PROCEEDINGS VOLUME 6596
ADVANCED OPTICAL MATERIALS, TECHNOLOGIES, AND DEVICES | 12-14 SEPTEMBER 2006
Advanced Optical Materials, Technologies, and Devices
ADVANCED OPTICAL MATERIALS, TECHNOLOGIES, AND DEVICES
12-14 September 2006
Vilnius, Lithuania
Volume 6596 Front Matter
Proc. SPIE 6596, Volume 6596 Front Matter, 659601 (14 February 2007); doi: 10.1117/12.728813
Optoelectronic Materials and Devices
Proc. SPIE 6596, Light emission properties of nanoparticles doped with transition metal and rare earth ions, 659602 (25 January 2007); doi: 10.1117/12.726353
Proc. SPIE 6596, Influence of molecular chain orientation on optical and carrier transport properties of polymer blends, 659603 (25 January 2007); doi: 10.1117/12.726355
Proc. SPIE 6596, Digitization of the optical fields in informatics optics, 659604 (25 January 2007); doi: 10.1117/12.726356
Proc. SPIE 6596, Stimulated emission and optical gain in nitride-based compounds and quantum structures, 659605 (25 January 2007); doi: 10.1117/12.726357
Proc. SPIE 6596, Transverse patterns of mini-cavity optical parametric oscillator with seed injection, 659606 (25 January 2007); doi: 10.1117/12.726359
Proc. SPIE 6596, Sensitivity of a spectral device based on acousto-optic tunable filter, 659607 (25 January 2007); doi: 10.1117/12.726360
Proc. SPIE 6596, High photosensitive nanocrystalline PbTe films, 659608 (14 February 2007); doi: 10.1117/12.726361
Proc. SPIE 6596, A 60 GHz microwave resonance investigation of shallowly formed InAs quantum dots embedded in GaAs, 659609 (25 January 2007); doi: 10.1117/12.726363
Proc. SPIE 6596, Generation of coherent terahertz radiation due to optical-phonon emission assisted transit-time resonance in quantum wells and heterolayers, 65960A (25 January 2007); doi: 10.1117/12.726365
Proc. SPIE 6596, Variation of the properties of 4H-SiC radiation detectors upon irradiation by 24 GeV protons, 65960B (25 January 2007); doi: 10.1117/12.726366
Proc. SPIE 6596, Analysis of photoelectrical properties and current transient behaviour in TIBr, 65960C (25 January 2007); doi: 10.1117/12.726367
Proc. SPIE 6596, Differences and likenesses between demands to media intended for image and hologram recording, 65960D (25 January 2007); doi: 10.1117/12.726368
Proc. SPIE 6596, Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors, 65960E (25 January 2007); doi: 10.1117/12.726369
Proc. SPIE 6596, GaAs/AlAs quantum wells for selective terahertz sensing: study by differential surface pothovoltage spectroscopy, 65960F (25 January 2007); doi: 10.1117/12.726400
Proc. SPIE 6596, Measurement of the magnetic component of microwave electromagnetic radiation via sub-harmonic mixing, 65960G (25 January 2007); doi: 10.1117/12.726401
Proc. SPIE 6596, Synthesis and properties of PbSexS1-x alloyed nanocrystals, 65960H (25 January 2007); doi: 10.1117/12.726402
Proc. SPIE 6596, Synthesis and characterization of silver nanoparticles, 65960I (25 January 2007); doi: 10.1117/12.726403
Proc. SPIE 6596, Some properties of a room temperature THz detection array, 65960J (25 January 2007); doi: 10.1117/12.726404
Proc. SPIE 6596, Dot-matrix holographic recording in amorphous chalcogenide films, 65960K (25 January 2007); doi: 10.1117/12.726405
Semiconductors and Laser Technology
Proc. SPIE 6596, Optical and terahertz spectroscopy of doped GaAs/AlAs quantum wells, 65960L (25 January 2007); doi: 10.1117/12.726406
Proc. SPIE 6596, Pattering of ITO with picosecond lasers, 65960M (25 January 2007); doi: 10.1117/12.726407
Proc. SPIE 6596, GaAs/AlGaAs structures with δ-doped layer for microwave detection, 65960N (25 January 2007); doi: 10.1117/12.726409
Proc. SPIE 6596, Free-hole spin precession trajectories in A3B5 compounds, 65960O (25 January 2007); doi: 10.1117/12.726411
Proc. SPIE 6596, Destruction of the nano-size solid particles under femtosecond laser pulse action, 65960P (25 January 2007); doi: 10.1117/12.726412
Proc. SPIE 6596, Ripple formation at laser ablation of chromium thin film, 65960Q (25 January 2007); doi: 10.1117/12.726445
Proc. SPIE 6596, Mapping of differently doped InP wafers by nanosecond and picosecond four-wave mixing techniques, 65960R (25 January 2007); doi: 10.1117/12.726447
Proc. SPIE 6596, Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling, 65960S (25 January 2007); doi: 10.1117/12.726452
Optical and Fiberoptical Devices
Proc. SPIE 6596, Compact multi-functional skin spectrometry set-up, 65960T (25 January 2007); doi: 10.1117/12.726455
Proc. SPIE 6596, Fundamentals and main features of the advanced reflection noncontact two-fiber optopairs displacememnt sensor, 65960U (25 January 2007); doi: 10.1117/12.726457
Proc. SPIE 6596, Investigation and comparison of modeling and experimental results for the fiber optopair reflection noncontact displacement sensor, 65960V (25 January 2007); doi: 10.1117/12.726461
Proc. SPIE 6596, Radiation of novel type emitted by microchip laser, 65960W (25 January 2007); doi: 10.1117/12.726463
Proc. SPIE 6596, Nanosecond and picosecond pulse transmission in optical fibres, 65960X (25 January 2007); doi: 10.1117/12.726467
Proc. SPIE 6596, Phase shift detection of surface plasmon using spectral ellipsometer, 65960Y (25 January 2007); doi: 10.1117/12.726473
Nanotechnology Based Multifunctional Materials
Proc. SPIE 6596, Chemical control over surface atomic structure and electronic properties of III-V semiconductors, 65960Z (25 January 2007); doi: 10.1117/12.726476
Proc. SPIE 6596, Surface plasmon resonance method: new applications to sorption kinetics analysis, 659610 (25 January 2007); doi: 10.1117/12.726478
Proc. SPIE 6596, Studies of composite system of iron porphyrin immobilized on aminosilanized Si, 659611 (25 January 2007); doi: 10.1117/12.726485
Proc. SPIE 6596, Phonon sidebands in photoluminescence of beryllium delta-doped GaAs/AlAs multiple quantum wells, 659612 (25 January 2007); doi: 10.1117/12.726488
Proc. SPIE 6596, Formation of low energy tails in silicon delta-doped GaAs/AlAs multiple quantum wells, 659613 (25 January 2007); doi: 10.1117/12.726489
Proc. SPIE 6596, Group-delay dispersion measurements of laser mirrors using white-light interferometry, 659614 (25 January 2007); doi: 10.1117/12.726490
Proc. SPIE 6596, Effect of strong electric field on electrical characteristics of two-terminal porous silicon structures, 659615 (14 February 2007); doi: 10.1117/12.726491
Proc. SPIE 6596, Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films, 659616 (25 January 2007); doi: 10.1117/12.726492
Proc. SPIE 6596, Electric field effect on electrical memory of inhomogeneously strained La0.67Ca0.33MnO3 films, 659617 (25 January 2007); doi: 10.1117/12.726494
Proc. SPIE 6596, Influence on annealing on atomic layer deposited Cr2O3-TiO2 thin films, 659618 (25 January 2007); doi: 10.1117/12.726496
Proc. SPIE 6596, Quantum well interface broadening effects, 659619 (25 January 2007); doi: 10.1117/12.726499
Proc. SPIE 6596, Modification of band gap in surface layer in Cd1-xZnxTe by YAG: Nd+3 laser radiation, 65961A (25 January 2007); doi: 10.1117/12.726500
Inorganic and organic materials
Proc. SPIE 6596, Plasma injection as techniques to study charge carrier transport and recombination in organic solar cells and LED's, 65961B (25 January 2007); doi: 10.1117/12.726505
Proc. SPIE 6596, Sub-bandgap light hologram recording in the amorphous chalcogenides, 65961C (25 January 2007); doi: 10.1117/12.726508
Proc. SPIE 6596, Formation of carbon coatings employing plasma torch from argon-acetylene gas mixture, 65961D (25 January 2007); doi: 10.1117/12.726511
Proc. SPIE 6596, Magnetic circular dichroism of iron porphyrin, 65961E (25 January 2007); doi: 10.1117/12.726514
Proc. SPIE 6596, Heavy-ion induced damage and reduction of dislocation mobility in LiF single crystals, 65961F (25 January 2007); doi: 10.1117/12.726516
Proc. SPIE 6596, Geometrical structure of small Co nanoparticles, 65961G (25 January 2007); doi: 10.1117/12.726518
Proc. SPIE 6596, Film's forming materials for laser optics, 65961H (25 January 2007); doi: 10.1117/12.726519
Proc. SPIE 6596, Laser-induced damage threshold measurements of high reflecting dielectric layers, 65961I (25 January 2007); doi: 10.1117/12.726549
Proc. SPIE 6596, Optical characterization of the LiInS2 and LiInSe2 crystals, 65961J (25 January 2007); doi: 10.1117/12.726551
Proc. SPIE 6596, Dielectric response to low and infra-low frequency in layered ferroelectrics, 65961K (25 January 2007); doi: 10.1117/12.726554
Proc. SPIE 6596, Optical properties of the undoped and SiOx doped DLC films, 65961L (25 January 2007); doi: 10.1117/12.726556
Proc. SPIE 6596, Dielectric properties of KDP crystal damaged by laser beam, 65961M (25 January 2007); doi: 10.1117/12.726561