PROCEEDINGS VOLUME 6607
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XIV | 17-19 APRIL 2007
Photomask and Next-Generation Lithography Mask Technology XIV
Proceedings Volume 6607 is from: Logo
PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XIV
17-19 April 2007
Yokohama, Japan
Front Matter
Proc. SPIE 6607, Front Matter: Volume 6607, 660701 (29 May 2007); doi: 10.1117/12.741654
Writing Tools and Technologies
Proc. SPIE 6607, Embedded optical proximity correction for the Sigma7500 DUV mask writer, 660704 (11 May 2007); doi: 10.1117/12.728918
Proc. SPIE 6607, Application of Sigma7500 pattern generator to X architecture and 45-nm generation mask making, 660705 (18 May 2007); doi: 10.1117/12.728919
Progressive Defects
Proc. SPIE 6607, A new model of haze generation and storage-life-time estimation for mask, 660706 (11 May 2007); doi: 10.1117/12.729258
Proc. SPIE 6607, Influence of environmental components on haze growth, 660707 (11 May 2007); doi: 10.1117/12.728920
Proc. SPIE 6607, Mask quality assurance in cleaning for haze elimination using flexible mask specifications, 660708 (11 May 2007); doi: 10.1117/12.728921
Proc. SPIE 6607, Substrate effects on the characteristics of haze defect formation on the photomask surface under exposure condition, 660709 (29 May 2007); doi: 10.1117/12.728922
Process and Material I
Proc. SPIE 6607, 1-nm of local CD accuracy for 45-nm-node photomask with low sensitivity CAR for e-beam writer, 66070A (11 May 2007); doi: 10.1117/12.728923
Proc. SPIE 6607, Improvement of CD variation control for attenuated phase-shift mask, 66070B (11 May 2007); doi: 10.1117/12.728924
Proc. SPIE 6607, Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control, 66070C (11 May 2007); doi: 10.1117/12.728925
Process and Material II
Proc. SPIE 6607, Qualification of design-optimized multizone hotplate for 45-nm node mask making, 66070D (11 May 2007); doi: 10.1117/12.728926
Proc. SPIE 6607, Improvement of etching selectivity for 32-nm node mask making, 66070E (11 May 2007); doi: 10.1117/12.728928
NGL I
Proc. SPIE 6607, Full field EUV lithography turning into a reality at IMEC, 66070H (11 May 2007); doi: 10.1117/12.729259
Proc. SPIE 6607, Commercial EUV mask-blank readiness for 32-nm HP manufacturing, 66070I (14 May 2007); doi: 10.1117/12.728931
Proc. SPIE 6607, Optimization of electrostatic chuck for mask-blank flatness control in extreme ultra-violet lithography, 66070J (11 May 2007); doi: 10.1117/12.728933
Proc. SPIE 6607, Multilayer bottom topography effect on actinic mask-blank inspection signal, 66070K (14 May 2007); doi: 10.1117/12.728934
Proc. SPIE 6607, EUV-mask pattern inspection using current DUV reticle inspection tool, 66070L (11 May 2007); doi: 10.1117/12.728935
EDA for Photomask
Proc. SPIE 6607, Novel method for quality assurance of two-dimensional pattern fidelity and its validation, 66070M (12 May 2007); doi: 10.1117/12.728936
Proc. SPIE 6607, Impact of mask pellicle effects to OPC quality, 66070N (12 May 2007); doi: 10.1117/12.728937
Proc. SPIE 6607, A specialized cell-wise OPC method for OPC-unfriendly spot detection, 66070O (12 May 2007); doi: 10.1117/12.728938
Proc. SPIE 6607, DFM methodology for automatic layout hot spot removal, 66070P (12 May 2007); doi: 10.1117/12.728939
NGL II
Proc. SPIE 6607, Progress on EUV mask fabrication for 32-nm technology node and beyond, 66070R (29 May 2007); doi: 10.1117/12.728941
Proc. SPIE 6607, Scatterometry based profile metrology of two-dimensional patterns of EUV masks, 66070S (12 May 2007); doi: 10.1117/12.728942
Proc. SPIE 6607, Step and flash imprint lithography template fabrication for emerging market applications, 66070T (12 May 2007); doi: 10.1117/12.728943
Proc. SPIE 6607, Three-dimensional template fabrication process for the dual damascene NIL approach, 66070U (14 May 2007); doi: 10.1117/12.728944
MDP
Proc. SPIE 6607, Shot-based MRC flow by using full chip MRC tool, 66070V (21 May 2007); doi: 10.1117/12.728945
Proc. SPIE 6607, Data exploder for variable shaped beam exposure, 66070W (11 May 2007); doi: 10.1117/12.728946
Proc. SPIE 6607, Layout and EB data reduction: comparison of OASIS based approach with format-specific reversible compressions, 66070X (12 May 2007); doi: 10.1117/12.728947
Metrology and Repair
Proc. SPIE 6607, Novel solution for in-die phase control under scanner equivalent optical settings for 45-nm node and below, 66070Z (12 May 2007); doi: 10.1117/12.728948
Proc. SPIE 6607, Polarized transmittance-reflectance scatterometry measurements of 2D trench dimensions on phase-shift masks, 660710 (14 May 2007); doi: 10.1117/12.728949
Proc. SPIE 6607, CD metrology by an immersion microscope with high NA condenser lens for 45-nm generation masks, 660711 (14 May 2007); doi: 10.1117/12.728950
Proc. SPIE 6607, Requirements of nano-machining repair system for 45-nm node, 660712 (14 May 2007); doi: 10.1117/12.728951
Inspection
Proc. SPIE 6607, Field results from a new die-to-database reticle inspection platform, 660714 (14 May 2007); doi: 10.1117/12.728953
Proc. SPIE 6607, High-performance reticle inspection tool for the 65-nm node and beyond, 660716 (29 May 2007); doi: 10.1117/12.728955
Proc. SPIE 6607, Cost-effective pattern inspection system using Xe-Hg lamp in challenge of sub-65-nm node, 660717 (14 May 2007); doi: 10.1117/12.728956
DFM
Proc. SPIE 6607, New method to estimate systematic yield caused by lithography manufacturability, 660719 (14 May 2007); doi: 10.1117/12.728957
Proc. SPIE 6607, DFM based on layout restriction and process window verification for sub-60-nm memory devices, 66071A (14 May 2007); doi: 10.1117/12.728958
Proc. SPIE 6607, Study of hot spot detection using neural networks judgment, 66071B (14 May 2007); doi: 10.1117/12.728959
Simulation
Proc. SPIE 6607, Improved methods for lithography model calibration, 66071D (16 May 2007); doi: 10.1117/12.728961
Proc. SPIE 6607, Evaluation of lithography simulation model accuracy for hotspot-based mask quality assurance, 66071E (14 May 2007); doi: 10.1117/12.728962
Proc. SPIE 6607, Mask topography effects of hole patterns on hyper-NA lithography, 66071F (14 May 2007); doi: 10.1117/12.728963
Lithography
Proc. SPIE 6607, ArF Immersion Lithography for 45-nm and beyond, 66071G (14 May 2007); doi: 10.1117/12.729263
Proc. SPIE 6607, LER transfer from a mask to wafers, 66071H (14 May 2007); doi: 10.1117/12.728964
Proc. SPIE 6607, Optical performance enhancement technique for 45-nm node with binary mask, 66071I (14 May 2007); doi: 10.1117/12.728965
Proc. SPIE 6607, Virtual lithography system to improve the productivity of high-mix low-volume production, 66071J (14 May 2007); doi: 10.1117/12.728966
OPC
Proc. SPIE 6607, The impact of scanner model vectorization on optical proximity correction, 66071L (15 May 2007); doi: 10.1117/12.728968
Proc. SPIE 6607, Stray-light implementation in optical proximity correction (OPC), 66071M (29 May 2007); doi: 10.1117/12.728969
Proc. SPIE 6607, Merged contact OPC using pattern type specific modeling and correction, 66071O (14 May 2007); doi: 10.1117/12.728971
Proc. SPIE 6607, Optimal photomask printability using interactive OPC with a new calibration methodology, 66071P (14 May 2007); doi: 10.1117/12.728972
Process and Material: Poster Session
Proc. SPIE 6607, Study of mask structure for 45-nm node based on manufacturability and lithographic performance, 66071U (14 May 2007); doi: 10.1117/12.728977
Proc. SPIE 6607, Pellicle factors affecting finished photomask flatness, 66071V (14 May 2007); doi: 10.1117/12.728978
Proc. SPIE 6607, The optimization of CD uniformity and measurement on mask and wafer, 66071W (15 May 2007); doi: 10.1117/12.728979
Proc. SPIE 6607, Verification of the modified model of drying process of a polymer liquid film on a flat substrate by experiment (3) - using organic solvent, 66071X (14 May 2007); doi: 10.1117/12.728980
Progressive Defects: Poster Session
Proc. SPIE 6607, Real-time trace ambient ammonia monitor for haze prevention, 66071Y (14 May 2007); doi: 10.1117/12.728981