PROCEEDINGS VOLUME 6636
19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 23-26 MAY 2006
19th International Conference on Photoelectronics and Night Vision Devices
19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES
23-26 May 2006
Moscow, Russian Federation
Front Matter: Volume 6636
Proc. SPIE 6636, Front Matter: Volume 6636, 663601 (2 May 2007); doi: 10.1117/12.746720
Focal Plane Arrays
Proc. SPIE 6636, Photodetector units for second generation thermal imaging systems in Orion, 663602 (26 April 2007); doi: 10.1117/12.742280
Proc. SPIE 6636, HgCdTe large staring arrays at SOFRADIR, 663603 (26 April 2007); doi: 10.1117/12.742283
Proc. SPIE 6636, InSb 288*32 FPA with digital TDI for low background application, 663604 (26 April 2007); doi: 10.1117/12.742288
Proc. SPIE 6636, Wide-sized photo receiving matrix devices of IR spectrum range, 663605 (26 April 2007); doi: 10.1117/12.742291
Proc. SPIE 6636, MCT epitaxial layers characterization from IR transmittance spectra, 663606 (26 April 2007); doi: 10.1117/12.742296
Proc. SPIE 6636, The focal plane array based on MIS-photodiodes on InAs for pulse optical data registration, 663607 (26 April 2007); doi: 10.1117/12.742302
Proc. SPIE 6636, All-round surveillance infrared snapshot FPA system with digital image-rotation compensation, 663608 (26 April 2007); doi: 10.1117/12.742305
General Aspects of Photo- and Optoelectronics
Proc. SPIE 6636, Physical and material science aspects of integrated optoelectronics, 663609 (26 April 2007); doi: 10.1117/12.742309
Proc. SPIE 6636, Organic electroluminescent structures for new generation of display systems, 66360A (26 April 2007); doi: 10.1117/12.742310
Proc. SPIE 6636, Organic materials and structures for photoelectronics, 66360B (26 April 2007); doi: 10.1117/12.742311
Photodetectors and Photodevices
Proc. SPIE 6636, Radiation-proof photodetectors for spectral region 0.35÷1.1 µm, 66360C (26 April 2007); doi: 10.1117/12.742320
Proc. SPIE 6636, High-speed photodiodes for 2.0-4.0 µm spectral range, 66360D (26 April 2007); doi: 10.1117/12.742322
Proc. SPIE 6636, Photodiodes based on Pb1-xSnxSe epitaxial films, 66360E (26 April 2007); doi: 10.1117/12.742325
Proc. SPIE 6636, Photodetector with thermoelectric cooler, 66360F (26 April 2007); doi: 10.1117/12.742328
Proc. SPIE 6636, Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements, 66360G (26 April 2007); doi: 10.1117/12.742329
Proc. SPIE 6636, Uncooled PEM detector of the CO2-laser radiation, 66360H (26 April 2007); doi: 10.1117/12.742332
Night Vision Systems
Proc. SPIE 6636, Computer modeling of image intensifiers and photoelectron guns for time-resolved electron diffraction experiments, 66360I (26 April 2007); doi: 10.1117/12.742336
Proc. SPIE 6636, Transparency of electromagnetic radiation receivers, 66360J (2 May 2007); doi: 10.1117/12.742338
Proc. SPIE 6636, Electron-beam processing effect on photoemitting-structures parameters and the noise factor of microchannel plates, 66360K (27 April 2007); doi: 10.1117/12.742340
Proc. SPIE 6636, Infrared photoconductivity of InGaAs/GaAs heterostructures with quantum dots, 66360L (2 May 2007); doi: 10.1117/12.742377
Proc. SPIE 6636, Abilities of Russian digital CCD cameras of serial manufacture for astronomical applications, 66360M (26 April 2007); doi: 10.1117/12.742381
Proc. SPIE 6636, TV system All Sky for real-time remote monitoring of night cloud condition, 66360N (26 April 2007); doi: 10.1117/12.742382
Proc. SPIE 6636, Spectral filtration of the IR images (review), 66360O (26 April 2007); doi: 10.1117/12.742518
Proc. SPIE 6636, Spectral filtration of images in the IR spectral region with use of phenomenon of total internal reflection, 66360P (26 April 2007); doi: 10.1117/12.742519
Proc. SPIE 6636, Multispectral thermal imager, 66360Q (26 April 2007); doi: 10.1117/12.742522
Photoelectric Phenomena in Photodetectors and Photosensitive Structures
Proc. SPIE 6636, On the degree to which the increase in the concentration of the recombination centers raises the efficiency of inter-band photo-excitation of Dember's electromotive force under low-intensity optical radiation, 66360R (26 April 2007); doi: 10.1117/12.742523
Proc. SPIE 6636, Plasmon-phonon interaction in α-Ag2Se thin films, 66360S (2 May 2007); doi: 10.1117/12.742526
Proc. SPIE 6636, Calculation of photosensitivity of porous silicon for optoelectronic devices, 66360T (26 April 2007); doi: 10.1117/12.742527
Proc. SPIE 6636, Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates, 66360U (26 April 2007); doi: 10.1117/12.742528
Proc. SPIE 6636, Current oscillations in Ag3In5Se9 stimulated by electric field and IR-irradiation, 66360V (26 April 2007); doi: 10.1117/12.742551
Proc. SPIE 6636, About mechanisms of anomalous photovoltage effect in CdTe films, 66360W (26 April 2007); doi: 10.1117/12.742553
Proc. SPIE 6636, Structure and photoelectric properties of Pb1-xMnxSe epitaxial films, 66360X (26 April 2007); doi: 10.1117/12.742554
Proc. SPIE 6636, Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum, 66360Y (26 April 2007); doi: 10.1117/12.742555
Proc. SPIE 6636, Functionalities of the CdSe1-xTex films in IR region of spectrum, 66360Z (26 April 2007); doi: 10.1117/12.742597
Proc. SPIE 6636, Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe, 663610 (26 April 2007); doi: 10.1117/12.742599
Problems in the Technology of Photoelectronic Materials and Structures
Proc. SPIE 6636, HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties, 663611 (26 April 2007); doi: 10.1117/12.742600
Proc. SPIE 6636, Relaxation of electrical properties of epitaxial CdxHg1-xTe:As(Sb) layers converted into n-type by ion milling, 663612 (26 April 2007); doi: 10.1117/12.742604
Proc. SPIE 6636, Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction, 663613 (26 April 2007); doi: 10.1117/12.742615
Proc. SPIE 6636, Production of ZnSxSe1-x zinc sulfoselenides by CVD method, 663614 (26 April 2007); doi: 10.1117/12.742616
Proc. SPIE 6636, The p-n junctions on the basis of CdxHg1-xTe obtained by low-energy treatment with indium and argon ions, 663615 (26 April 2007); doi: 10.1117/12.742617
Proc. SPIE 6636, Thermal annealing impact on the properties of CdxHg1-xTe epitaxial layers with anodic oxidation, 663616 (26 April 2007); doi: 10.1117/12.742619
Methods and Equipment for Measurements of Photodetector Characteristics
Proc. SPIE 6636, Analysis of voltage-capacitance curve of MIS-structure based on n- and p- MBE HgCdTe, 663617 (26 April 2007); doi: 10.1117/12.742637
Proc. SPIE 6636, Laser-and-holographic complex for technological and certification control of optical elements and objectives in infrared spectral region of 3-12 um, 663618 (26 April 2007); doi: 10.1117/12.742638
Proc. SPIE 6636, Application of pulsed UV laser for dicing of arrays and linear of photodiodes based on MCT solid solution, 663619 (26 April 2007); doi: 10.1117/12.742639
Proc. SPIE 6636, Detection of short light pulses by long inertance PbS and PbSe photodetectors, 66361A (26 April 2007); doi: 10.1117/12.742641
Proc. SPIE 6636, Determination of capture levels parameters responsible for photoelectret state in cadmium telluride films, 66361B (26 April 2007); doi: 10.1117/12.742644
Proc. SPIE 6636, Imaging spectrometer with application of a multi-beam interference, 66361C (26 April 2007); doi: 10.1117/12.742645
Proc. SPIE 6636, Ultimate sensitivity of receiving devices keeping CO2-quantum amplifier and staring thermal imager, 66361D (26 April 2007); doi: 10.1117/12.742646
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