PROCEEDINGS VOLUME 6792
24TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 21-24 JANUARY 2008
24th European Mask and Lithography Conference
IN THIS VOLUME

0 Sessions, 43 Papers, 0 Presentations
Front Matter  (1)
Simulation  (2)
Resist  (1)
Metrology  (6)
RET  (3)
EUV I  (2)
NIL  (2)
EUL II  (2)
24TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE
21-24 January 2008
Dresden, Germany
Front Matter
Proc. SPIE 6792, Front Matter: Volume 6792, 679201 (2 May 2008); doi: 10.1117/12.801396
Plenary Session I
Proc. SPIE 6792, Mask industry assessment trend analysis, 679202 (2 May 2008); doi: 10.1117/12.798511
Double Patterning
Proc. SPIE 6792, Double exposure technology for KrF lithography, 679203 (2 May 2008); doi: 10.1117/12.798512
Proc. SPIE 6792, Wafer based mask characterization for double patterning lithography, 679204 (2 May 2008); doi: 10.1117/12.798515
Proc. SPIE 6792, Topological and model based approach to pitch decomposition for double patterning, 679205 (2 May 2008); doi: 10.1117/12.798518
Simulation
Proc. SPIE 6792, Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique, 679206 (2 May 2008); doi: 10.1117/12.798519
Proc. SPIE 6792, Three dimensional mask effects in OPC process model development from first principles simulation, 679207 (2 May 2008); doi: 10.1117/12.798520
Mask Business and Mask Data Prep
Proc. SPIE 6792, Key improvement schemes of accuracies in EB mask writing for double patterning lithography, 679208 (2 May 2008); doi: 10.1117/12.798521
Proc. SPIE 6792, Mask data rank (MDR) and its application, 679209 (2 May 2008); doi: 10.1117/12.798583
Proc. SPIE 6792, MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence, 67920A (2 May 2008); doi: 10.1117/12.798584
Proc. SPIE 6792, Printing of sub-resolution shots in electron beam direct write with variable shaped beam machines, 67920B (2 May 2008); doi: 10.1117/12.798585
Mask Cleaning / Haze
Proc. SPIE 6792, Assessment of molecular contamination in mask pod, 67920C (2 May 2008); doi: 10.1117/12.798586
Proc. SPIE 6792, Photomask cleaning process improvement to minimize ArF haze, 67920D (2 May 2008); doi: 10.1117/12.798592
Proc. SPIE 6792, Theoretical study of mask haze formation, 67920E (2 May 2008); doi: 10.1117/12.798593
Inspection and Repair
Proc. SPIE 6792, EUV blank inspection, 67920F (2 May 2008); doi: 10.1117/12.798594
Proc. SPIE 6792, Introduction of new database reflected tritone algorithm for application in mask production, 67920G (2 May 2008); doi: 10.1117/12.798595
Proc. SPIE 6792, Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond, 67920H (2 May 2008); doi: 10.1117/12.798599
Proc. SPIE 6792, Inspection results of advanced (sub-50nm design rule) reticles using the TeraScanHR, 67920I (2 May 2008); doi: 10.1117/12.798601
Resist
Proc. SPIE 6792, Alternative approach to transparent stamps for UV-based nanoimprint lithography: techniques and materials, 67920J (2 May 2008); doi: 10.1117/12.798602
Metrology
Proc. SPIE 6792, Characterizing the imaging performance of flash memory masks using AIMS, 67920K (2 May 2008); doi: 10.1117/12.798603
Proc. SPIE 6792, CDO budgeting, 67920L (2 May 2008); doi: 10.1117/12.798777
Proc. SPIE 6792, High-resolution and high-precision pattern placement metrology for the 45 nm node and beyond, 67920M (2 May 2008); doi: 10.1117/12.798779
Proc. SPIE 6792, Mask CD measurement approach by diffraction intensity for lithography equivalent, 67920N (2 May 2008); doi: 10.1117/12.798781
Proc. SPIE 6792, Influences on accuracy of SEM based CD mask metrology with a view to the 32 nm node, 67920O (2 May 2008); doi: 10.1117/12.798783
Proc. SPIE 6792, Comparative scatterometric CD and edge profile measurements on a MoSi mask using different scatterometers, 67920P (2 May 2008); doi: 10.1117/12.798784
RET
Proc. SPIE 6792, Assessment and application of focus drilling for DRAM contact hole fabrication, 67920Q (2 May 2008); doi: 10.1117/12.798807
Proc. SPIE 6792, Design of pattern-specific mask grating for giving the effect of an off-axis illumination, 67920R (2 May 2008); doi: 10.1117/12.798809
Proc. SPIE 6792, Overcoming mask etch challenges for 45 nm and beyond, 67920S (2 May 2008); doi: 10.1117/12.798810
EUV I
Proc. SPIE 6792, Desired IP control methodology for EUV mask in current mask process, 67920T (2 May 2008); doi: 10.1117/12.798933
Proc. SPIE 6792, Use of EUV scatterometry for the characterization of line profiles and line roughness on photomasks, 67920U (2 May 2008); doi: 10.1117/12.798934
NIL
Proc. SPIE 6792, Strategies for hybrid techniques of UV lithography and thermal nanoimprint, 67920V (2 May 2008); doi: 10.1117/12.798935
EUL II
Proc. SPIE 6792, Status of EUVL reticle chucking, 67920X (2 May 2008); doi: 10.1117/12.798937
Proc. SPIE 6792, 45nm node registration metrology on LTEM EUV reticles, 67920Y (2 May 2008); doi: 10.1117/12.798939
Poster Session
Proc. SPIE 6792, Top surface imaging study by selective chemisorptions of poly(dimethyl siloxane) on diazoketo-functionalized polymeric surface, 67920Z (2 May 2008); doi: 10.1117/12.798785
Proc. SPIE 6792, Optical proximity correction for 0.13 um SiGe:C BiCMOS, 679210 (2 May 2008); doi: 10.1117/12.798786
Proc. SPIE 6792, New alignment marks for improved measurement maturity, 679211 (2 May 2008); doi: 10.1117/12.798788
Proc. SPIE 6792, Measuring contact hole corner rounding uniformity using optical scatterometry, 679212 (2 May 2008); doi: 10.1117/12.798790
Proc. SPIE 6792, Very high sensitivity mask DUV transmittance mapping and measurements based on non-imaging optics, 679213 (2 May 2008); doi: 10.1117/12.798801
Proc. SPIE 6792, Advances in fabrication of x-ray masks based on vitreous carbon using a new UV sensitive positive resist, 679214 (2 May 2008); doi: 10.1117/12.798802
Proc. SPIE 6792, New results from DUV water immersion microscopy using the CD metrology system LWM500 WI with a high NA condenser, 679215 (2 May 2008); doi: 10.1117/12.798803
Proc. SPIE 6792, High resolution patterning and simulation on Mo/Si multilayer for EUV masks, 679216 (2 May 2008); doi: 10.1117/12.798804
Proc. SPIE 6792, Phame: high resolution off-axis phase shift measurements on 45nm node features, 679217 (2 May 2008); doi: 10.1117/12.798805
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