Front Matter
Proc. SPIE 6730, Front Matter: Volume 6730, 673001 (26 November 2007); doi: 10.1117/12.781966
Invited Session
Proc. SPIE 6730, Mask Industry Assessment: 2007, 673003 (23 October 2007); doi: 10.1117/12.730158
Proc. SPIE 6730, Compensating for image placement errors induced during the fabrication and chucking of EUVL masks, 673004 (24 October 2007); doi: 10.1117/12.752601
Proc. SPIE 6730, PMJ 2007 panel discussion overview: double exposure and double patterning for 32-nm half-pitch design node, 673006 (30 October 2007); doi: 10.1117/12.752596
Etch
Proc. SPIE 6730, Characterizing photomask etch processes by phase component analysis (PCA), 673007 (30 October 2007); doi: 10.1117/12.746421
Proc. SPIE 6730, The advanced mask CD MTT control using dry etch process for sub 65 nm tech, 673008 (30 October 2007); doi: 10.1117/12.746646
Proc. SPIE 6730, CD bias control with in-situ plasma treatment in EPSM photomask etch, 67300A (30 October 2007); doi: 10.1117/12.746772
Substrate
Proc. SPIE 6730, Effects of exposure environment on pellicle degradation in ArF lithography, 67300B (30 October 2007); doi: 10.1117/12.746857
Proc. SPIE 6730, Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase-shift mask manufacturing, 67300C (30 October 2007); doi: 10.1117/12.748664
Proc. SPIE 6730, Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems, 67300D (30 October 2007); doi: 10.1117/12.746614
Imprint
Proc. SPIE 6730, The development of full field high resolution imprint templates, 67300E (30 October 2007); doi: 10.1117/12.747568
Proc. SPIE 6730, Defect reduction progress in step and flash imprint lithography, 67300F (16 November 2007); doi: 10.1117/12.747565
Proc. SPIE 6730, Fabrication of nano-imprint templates for dual-Damascene applications using a high resolution variable shape E-beam writer, 67300G (30 October 2007); doi: 10.1117/12.742498
Resist
Proc. SPIE 6730, The study of CD error in mid-local pattern area caused by develop loading effect, 67300H (30 October 2007); doi: 10.1117/12.746565
Proc. SPIE 6730, Performance improvement of ALTA4700 for 130nm and below mask productivity, 67300I (30 October 2007); doi: 10.1117/12.746654
Proc. SPIE 6730, The behavior of substrate dependency as surface treatment in the positive chemically amplified resist, 67300J (30 October 2007); doi: 10.1117/12.746652
Proc. SPIE 6730, Design for CD correction strategy using a resist shrink method via UV irradiation for defect-free photomask, 67300K (30 October 2007); doi: 10.1117/12.746787
Proc. SPIE 6730, The impact of mask photoresist develop on critical dimension parameters, 67300L (30 October 2007); doi: 10.1117/12.747605
DFM 1: Masks and Manufacturability
Proc. SPIE 6730, New method of contour-based mask-shape compiler, 67300M (30 October 2007); doi: 10.1117/12.746559
Proc. SPIE 6730, Development of mask-DFM system "MiLE" load estimation of mask manufacturing, 67300N (30 October 2007); doi: 10.1117/12.746577
Proc. SPIE 6730, DFM for maskmaking: design-aware flexible mask-defect analysis, 67300O (30 October 2007); doi: 10.1117/12.746735
Proc. SPIE 6730, Use of layout automation and design-based metrology for defect test mask design and verification, 67300P (16 November 2007); doi: 10.1117/12.746953
DFM 2: Manufacturing Models and Physical Design
Proc. SPIE 6730, Intel's AMT enables rapid processing and info-turn for Intel's DFM test chip vehicle, 67300Q (30 October 2007); doi: 10.1117/12.746844
Proc. SPIE 6730, From rule to model-based design: A need for DfP criteria?, 67300R (30 October 2007); doi: 10.1117/12.746818
Proc. SPIE 6730, Accurate lithography analysis for yield prediction, 67300S (30 October 2007); doi: 10.1117/12.746797
Proc. SPIE 6730, Production-worthy full chip image-based verification, 67300T (30 October 2007); doi: 10.1117/12.747022
Proc. SPIE 6730, Layout verification in the era of process uncertainty: requirements for speed, accuracy, and process portability, 67300U (30 October 2007); doi: 10.1117/12.746700
DFM 3: Modal Aware Design and Optimization
EUV and OGL
Proc. SPIE 6730, Investigation of mask defectivity in full field EUV lithography, 673012 (30 October 2007); doi: 10.1117/12.746566
Proc. SPIE 6730, Detectability and printability of EUVL mask blank defects for the 32-nm HP node, 673013 (16 November 2007); doi: 10.1117/12.746698
Proc. SPIE 6730, Measuring and characterizing the nonflatness of EUVL reticles and electrostatic chucks, 673014 (30 October 2007); doi: 10.1117/12.746842
Proc. SPIE 6730, Recent performance of EUV mask blanks with low-thermal expansion glass substrates, 673015 (30 October 2007); doi: 10.1117/12.748369
Proc. SPIE 6730, Investigation of resist effects on EUV mask defect printability, 673016 (30 October 2007); doi: 10.1117/12.746707
Proc. SPIE 6730, Impact of mask absorber properties on printability in EUV lithography, 673017 (16 November 2007); doi: 10.1117/12.746550
Cleaning I
Proc. SPIE 6730, Capability of eco-friendly cleaning strategy corresponding to advanced technology, 673018 (30 October 2007); doi: 10.1117/12.746782
Proc. SPIE 6730, Compositional analysis of progressive defects on a photomask, 673019 (30 October 2007); doi: 10.1117/12.746375
Proc. SPIE 6730, A practical solution to the critical problem of 193 nm reticle haze, 67301A (30 October 2007); doi: 10.1117/12.747511
Proc. SPIE 6730, Rapid and precise monitor of reticle haze, 67301B (30 October 2007); doi: 10.1117/12.746416
Cleaning II
Proc. SPIE 6730, Investigation of airborne molecular contamination adsorption rate as storage materials in mask, 67301D (30 October 2007); doi: 10.1117/12.746675
Proc. SPIE 6730, Study of time dependent 193 nm reticle haze, 67301E (30 October 2007); doi: 10.1117/12.747145
Proc. SPIE 6730, Full sulfate-free process: joint achievement of minimal residual ions and yield improvement, 67301F (30 October 2007); doi: 10.1117/12.746653
Extreme NA
Proc. SPIE 6730, Using the AIMS 45-193i for hyper-NA imaging applications, 67301G (30 October 2007); doi: 10.1117/12.746688
Proc. SPIE 6730, Mask characterization for double patterning lithography, 67301H (30 October 2007); doi: 10.1117/12.747006
Proc. SPIE 6730, DPL performance analysis strategy with conventional workflow, 67301I (30 October 2007); doi: 10.1117/12.747380
Proc. SPIE 6730, Estimating DPL photomask fabrication load compared with single exposure, 67301J (30 October 2007); doi: 10.1117/12.746982
Proc. SPIE 6730, Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning, 67301L (16 November 2007); doi: 10.1117/12.746689
Proc. SPIE 6730, The MEEF NILS divergence for low k1 lithography, 67301M (30 October 2007); doi: 10.1117/12.742273
Proc. SPIE 6730, Impact of alternative mask stacks on the imaging performance at NA 1.20 and above, 67301N (30 October 2007); doi: 10.1117/12.746678
Proc. SPIE 6730, Requirements of photomask registration for the 45nm node and beyond: Is it possible?, 67301O (30 October 2007); doi: 10.1117/12.746571
Simulation
Proc. SPIE 6730, Simulation of larger mask areas using the waveguide method with fast decomposition technique, 67301P (30 October 2007); doi: 10.1117/12.746631
Proc. SPIE 6730, Polarization aberration modeling via Jones matrix in the context of OPC, 67301Q (16 November 2007); doi: 10.1117/12.746710