2007); doi: 10.1117/12.736495
Mask Patterning and Process
Proc. SPIE 6533, Improved CD uniformity for advanced masks using the Sigma7500 pattern generator and ProcessEqualizer, 65330C (3 May 2007); doi: 10.1117/12.736923
Proc. SPIE 6533, Time resolved evolution of the etch bias, 65330D (3 May 2007); doi: 10.1117/12.736925
Metrology I
Proc. SPIE 6533, Innovative application of the RCWA method for the ultra-sensitive transmittance-based CD measurements on phase-shift masks, 65330F (3 May 2007); doi: 10.1117/12.736963
Proc. SPIE 6533, The effect of intra-field CD uniformity control (CDC) on mask birefringence, 65330G (3 May 2007); doi: 10.1117/12.736965
Proc. SPIE 6533, Metrology capabilities and performance of the new DUV scatterometer of the PTB, 65330H (3 May 2007); doi: 10.1117/12.736968
Proc. SPIE 6533, First measurement data obtained on the new Vistec LMS IPRO4, 65330I (3 May 2007); doi: 10.1117/12.736972
Maskless Technologies I
Proc. SPIE 6533, Electron beam direct write: shaped beam overcomes resolution concerns, 65330J (3 May 2007); doi: 10.1117/12.736974
Maskless Technologies II
Proc. SPIE 6533, Data preparation for EBDW, 65330K (3 May 2007); doi: 10.1117/12.736976
RET
Proc. SPIE 6533, Masks for flash memory gates for the 45nm node: binary or attenuated?, 65330L (3 May 2007); doi: 10.1117/12.737109
Proc. SPIE 6533, Electrical test structures for the characterisation of optical proximity correction, 65330M (3 May 2007); doi: 10.1117/12.737112
Proc. SPIE 6533, Improvement of model kernel representation in process simulation by taking pattern correlation into account, 65330N (3 May 2007); doi: 10.1117/12.737117
NIL
Proc. SPIE 6533, Investigation of capillary bridges growth in NIL process, 65330O (3 May 2007); doi: 10.1117/12.736914
Proc. SPIE 6533, Electron beam directed repair of fused silica imprint templates, 65330P (3 May 2007); doi: 10.1117/12.736921
Proc. SPIE 6533, Challenges of residual layer minimisation in thermal nanoimprint lithography, 65330Q (3 May 2007); doi: 10.1117/12.736926
Proc. SPIE 6533, Hybrid nanoimprint for micro-nano mixture structure, 65330R (3 May 2007); doi: 10.1117/12.736928
Metrology II
Proc. SPIE 6533, Calibration of CD mask standards for the 65-nm node: CoG and MoSi, 65330S (3 May 2007); doi: 10.1117/12.736931
Proc. SPIE 6533, Characterization of photo masks by X3D AFM, 65330T (3 May 2007); doi: 10.1117/12.736936
Proc. SPIE 6533, An empirical approach adressing the transfer of mask placement errors during exposure, 65330U (3 May 2007); doi: 10.1117/12.736958
Mask Management and Simulation
Proc. SPIE 6533, Achieving mask order processing automation, interoperability and standardization based on P10, 65330V (3 May 2007); doi: 10.1117/12.736964
Proc. SPIE 6533, Benchmark and gap analysis of current mask carriers vs future requirements: example of the carrier contamination, 65330W (3 May 2007); doi: 10.1117/12.736973
Proc. SPIE 6533, Reticle haze: an industrial approach, 65330X (3 May 2007); doi: 10.1117/12.736977
Proc. SPIE 6533, Fast near field simulation of optical and EUV masks using the waveguide method, 65330Y (3 May 2007); doi: 10.1117/12.736978
EUV I Masks
Proc. SPIE 6533, EUV mask infrastructure challenges, 65330Z (3 May 2007); doi: 10.1117/12.737154
Proc. SPIE 6533, Enabling defect-free masks for extreme ultraviolet lithography, 653310 (3 May 2007); doi: 10.1117/12.737160
Proc. SPIE 6533, Hydrogenated water application for particle removal on EUV mask blank substrates, 653311 (3 May 2007); doi: 10.1117/12.737174
Proc. SPIE 6533, Assessment of EUV reticle blank availability enabling the use of EUV tools today and in the future, 653313 (3 May 2007); doi: 10.1117/12.737179
Proc. SPIE 6533, Predicting and correcting for image placement errors during the fabrication of EUVL masks, 653314 (3 May 2007); doi: 10.1117/12.737181
EUV II Sources, Optics and Resists
Proc. SPIE 6533, Status report on EUV source development and EUV source applications in EUVL, 653315 (3 May 2007); doi: 10.1117/12.737183
Proc. SPIE 6533, Surface chemistry of Ru: relevance to optics lifetime in EUVL, 653316 (3 May 2007); doi: 10.1117/12.737185
Proc. SPIE 6533, Progress in EUV photoresist technology, 653317 (3 May 2007); doi: 10.1117/12.737189
Proc. SPIE 6533, Quantitative measurement of EUV resist outgassing, 653318 (3 May 2007); doi: 10.1117/12.737192
Poster Session
Proc. SPIE 6533, Electron beam lithography simulation based on a single convolution approach: application for sub-45nm nodes, 653319 (3 May 2007); doi: 10.1117/12.736519
Proc. SPIE 6533, Aerial imaging performance of ALTA4700 printed mask for 130nm design rule, 65331A (3 May 2007); doi: 10.1117/12.736524
Proc. SPIE 6533, A complete set of the special process equipment for the defect-free production of reticles, 65331B (3 May 2007); doi: 10.1117/12.736525
Proc. SPIE 6533, Mask qualification strategies in a wafer fab, 65331C (3 May 2007); doi: 10.1117/12.736529
Proc. SPIE 6533, Damage free megasonic resonance cleaning for the 45nm design rule, 65331D (3 May 2007); doi: 10.1117/12.736531
Proc. SPIE 6533, Resist and BARC outgassing measured by TD-GCMS: investigation during the exposure or the bake steps of the lithographic process, 65331E (3 May 2007); doi: 10.1117/12.736532
Proc. SPIE 6533, Effects of heat curing on adhesive strength between microsized SU-8 and Si substrate, 65331F (3 May 2007); doi: 10.1117/12.736535
Proc. SPIE 6533, Evaluation of an alternative UV-NIL mold fabrication process, 65331G (3 May 2007); doi: 10.1117/12.736537
Proc. SPIE 6533, New approach for defect inspection on large area masks, 65331H (3 May 2007); doi: 10.1117/12.736541
Proc. SPIE 6533, Accelerating physical verification using STPRL: a novel language for test pattern generation, 65331I (3 May 2007); doi: 10.1117/12.736545
Proc. SPIE 6533, Birefringence variation of quartz substrates during mask process, 65331J (3 May 2007); doi: 10.1117/12.736526
Proc. SPIE 6533, A novel model building flow for the simulation of proximity effects of mask processes, 65331N (3 May 2007); doi: 10.1117/12.736549
Proc. SPIE 6533, Focused electron beam induced deposition of DUV transparent SIO2, 65331Q (3 May 2007); doi: 10.1117/12.736918
Proc. SPIE 6533, Actinic inspection of sub-50 nm EUV mask blank defects, 65331R (3 May 2007); doi: 10.1117/12.736920
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